CXT3019 SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT3019 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose amplifier applications. MARKING: FULL PART NUMBER SOT-89 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO 140 UNITS V 80 V VEBO IC 7.0 V 1.0 A ICM PD 1.5 A 1.2 W TJ, Tstg ΘJA -65 to +175 °C 125 °C/W MAX 10 UNITS nA 10 nA ELECTRICAL SYMBOL ICBO IEBO CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN VCB=90V VEB=5.0V BVCBO IC=100μA 140 V BVCEO IC=30mA 80 V BVEBO IE=100μA 7.0 V VCE(SAT) VCE(SAT) IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA VBE(SAT) hFE hFE hFE hFE hFE fT Cob Cib NF VCE=10V, IC=0.1mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=10V, VCE=10V, 0.2 V 1.1 V 50 90 100 IC=500mA 50 IC=1.0A 15 VCE=10V, IC=50mA, f=1.0MHz VCB=10V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz 100 VCE=10V, IC=100μA, RS=1.0kΩ, f=1.0kHz V 0.5 300 MHz 12 pF 60 pF 4.0 dB R7 (23-February 2010) CXT3019 SURFACE MOUNT NPN SILICON TRANSISTOR SOT-89 CASE - MECHANICAL OUTLINE (Bottom View) LEAD CODE: 1) Emitter 2) Collector 3) Base MARKING: FULL PART NUMBER R7 (23-February 2010) w w w. c e n t r a l s e m i . c o m