AOT460 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOT460 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in UPS, high current switching applications. Standard Product AOT460 is Pb-free (meets ROHS & Sony 259 specifications). VDS (V) = 60V ID = 85 A (VGS = 10V) RDS(ON) < 7.5mΩ (VGS = 10V) UIS TESTED! TO-220 D Top View Drain Connected to Tab G D G S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum VDS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 Continuous Drain TC=25°C 85 CurrentG TC=100°C 85 ID Units V V A Pulsed Drain Current C IDM 250 Avalanche Current C IAR 80 A EAR 320 268 134 -55 to 175 mJ Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation TC=100°C Junction and Storage Temperature Range B Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case B A PD TJ, TSTG Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. Symbol RθJA RθJC Typ 45 0.45 W °C Max 60 0.56 Units °C/W °C/W www.aosmd.com AOT460 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250uA, VGS=0V VDS=60V, VGS=0V IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current RDS(ON) Static Drain-Source On-Resistance gFS VSD IS VDS=5V, ID=30A Transconductance Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge Min Conditions Typ Max 2.95 10 50 100 4 60 V TJ=55°C VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=30A 2 250 TJ=125°C VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=30V, ID=30A VGS=10V, VDS=30V, RL=1Ω, RGEN=3Ω IF=30A, dI/dt=100A/µs IF=30A, dI/dt=100A/µs Units µA nA V A 6.3 10.5 90 0.7 7.5 13 3800 430 190 1.5 4560 68 33 15 19 18 35 44 23 88 nC nC nC nC ns ns ns ns 53 98 64 ns nC 1 85 2.3 mΩ S V A pF pF pF Ω A: The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. G. The maximum current rating is limited by bond-wires. Rev0: Nov. 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT460 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 250 100 VDS=5V 10V 8V 80 150 60 5V ID(A) ID (A) 200 100 40 125°C 25°C 4.5V 50 20 VGS=4V -40°C 0 0 0 1 2 3 4 5 2 VDS (Volts) Figure 1: On-Region Characteristics 3 3.5 4 4.5 5 5.5 VGS(Volts) Figure 2: Transfer Characteristics 2.2 Normalized On-Resistance 7.2 7 RDS(ON) (mΩ) 2.5 6.8 VGS=10V 6.6 6.4 6.2 6 2 1.8 1.6 VGS=10V, 30A 1.4 1.2 1 0.8 0.6 0 20 40 60 80 -50 100 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 25 100 ID=30A 10 1 15 IS (A) RDS(ON) (mΩ) 20 125° 125°C 0.1 10 25°C 0.01 5 25°C 0.001 -40°C -40°C 0 0.0001 4 8 12 16 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOT460 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6 10 VDS=30V ID=30A Ciss Capacitance (nF) VGS (Volts) 8 6 4 4 2 Crss 2 0 Coss 0 0 20 40 60 80 0 Qg (nC) Figure 7: Gate-Charge Characteristics 15 30 45 60 VDS (Volts) Figure 8: Capacitance Characteristics 10000 1000 RDS(ON) limited ID (A) 500µs 1ms 10 Power (W) 10µs 100 1000 5ms DC TJ(Max)=175°C TC=25°C 1 1 10 100 VDS (V) Figure 9: Maximun Forward Biased Safe Operating Area (Note F) 100 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.45°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 0.01 0.00001 PD Ton Single Pulse 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOT460 300 100 250 80 Current rating ID(A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 150 100 60 40 20 50 0 0 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 TCASE (°C) Figure 12: Current De-rating (Note B) TCASE (°C) Figure 13: Power De-rating (Note B) 150 ID(A), Peak Avalanche Current TA=25°C 125 100 75 TA=150°C 50 25 0 0.000001 0.00001 0.0001 0.001 Time in avalanche, t A (s) Figure 10: Single Pulse Avalanche capability Alpha & Omega Semiconductor, Ltd. www.aosmd.com