CMKT2222A SURFACE MOUNT DUAL NPN SMALL SIGNAL SILICON SWITCHING TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2222A consists of two individually isolated 2222A NPN silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-363 surface mount package. This ULTRAmini™ device has been designed for small signal general purpose and switching applications. MARKING CODE: K22 SOT-363 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA UNITS V V V mA mW °C °C/W 75 40 6.0 600 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=60V 10 ICBO VCB=60V, TA=125°C 10 ICEV UNITS nA μA IEBO VCE=60V, VEB=3.0V VEB=3.0V BVCBO IC=10μA 75 V BVCEO IC=10mA 40 V BVEBO IE=10μA 6.0 VCE(SAT) IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE hFE fT Cob Cib IC=500mA, IB=50mA VCE=10V, IC=0.1mA VCE=10V, IC=1.0mA nA 10 nA V 0.3 0.6 V 1.0 V 1.2 V 2.0 V 35 50 VCE=10V, IC=10mA VCE=1.0V, IC=150mA 75 VCE=10V, IC=150mA VCE=10V, IC=500mA 100 VCE=20V, IC=20mA, f=100MHz VCB=10V, IE=0, f=1.0MHz 300 VEB=0.5V, IC=0, f=1.0MHz 10 50 300 40 MHz 8.0 pF 25 pF R4 (13-January 2010) CMKT2222A SURFACE MOUNT DUAL NPN SMALL SIGNAL SILICON SWITCHING TRANSISTORS ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25°C) SYMBOL TEST CONDITIONS MIN MAX hie VCE=10V, IC=1.0mA, f=1.0kHz 2.0 8.0 hie hre UNITS kΩ VCE=10V, IC=10mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=10mA, f=1.0kHz 0.25 VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=10mA, f=1.0kHz 50 300 75 375 VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=10mA, f=1.0kHz 5.0 35 μS 25 200 μS 150 ps NF VCB=10V, IE=20mA, f=31.8MHz VCE=10V, IC=100μA, RS=1.0kΩ, f=1.0kHz 4.0 dB td tr VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA 10 ns 25 ns ts tf VCC=30V, IC=150mA, IB1=IB2=15mA VCC=30V, IC=150mA, IB1=IB2=15mA 225 ns 60 ns hre hfe hfe hoe hoe rb’Cc 1.25 kΩ 8.0 x10-4 4.0 x10-4 SOT-363 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter Q1 2) Base Q1 3) Collector Q2 4) Emitter Q2 5) Base Q2 6) Collector Q1 MARKING CODE: K22 R4 (13-January 2010) w w w. c e n t r a l s e m i . c o m