PROCESS CP611 Central Power Transistor TM Semiconductor Corp. PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL BASE Die Size 80 X 99 MILS Die Thickness 12.5 ± 1 MILS Base Bonding Pad Area 12 X 32 MILS Emitter Bonding Pad Area 13 X 46 MILS Top Side Metalization Al - 50,000Å Back Side Metalization Cr/Ni/Ag - 16,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 1,450 PRINCIPAL DEVICE TYPES CJD42C TIP42C BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R3 (21-September 2003) Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PROCESS CP611 Typical Electrical Characteristics R3 (21-September 2003)