CHONGQING PINGYANG ELECTRONICS CO.,LTD. BR805 THRU BR810 SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE：50-1000V CURRENT：8.0A FEATURES KBPC-8/10 ·Surge overload ratings-125 Amperes ·Low forward voltage drop .296(7.5) .255(6.5) .052(1.3) DIA. .048(1.2) TYP. .750 (19.1) .770(19.6) .730(18.5) .520(13.2) .480(12.2) HOLE FOR NO. 6 SCREW MECHANICAL DATA ·Case:Metal or plastic shell with plastic encapsulation ·Epoxy: UL 94V-0 rate flame retardant ·Lead: MIL-STD- 202E, Method 208 guaranteed ·Polarity: Symbols molded or marked on body ·Mounting: Thru hole for 6# screw ·Weight: 6.9 grams MIN. .520(13.2) .770(19.6) .480(12.2) .730(18.5) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL BR805 BR81 Maximum Recurrent Peak Reverse Voltage Maximum RMS Bridge Input Voltage Maximum DC Blocking Voltage Maximum Average Forward rectified Output Current at TC=75°C Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Maximum Forward Voltage Drop per element at 4.0A DC Maximum DC Reverse Current @ TA=25°C at Rated DC Blocking Voltage @ TA=100°C per element VRRM VRMS VDC 50 35 50 100 70 100 BR82 BR84 BR86 BR88 BR810 units 200 140 200 400 280 400 600 420 600 800 560 800 1000 700 1000 V V V Io 8.0 A IFSM 250 A VF 1.1 V IR 10 µA 500 2 2 It 166 A Sec I2t Rating for Fusing (t<8.3ms) CJ 200 pF Typical Junction Capacitance (Note 1) Notes: 1.Measured at 1MHz and applied reverse voltage of 4.0 volts 2. Thermal Resistance from Junction to Ambient and fromjunction to lead mounted on P.C.B. with 0.5×0.5”(13×13mm) copper pads. １ PDF 文件使用 "pdfFactory Pro" 试用版本创建 www.fineprint.cn