CP312 PROCESS Central Power Transistor TM Semiconductor Corp. NPN - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 70 x 70 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 11.4 x 18 MILS Emitter Bonding Pad Area 13.7 x 23.6 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Ti / Ni / Ag 11,300Å GEOMETRY GROSS DIE PER 4 INCH WAFER 2,200 E PRINCIPAL DEVICE TYPES CZT3120 B BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 R3 (26-March 2004) Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PROCESS CP312 Typical Electrical Characteristics R3 (26-March 2004)