CMLD4448 SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD4448 type contains two (2) Isolated Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a PICOmini™ surface mount package. These devices are designed for high speed switching applications. MARKING CODE: C48 SOT-563 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL Peak Repetitive Reverse Voltage VRRM IF 120 V 250 mA IFRM IFSM 500 mA 4.0 A IFSM PD 1.0 A 250 mW -65 to +150 °C 500 °C/W Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance TJ, Tstg ΘJA UNITS ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX IR VR=50V 300 IR UNITS nA IR VR=50V, TA=125°C VR=100V BVR IR=100μA 120 150 VF IF=1.0mA 0.55 0.59 0.65 V VF IF=10mA 0.67 0.72 0.77 V VF IF=100mA 0.85 0.91 1.0 V CT VR=0, f=1.0MHz 1.5 pF trr IR=IF=10mA, RL=100Ω, Rec. to 1.0mA 4.0 ns 2.0 100 μA 500 nA V R3 (18-January 2010) CMLD4448 SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES SOT-563 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode D1 2) NC 3) Anode D2 4) Cathode D2 5) NC 6) Cathode D1 MARKING CODE: C48 R3 (18-January 2010) w w w. c e n t r a l s e m i . c o m