CXT3150 SURFACE MOUNT NPN SILICON POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT3150 type is a NPN Silicon Power Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current, high gain, fast switching applications. MARKING: FULL PART NUMBER SOT-89 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage SYMBOL UNITS VCBO VCEO Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance 50 V 25 V VEBO IC 7.0 V 5.0 A IB PD 1.0 A 1.2 W TJ, Tstg ΘJA -65 to +150 °C 104 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ICBO VCB=50V 1.0 µA IEBO VEB=7.0V 1.0 µA BVCEO IC=10mA VCE(SAT) IC=3.0A, IB=150mA IC=4.0A, IB=200mA 0.5 V 0.6 V IC=3.0A, IB=150mA IC=4.0A, IB=200mA 1.10 V 1.40 V VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE fT Cob 25 VBE=2.0V, IC=500mA VCE=2.0V, IC=2.0A 250 VCE=2.0V, VCE=6.0V, 50 IC=5.0A IC=50mA, f=200MHz VCB=10V, IE=0, f=1.0MHz V 550 150 150 MHz 50 pF R6 (23-February 2010) CXT3150 SURFACE MOUNT NPN SILICON POWER TRANSISTOR SOT-89 CASE - MECHANICAL OUTLINE (Bottom View) LEAD CODE: 1) Emitter 2) Collector 3) Base MARKING: FULL PART NUMBER R6 (23-February 2010) w w w. c e n t r a l s e m i . c o m