AP6982M
Advanced Power
Electronics Corp.
▼ Low On-resistance
▼ Single Drive Requirement
▼ Surface Mount Package
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
CH-1
D2
D2
D2
D1 D2
D1 D1
D1
G2
G2
SO-8
SO-8
S2
G1 S2
S1 G1
S1
CH-2
BVDSS
30V
RDS(ON)
18mΩ
ID
8.8A
BVDSS
30V
RDS(ON)
25mΩ
ID
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
7.5A
D2
D1
G2
G1
S2
S1
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Units
P-channel
30
30
V
±25
±25
V
Continuous Drain Current
3
8.8
7.5
A
Continuous Drain Current
3
7
6
A
30
30
A
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
2.0
Linear Derating Factor
0.016
W
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
62.5
℃/W
200526041
AP6982M
CH-1 Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
30
-
-
V
-
0.02
-
V/℃
VGS=10V, ID=8A
-
-
18
mΩ
VGS=4.5V, ID=6A
-
-
30
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=8A
-
13
-
S
Drain-Source Leakage Current (Tj=25 C)
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70oC)
VDS=24V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±25V
-
-
±100
nA
ID=8A
-
17
27
nC
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
o
IGSS
2
VGS=0V, ID=250uA
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
10
-
nC
2
td(on)
Turn-on Delay Time
VDS=15V
-
11
-
ns
tr
Rise Time
ID=1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
33
-
ns
tf
Fall Time
RD=15Ω
-
25
-
ns
Ciss
Input Capacitance
VGS=0V
-
1400 2240
pF
Coss
Output Capacitance
VDS=25V
-
320
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
220
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.57
-
Ω
Min.
Typ.
IS=1.7A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=8A, VGS=0V
-
27
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
22
-
nC
AP6982M
CH-2 Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
30
-
-
V
-
0.005
-
V/℃
VGS=10V, ID=7A
-
-
25
mΩ
VGS=4.5V, ID=4A
-
-
36
mΩ
VDS=VGS, ID=250uA
1
-
3
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
2
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
IGSS
VGS=0V, ID=250uA
Max. Units
VDS=10V, ID=7A
-
9
-
S
o
VDS=30V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=24V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±25V
-
-
±100
nA
Drain-Source Leakage Current (Tj=25 C)
2
Qg
Total Gate Charge
ID=7A
-
11
18
nC
Qgs
Gate-Source Charge
VDS=24V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
7
-
nC
VDS=15V
-
9
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
24
-
ns
tf
Fall Time
RD=15Ω
-
15
-
ns
Ciss
Input Capacitance
VGS=0V
-
810
1230
pF
Coss
Output Capacitance
VDS=25V
-
185
-
pF
Crss
Rg
Reverse Transfer Capacitance
f=1.0MHz
-
135
-
pF
Gate Resistance
f=1.0MHz
-
1.26
-
Ω
Min.
Typ.
IS=1.7A, VGS=0V
-
-
1.2
V
IS=7A, VGS=0V
-
21
-
ns
dI/dt=100A/µs
-
13
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
Test Conditions
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on min. copper pad.
Max. Units
AP6982M
Channel-1
60
60
10V
7.0V
5.0V
ID , Drain Current (A)
10V
7.0V
T A =25 o C
50
ID , Drain Current (A)
T A =25 o C
50
40
4.5V
30
20
5.0V
40
4.5V
30
20
V G =3.0V
10
10
V G =3.0V
0
0
0
1
2
0
3
1
2
3
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
28
1.6
ID=6A
26
T A =25 o C
ID=8A
V G =10V
1.4
Normalized RDS(ON)
RDS(ON) (mΩ )
24
22
20
18
1.2
1.0
0.8
16
14
0.6
2
4
6
8
10
-50
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
6
5
Normalized VGS(th) (V)
1.5
IS(A)
4
3
T j =150 o C
T j =25 o C
2
1.0
0.5
1
0
0.0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP6982M
Channel-1
f=1.0MHz
10000
14
ID=8A
VGS , Gate to Source Voltage (V)
12
V DS =16V
V DS =20V
V DS =24V
C (pF)
10
8
C iss
1000
6
4
C oss
C rss
2
0
100
0
10
20
30
40
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
ID (A)
10
100us
1ms
1
10ms
100ms
0.1
o
T A =25 C
Single Pulse
1s
DC
Normalized Thermal Response (R thja)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja =135o C/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q
AP6982M
Channel-2
60
60
10V
7.0V
o
T A = 25 C
5.0V
40
4.5V
30
20
40
5.0V
30
4.5V
20
V G =3.0V
10
V G =3.0V
10
0
0
0
1
2
0
3
1
V DS , Drain-to-Source Voltage (V)
2
3
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
38
1.6
ID=7A
V G =10V
ID=4A
35
1.4
o
Normalized R DS(ON)
T A =25 C
32
RDS(ON) (mΩ )
10V
7.0V
T A = 150 o C
50
ID , Drain Current (A)
ID , Drain Current (A)
50
29
26
1.2
1.0
0.8
23
0.6
20
2
4
6
8
-50
10
0
50
100
150
o
V GS ,Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
6
5
Normalized VGS(th) (V)
1.5
IS(A)
4
3
T j =150 o C
T j =25 o C
2
1.0
0.5
1
0
0.0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP6982M
Channel-2
f=1.0MHz
14
10000
ID=7A
V DS =16V
V DS =20V
V DS =24V
10
C (pF)
VGS , Gate to Source Voltage (V)
12
8
1000
C iss
6
4
C oss
2
C rss
0
100
0
5
10
15
20
25
1
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
10
ID (A)
100us
1ms
1
10ms
100ms
0.1
T A =25 o C
Single Pulse
1s
DC
0.01
Normalized Thermal Response (Rthja)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
Single Pulse
0.01
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135oC/W
0.001
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q