CXT5551HC SURFACE MOUNT HIGH CURRENT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5551HC type is an high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications. MARKING: FULL PART NUMBER SOT-89 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL UNITS VCBO VCEO 180 V 160 V VEBO IC 6.0 V 1.0 A PD TJ, Tstg 1.2 W -65 to +150 °C ΘJA 104 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ICBO VCB=120V 50 nA ICBO 50 µA IEBO VCB=120V, TA=100°C VEB=4.0V 50 nA BVCBO IC=100µA 180 V BVCEO IC=1.0mA 160 V BVEBO IE=10µA 6.0 VCE(SAT) IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA 0.15 V 0.20 V IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA 1.00 V 1.00 V VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=50mA fT VCE=10V, IC=1.0A VCE=10V, IC=10mA, f=100MHz Cob VCB=10V, IE=0, f=1.0MHz V 80 80 250 30 10 100 MHz 15 pF R1 (23-February 2010) CXT5551HC SURFACE MOUNT HIGH CURRENT NPN SILICON TRANSISTOR SOT-89 CASE - MECHANICAL OUTLINE (Bottom View) LEAD CODE: 1) Emitter 2) Collector 3) Base MARKING: FULL PART NUMBER R1 (23-February 2010) w w w. c e n t r a l s e m i . c o m