CS223M SURFACE MOUNT 0.8 AMP SILICON SCR 600 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CS223M type is an epoxy molded Silicon Controlled Rectifier designed for circuit sensing, detection and control applications including lamp drivers and small motor control MARKING: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) Peak Repetitive Off-State Voltage SYMBOL UNITS VDRM, VRRM IT(RMS) 600 0.8 A ITSM I2t 10 A 0.24 A2s PGM PG (AV) 2.0 W 0.1 W IGM VGM 1.0 A 8.0 V -40 to +125 °C Storage Temperature TJ Tstg -40 to +150 °C Thermal Resistance ΘJA 62.5 °C/W RMS On-State Current (TC=60°C) Peak One Cycle Surge, t=10ms I2t Value for Fusing, t=10ms Peak Gate Power, tp=10μs Average Gate Power Dissipation Peak Gate Current, tp=10μs Peak Gate Voltage, tp=10μs Operating Junction Temperature ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IDRM, IDRM, IRRM IRRM Rated VDRM, Rated VDRM, TYP VRRM, RGK=1KΩ VRRM, RGK=1KΩ, TC=125°C IGT IH VD=12V RGK=1KΩ VGT VTM VD=12V ITM=1.0A, tp=380μs dv/dt VD=2 /3 VDRM, RGK=1KΩ, TC=125°C 25 V MAX UNITS 1.0 μA 100 μA 20 200 μA 0.25 5.0 mA 0.61 0.8 V 1.2 1.7 V V/μs R1 (12-February 2010) CS223M SURFACE MOUNT 0.8 AMP SILICON SCR 600 VOLTS SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Gate 2) Anode 3) Cathode 4) Anode MARKING: FULL PART NUMBER R1 (12-February 2010) w w w. c e n t r a l s e m i . c o m