AOU438 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOU438 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOU438 is Pb-free (meets ROHS & Sony 259 specifications). AOU438L is a Green Product ordering option. AOU438 and AOU438L are electrically identical . VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 4.5mΩ (VGS = 10V) RDS(ON) < 6.5mΩ (VGS = 4.5V) TO-251 D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G TC=25°C G Pulsed Drain Current Avalanche Current C C TC=25°C Power Dissipation B Junction and Storage Temperature Range V 200 30 A EAR 112 mJ 100 Steady-State W 50 TJ, TSTG Steady-State Alpha & Omega Semiconductor, Ltd. A 63 IAR Thermal Characteristics Parameter A ±20 ID IDM PD TC=100°C Maximum Junction-to-Ambient C Maximum Junction-to-Case Units V 85 TC=100°C B Repetitive avalanche energy L=0.1mH Maximum 30 -55 to 175 Symbol RθJA RθJC °C Typ Max Units 0.8 100 1.5 °C/W °C/W AOU438 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V TJ=55°C 5 VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 On state drain current VGS=10V, VDS=5V 85 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge A VGS=4.5V, ID=20A 5.4 6.5 VDS=5V, ID=20A 106 DYNAMIC PARAMETERS Ciss Input Capacitance Rg V 6.5 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Reverse Transfer Capacitance 3 4.5 Forward Transconductance Output Capacitance nA 5.4 VSD Crss 1.8 0.72 3200 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=15V, ID=20A µA 100 3.5 TJ=125°C gFS Units V 1 ID(ON) Coss Max 30 VDS=24V, VGS=0V IDSS IS Typ mΩ mΩ S 1 V 85 A 3840 pF 590 pF 414 pF 0.54 0.7 Ω 63 76 nC 33 40 nC 8.6 nC Qgd Gate Drain Charge 17.6 nC tD(on) Turn-On DelayTime 12 ns 15.5 ns 40 ns 14 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 34 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 30 41 ns nC A: The value of R θJA is measured with the device in a still air environment with TA =25°C. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. Rev1: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOU438 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 10V 50 50 VDS=5V 4.0V 40 ID(A) ID (A) 40 30 3.5V 125°C 30 25°C 20 20 10 10 VGS=3V 0 0 0 1 2 3 4 1.5 5 2 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 8 1.6 Normalized On-Resistance 7 RDS(ON) (mΩ) 2.5 VGS=4.5V 6 5 4 VGS=10V 3 ID=20A 1.4 VGS=10V VGS=4.5V 1.2 1 2 0 10 20 30 40 50 60 0.8 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 8 100 125 150 175 1.0E+02 1.0E+01 6 125°C 4 125°C 1.0E+00 IS (A) RDS(ON) (mΩ) 75 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID=20A 25°C 1.0E-01 25°C 1.0E-02 1.0E-03 2 1.0E-04 1.0E-05 0 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AOU438 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5000 10 VDS=15V ID=20A 4000 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 3000 2000 Coss 2 1000 0 0 Crss 0 10 20 30 40 50 60 70 0 Qg (nC) Figure 7: Gate-Charge Characteristics 15 20 25 30 1000 RDS(ON) limited 100 TJ(Max)=150°C TA=25°C 800 10µs 1ms 100µs 10 Power (W) ID (Amps) 10 VDS (Volts) Figure 8: Capacitance Characteristics 1000 10ms DC TJ(Max)=150°C TA=25°C 1 0.1 600 400 200 0.1 1 10 100 VDS (Volts) 10 0 1E-05 1E-04 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, single pulse D=T on/T TJ,PK=T A+PDM.ZθJC.RθJC RθJC=1.5°C/W 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 T 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOU438 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 TA=25°C 100 Power Dissipation (W) ID(A), Peak Avalanche Current 120 80 60 tA = 40 L ⋅ ID BV − VDD 20 80 60 40 20 0 0.00001 0 0.0001 0.001 0.01 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 80 60 40 20 0 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. 0 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note B) 100 Current rating ID(A) 100 175 175