CENTRAL CBRHD-02

CBRHD SERIES
SURFACE MOUNT
HIGH DENSITY
0.5 AMP
SILICON BRIDGE RECTIFIER
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBRHD series
types are silicon full wave bridge rectifiers mounted in
a durable epoxy surface mount molded case, utilizing
glass passivated chips.
MARKING CODES:
CBRHD-02: CBD2
CBRHD-06: CBD6
CBRHD-04: CBD4
CBRHD-10: CBD10
HD DIP CASE
• This series is UL listed: file number E130224
FEATURES:
• Efficient use of board space: requires only 42mm2 of
board space vs. 120mm2 of board space needed for
industry standard 1.0 Amp surface mount bridge rectifier.
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Current (TA=40°C) (Note 1)
Average Forward Current (TA=40°C) (Note 2)
Peak Forward Surge Current
Operating & Storage Junction Temperature
• 50% higher density (Amps/mm2) than the industry
standard 1.0 Amp surface mount bridge rectifier.
• Glass passivated chips for high reliability.
SYMBOL
CBRHD CBRHD CBRHD CBRHD
-02
-04
-06
-10 * UNITS
VRRM
VR
200
400
600
1000
200
400
600
1000
V
V
VR(RMS)
IO
140
280
420
700
V
0.5
A
IO
0.8
A
IFSM
TJ, Tstg
30
A
-65 to +150
°C
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
IR
IR
VR=Rated VRRM
VR=Rated VRRM, TA=125°C
VF
CJ
IF=400mA
VR=4.0V, f=1.0MHz
TYP
MAX
UNITS
5.0
µA
500
µA
1.0
20
V
pF
Notes: (1) Mounted on Glass-Epoxy PCB.
(2) Mounted on Ceramic PCB.
* Available on special order, please consult factory.
R3 (4-January 2010)
CBRHD SERIES
SURFACE MOUNT
HIGH DENSITY
0.5 AMP
SILICON BRIDGE RECTIFIER
HD DIP CASE - MECHANICAL OUTLINE
MARKING CODES:
CBRHD-02: CBD2
CBRHD-04: CBD4
CBRHD-06: CBD6
CBRHD-10: CBD10
R3 (4-January 2010)
w w w. c e n t r a l s e m i . c o m