PROCESS CPD04 General Purpose Rectifier 500mA Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 26 x 26 MILS Die Thickness 8.5 MILS Anode Bonding Pad Area 14 x 14 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization Ni/Au - 5,000Å/2,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 18,000 PRINCIPAL DEVICE TYPES 1N645 thru 1N649 CBRHD-02 Series R4 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CPD04 Typical Electrical Characteristics R4 (22-March 2010) w w w. c e n t r a l s e m i . c o m