CMKT2207 SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS SOT-363 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2207 consists of one 2222A NPN transistor and an individually isolated complementary 2907A PNP transistor, manufactured by the epitaxial planar process and epoxy molded in an SOT-363 surface mount package. This ULTRAmini™ device has been designed for small signal general purpose and switching applications. MARKING CODE: K70 SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA NPN (Q1) 75 40 6.0 PNP (Q2) 60 60 5.0 UNITS V V V mA mW °C °C/W 600 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) NPN (Q1) PNP (Q2) SYMBOL TEST CONDITIONS MIN MAX MIN MAX ICBO VCB=60V 10 ICBO VCB=50V 10 ICBO VCB=60V, TA=125°C 10 ICBO VCB=50V, TA=125°C 10 IEBO VEB=3.0V 10 ICEV VCE=60V, VEB(OFF)=3.0V 10 ICEV VCE=30V, VEB(OFF)=500mV 50 BVCBO IC=10μA 75 60 BVCEO IC=10mA 40 60 BVEBO IE=10μA 6.0 5.0 VCE(SAT) IC=150mA, IB=15mA 0.3 0.4 VCE(SAT) IC=500mA, IB=50mA 1.0 1.6 VBE(SAT) IC=150mA, IB=15mA 0.6 1.2 1.3 VBE(SAT) IC=500mA, IB=50mA 2.0 2.6 hFE VCE=10V, IC=0.1mA 35 75 hFE VCE=10V, IC=1.0mA 50 100 hFE VCE=10V, IC=10mA 75 100 hFE VCE=10V, IC=150mA 100 300 100 300 hFE VCE=1.0V, IC=150mA 50 hFE VCE=10V, IC=500mA 40 50 fT VCE=20V, IC=20mA, f=100MHz 300 fT VCE=20V, IC=50mA, f=100MHz 200 Cob VCB=10V, IE=0, f=1.0MHz 8.0 8.0 Cib VEB=0.5V, IC=0, f=1.0MHz 25 - UNITS nA nA nA nA nA nA nA V V V V V V V MHz MHz pF pF R4 (13-January 2010) CMKT2207 SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25°C) NPN (Q1) PNP (Q2) SYMBOL TEST CONDITIONS MIN MAX MIN MAX Cib VEB=2.0V, IC=0, f=1.0MHz 30 hie VCE=10V, IC=1.0mA, f=1.0kHz 2.0 8.0 hie VCE=10V, IC=10mA, f=1.0kHz 0.25 1.25 hre VCE=10V, IC=1.0mA, f=1.0kHz 8.0 hre VCE=10V, IC=10mA, f=1.0kHz 4.0 hfe VCE=10V, IC=1.0mA, f=1.0kHz 50 300 hfe VCE=10V, IC=10mA, f=1.0kHz 75 375 hoe VCE=10V, IC=1.0mA, f=1.0kHz 5.0 35 hoe VCE=10V, IC=10mA, f=1.0kHz 25 200 rb’Cc VCB=10V, IE=20mA, f=31.8MHz 150 NF VCE=10V, IC=100μA, RS=1.0kΩ, f=1.0kHz 4.0 ton VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA 45 td VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA 10 10 tr VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA 25 40 toff VCC=6.0V, IC=150mA, IB1=IB2=15mA 100 ts VCC=30V, IC=150mA, IB1=IB2=15mA 225 80 ts VCC=6.0V, IC=150mA, IB1=IB2=15mA tf VCC=30V, IC=150mA, IB1=IB2=15mA 60 tf VCC=6.0V, IC=150mA, IB1=IB2=15mA 30 UNITS pF kΩ kΩ x10-4 x10-4 μS μS ps dB ns ns ns ns ns ns ns ns SOT-363 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter Q1 2) Base Q1 3) Collector Q2 4) Emitter Q2 5) Base Q2 6) Collector Q1 MARKING CODE: K70 R4 (13-January 2010) w w w. c e n t r a l s e m i . c o m