BAS56 SURFACE MOUNT DUAL, ISOLATED HIGH CURRENT SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS56 consists of two electrically isolated ultra-high speed silicon switching diodes manufactured by the epitaxial planar process and packaged in an epoxy molded surface mount SOT-143 case. This device is designed for high speed switching applications. MARKING CODE: L51 or WL5 SOT-143 CASE MAXIMUM RATINGS: (TA=25°C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=1.0μs Peak Forward Surge Current, tp=1.0s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL UNITS VR 60 V VRRM IF 60 V 200 mA IFRM IFSM 400 mA 4.0 A IFSM PD 1.0 A 350 mW TJ, Tstg ΘJA -65 to +150 °C 357 °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS IR VR=60V 100 nA IR 100 μA IR VR=60V, TA=150°C VR=75V 10 μA VF IF=10mA 0.75 V VF IF=200mA 1.0 V VF IF=500mA 1.25 V CT VR=0, f=1.0MHz 2.5 pF trr IF=IR=400mA, Irr=40mA, RL=100Ω IF=10mA, VR=5.0V, RL=500Ω 6.0 ns 50 pC IF=400mA, tr=30ns IF=400mA, tr=100ns 1.2 V 1.5 V Qs VFR VFR R7 (25-August 2010) BAS56 SURFACE MOUNT DUAL, ISOLATED HIGH CURRENT SILICON SWITCHING DIODES SOT-143 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) CATHODE D1 2) CATHODE D2 3) ANODE D2 4) ANODE D1 MARKING CODE: L51 or WL5 R7 (25-August 2010) w w w. c e n t r a l s e m i . c o m