PN2906 PN2907 PN2906A PN2907A PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR PN2906, PN2907 series types are silicon PNP epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA PN2906 PN2907 60 40 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) PN2906 PN2907 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=50V 20 ICEV VCE=30V, VEB=0.5V 50 BVCBO IC=10μA 60 BVCEO IC=10mA 40 BVEBO IE=10μA 5.0 VCE(SAT) IC=150mA, IB=15mA 0.4 VCE(SAT) IC=500mA, IB=50mA 1.6 VBE(SAT) IC=150mA, IB=15mA 1.3 VBE(SAT) IC=500mA, IB=50mA 2.6 fT VCE=20V, IC=50mA, f=200MHz 200 VCB=10V, IE=0, f=1.0MHz 8.0 Cob Cib VEB=2.0V, IC=0, f=1.0MHz 30 ton VCC=30V, IC=150mA, IB1=15mA 45 toff VCC=6.0V, IC=150mA, IB1=IB2=15mA 100 PN2906A PN2907A 60 60 5.0 600 625 -65 to +150 200 PN2906A PN2907A MIN MAX 10 50 60 60 5.0 0.4 1.6 1.3 2.6 200 8.0 30 45 100 UNITS V V V mA mW °C °C/W UNITS nA nA V V V V V V V MHz pF pF ns ns R2 (30-January 2012) PN2906 PN2907 PN2906A PN2907A PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C) SYMBOL hFE hFE hFE hFE hFE hFE hFE hFE hFE TEST CONDITIONS VCE=10V, IC=0.1mA (PN2906, PN2907) VCE=10V, IC=0.1mA (PN2906A, PN2907A) VCE=10V, IC=1.0mA (PN2906, PN2907) VCE=10V, IC=1.0mA (PN2906A, PN2907A) VCE=10V, IC=10mA (PN2906, PN2907) VCE=10V, IC=10mA (PN2906A, PN2907A) VCE=10V, IC=150mA VCE=10V, IC=500mA (PN2906, PN2907) VCE=10V, IC=500mA (PN2906A, PN2907A) PN2906 PN2906A MIN MAX 20 40 25 40 35 40 40 120 20 40 - PN2907 PN2907A MIN MAX 35 75 50 100 75 100 100 300 30 50 - TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R2 (30-January 2012) w w w. c e n t r a l s e m i . c o m