AOB403 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOB403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the D2-PAK package, this device is well suited for high current load applications. Standard product AOB403 is Pb-free (meets ROHS & Sony 259 specifications). AOB403L is a Green Product ordering option. AOB403 and AOB403L are electrically identical. VDS (V) = -60V ID = -30A (VGS=-10V) RDS(ON) < 44mΩ (VGS = -10V ) @ 30A RDS(ON) < 55mΩ (VGS = -4.5V ) @ 20A TO-263 D2-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current C C Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C V A -20 IAR -26 A EAR 134 mJ -60 83 2.2 W 1.45 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State W 42 PDSM Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±20 ID IDM PD TA=25°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case C Units V -30 TC=100°C Pulsed Drain Current Avalanche Current Maximum -60 RθJA RθJC Typ 10 45 1.35 °C Max 12 55 1.8 Units °C/W °C/W °C/W AOB403 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -60 VDS=-48V, VGS=0V IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1 ID(ON) On state drain current VGS=-10V, VDS=-5V -60 RDS(ON) Static Drain-Source On-Resistance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Gate Source Charge -1.9 nA -3 V A 43 55 VDS=-5V, ID=-30A 50 -0.73 2977 VGS=0V, VDS=-30V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-30V, ID=-30A µA ±100 VGS=-4.5V, I D=-20A DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance -5 44 Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Units V 62 Forward Transconductance Output Capacitance -1 36 VSD Crss -0.003 51 TJ=125°C gFS Coss Max TJ=55°C VGS=-10V, ID=-30A IS Typ mΩ mΩ S -1 V -30 A 3600 pF 241 pF 153 pF 2 2.4 Ω 44.6 54 nC 20.8 25 nC 9.9 nC Qgd Gate Drain Charge 10 nC tD(on) Turn-On DelayTime 13.7 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=-10V, VDS=-30V, RL=1Ω, RGEN=3Ω 8.3 ns 37 ns 9.7 ns trr Body Diode Reverse Recovery Time IF=-30A, dI/dt=100A/µs 40 Qrr Body Diode Reverse Recovery Charge IF=-30A, dI/dt=100A/µs 56 48 ns nC A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev1:May2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOB403 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -4.5V -10V 25 VDS=-5V 25 -6V -5V 20 -ID(A) 20 -ID (A) 30 -4V 15 -3.5V 15 125°C 10 10 5 5 25°C VGS=-3V 0 0 0 1 2 3 4 0 5 1 60 4 5 2 50 VGS=-4.5V Normalized On-Resistance RDS(ON) (mΩ) 3 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 40 30 VGS=-10V 20 10 0 0 5 VGS=-10V ID=-30A 1.8 1.6 VGS=-4.5V ID=-20A 1.4 1.2 1 0.8 15 20 25 30 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 10 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 80 ID=-30A 1.0E+00 125°C 1.0E-01 60 -IS (A) RDS(ON) (mΩ) 2 40 125°C 1.0E-02 1.0E-03 25°C 1.0E-04 25°C 1.0E-05 1.0E-06 20 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AOB403 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4000 10 Ciss 3200 Capacitance (pF) 8 -VGS (Volts) 3600 VDS=-30V ID=-30A A 6 4 2800 2400 2000 1600 1200 Coss 800 2 Crss 400 0 0 0 5 10 15 20 25 30 35 40 -Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 0 45 1.0 Power (W) -ID (Amps) 1ms 10ms DC TJ(Max)=175°C, TA=25°C 1 10 100 -VDS (Volts) ZθJC Normalized Transient Thermal Resistance TJ(Max)=175°C TA=25°C 600 400 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=1.8°C/W 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 30 200 0.1 0.1 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 800 100µs 10.0 10 1000 10µs RDS(ON) limited 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 T 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOB403 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS tA = 25 100 L⋅ ID 90 BV − VDD Power Dissipation (W) -ID(A), Peak Avalanche Current 30 20 15 TA=25°C 80 70 60 50 40 30 20 10 0 10 0.00001 0.0001 0 0.001 25 100 125 150 175 100 40 90 35 TA=25°C 80 30 70 25 Power (W) Current rating -ID(A) 75 TCASE (°C) Figure 13: Power De-rating (Note B) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 20 15 60 50 40 30 10 20 5 10 0 0 25 50 75 100 125 150 0 0.001 175 TCASE (°C) Figure 14: Current De-rating (Note B) 10 ZθJA Normalized Transient Thermal Resistance 50 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=55°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 0.001 0.00001 Single Pulse 0.0001 0.001 Ton 0.01 0.1 1 T 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. 100 1000