N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN0540A ISSUE 2 MARCH 94 FEATURES * 400 Volt VDS * RDS(on)=50Ω D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS VALUE 400 UNIT V Continuous Drain Current at Tamb=25°C ID 90 mA Pulsed Drain Current IDM 600 mA Gate-Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot 700 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BVDSS 400 Gate-Source Threshold Voltage VGS(th) 1 Gate-Body Leakage Zero Gate Voltage Drain Current MAX. UNIT CONDITIONS. V ID=1mA, VGS=0V 3 V ID=1mA, VDS= VGS IGSS 20 nA VGS=± 20V, VDS=0V IDSS 10 400 µA µA VDS=400 V, VGS=0 VDS=320 V, VGS=0V, T=125°C(2) mA VDS=25 V, VGS=10V Ω VGS=10V,ID=100mA mS VDS=25V,ID=100mA On-State Drain Current(1) ID(on) Static Drain-Source On-State Resistance (1) RDS(on) Forward Transconductance(1)(2gfs ) 150 50 100 Input Capacitance (2) Ciss 70 pF Common Source Output Capacitance (2) Coss 10 pF Reverse Transfer Capacitance Crss (2) 4 pF Turn-On Delay Time (2)(3) td(on) 7 ns Rise Time (2)(3) tr 7 ns Turn-Off Delay Time (2)(3) td(off) 16 ns Fall Time (2)(3) tf 10 ns 3-356 VDS=25 V, VGS=0V, f=1MHz VDD ≈ 25V, ID=100mA ( 1