CMXSH-3 SURFACE MOUNT TRIPLE ISOLATED SILICON SCHOTTKY DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXSH-3 type contains three (3) Isolated Schottky Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface mount package, and designed for applications requiring low forward voltage drop. MARKING CODE: XH3 SOT-26 CASE MAXIMUM RATINGS: (TA=25°C) Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current, tp=10ms Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL UNITS VRRM IF 30 V 100 mA IFRM IFSM 350 mA 750 mA PD TJ, Tstg 350 mW -65 to +150 °C ΘJA 357 °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IR VR=25V 90 500 nA IR 25 100 μA BVR VR=25V, TA=100°C IR=100μA VF IF=2.0mA 0.29 0.33 V VF IF=15mA 0.40 0.45 V VF IF=100mA 0.74 1.00 CT VR=1.0V, f=1.0MHz 7.0 trr IF=IR=10mA, Irr=1.0mA, RL=100Ω 30 V V pF 5.0 ns R5 (12-February 2010) CMXSH-3 SURFACE MOUNT TRIPLE ISOLATED SILICON SCHOTTKY DIODES SOT-26 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode D1 2) Anode D2 3) Anode D3 4) Cathode D3 5) Cathode D2 6) Cathode D1 MARKING CODE: XH3 R5 (12-February 2010) w w w. c e n t r a l s e m i . c o m