CBRHD SERIES SURFACE MOUNT HIGH DENSITY 0.5 AMP SILICON BRIDGE RECTIFIER w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CBRHD series types are silicon full wave bridge rectifiers mounted in a durable epoxy surface mount molded case, utilizing glass passivated chips. MARKING CODES: CBRHD-02: CBD2 CBRHD-06: CBD6 CBRHD-04: CBD4 CBRHD-10: CBD10 HD DIP CASE • This series is UL listed: file number E130224 FEATURES: • Efficient use of board space: requires only 42mm2 of board space vs. 120mm2 of board space needed for industry standard 1.0 Amp surface mount bridge rectifier. MAXIMUM RATINGS: (TA=25°C unless otherwise noted) Peak Repetitive Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Forward Current (TA=40°C) (Note 1) Average Forward Current (TA=40°C) (Note 2) Peak Forward Surge Current Operating & Storage Junction Temperature • 50% higher density (Amps/mm2) than the industry standard 1.0 Amp surface mount bridge rectifier. • Glass passivated chips for high reliability. SYMBOL CBRHD CBRHD CBRHD CBRHD -02 -04 -06 -10 * UNITS VRRM VR 200 400 600 1000 200 400 600 1000 V V VR(RMS) IO 140 280 420 700 V 0.5 A IO 0.8 A IFSM TJ, Tstg 30 A -65 to +150 °C ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS IR IR VR=Rated VRRM VR=Rated VRRM, TA=125°C VF CJ IF=400mA VR=4.0V, f=1.0MHz TYP MAX UNITS 5.0 µA 500 µA 1.0 20 V pF Notes: (1) Mounted on Glass-Epoxy PCB. (2) Mounted on Ceramic PCB. * Available on special order, please consult factory. R3 (4-January 2010) CBRHD SERIES SURFACE MOUNT HIGH DENSITY 0.5 AMP SILICON BRIDGE RECTIFIER HD DIP CASE - MECHANICAL OUTLINE MARKING CODES: CBRHD-02: CBD2 CBRHD-04: CBD4 CBRHD-06: CBD6 CBRHD-10: CBD10 R3 (4-January 2010) w w w. c e n t r a l s e m i . c o m