BAS28 SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS28 consists of two electrically isolated ultra-high speed silicon switching diodes manufactured by the epitaxial planar process and packaged in an epoxy molded SOT-143 surface mount case. This device is designed for high speed switching applications. MARKING CODE: A61 or JTW SOT-143 CASE MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage SYMBOL VR 75 Peak Repetitive Reverse Voltage VRRM IF 85 V 250 mA IFRM IFSM 500 mA 4.0 A IFSM IFSM 2.0 A 1.0 A PD TJ, Tstg 350 mW -65 to +150 °C ΘJA 357 °C/W Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0ms Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance UNITS ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX IR IR IR VR=25V, TA=150°C VR=75V V UNITS 30 μA 1.0 μA 50 μA VF VR=75V, TA=150°C IF=1.0mA 715 mV VF IF=10mA 855 mV VF IF=50mA 1.00 V VF IF=150mA 1.25 V CT VR=0, f=1.0MHz 2.0 pF trr 6.0 ns Qs IF=IR=10mA, Irr=1.0mA, RL=100Ω IF=10mA, VR=5.0V, RL=500Ω 45 pC VFR IF=10mA, tr=20ns 1.75 V R7 (20-October 2010) BAS28 SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES SOT-143 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) CATHODE D1 2) CATHODE D2 3) ANODE D2 4) ANODE D1 MARKING CODE: A61 or JTW R7 (20-October 2010) w w w. c e n t r a l s e m i . c o m