CENTRAL CZT853_10

CZT853
SURFACE MOUNT
HIGH CURRENT
NPN SILICON TRANSISTOR
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT853 type is
a high current NPN silicon transistor manufactured by
the epitaxial planar process, epoxy molded in a surface
mount package, designed for high voltage and high
current amplifier applications.
MARKING: FULL PART NUMBER
PNP Complement: CZT953
SOT-223 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (Note 1)
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL
SYMBOL
ICBO
ICBO
ICER
IEBO
BVCBO
BVCER
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
fT
Cob
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
ΘJA
CHARACTERISTICS: (TA=25°C unless
TEST CONDITIONS
VCB=150V
VCB=150V, TA=100°C
VCE=150V, RBE≤1.0kΩ
VEB=6.0V
IC=100μA
IC=10mA, RBE≤1.0kΩ
IC=10mA
IE=100μA
IC=100mA, IB=5.0mA
IC=2.0A, IB=100mA
IC=5.0A, IB=500mA
IC=5.0A, IB=500mA
VCE=2.0V, IC=10mA
VCE=2.0V, IC=2.0A
VCE=2.0V, IC=4.0A
VCE=2.0V, IC=10A
VCE=10V, IC=100mA, f=50MHz
VCB=10V, IE=0, f=1.0MHz
200
100
6.0
6.0
3.0
-65 to +150
41.7
otherwise noted)
MIN
TYP
200
200
100
6.0
100
100
50
20
220
210
110
8.0
22
135
200
100
30
190
38
MAX
10
1.0
10
10
50
170
340
1.25
UNITS
V
V
V
A
W
°C
°C/W
UNITS
nA
μA
nA
nA
V
V
V
V
mV
mV
mV
V
300
MHz
pF
Notes: (1) FR-4 Epoxy PC Board with copper mounting pad area of 4in2 (minimum)
R2 (1-March 2010)
CZT853
SURFACE MOUNT
HIGH CURRENT
NPN SILICON TRANSISTOR
SOT-223 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Collector
3) Emitter
4) Collector
MARKING:
FULL PART NUMBER
R2 (1-March 2010)
w w w. c e n t r a l s e m i . c o m