TH97/2478 www.eicsemi.com BAX18 IATF 0113686 SGS TH07/1033 TH09/2479 SWITCHING DIODE DO - 35 Glass (DO-204AH) FEATURES : • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 75 V • Repetitive peak forward current: max. 2 A. • Pb / RoHS Free 1.00 (25.4) min. 0.079(2.0 )max. 0.150 (3.8) max. Cathode Mark 1.00 (25.4) min. 0.020 (0.52)max. MECHANICAL DATA : Case: DO-35 Glass Case Weight: approx. 0.13g Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.) Parameter Symbol Value Unit VRRM 75 V VR 75 V Maximum Repetitive Peak Reverse Voltage Maximum Continuous Reverse Voltage IF 500 mA Maximum Average Forward Current IF(AV) 400 mA Maximum Repetitive Peak Forward Current IFRM 2 A Maximum Non-repetitive Peak Forward Current at t = 10ms, Tj = 25°C IFSM 9 A Maximum Power Dissipation PD 450 mW Maximum Junction Temperature TJ 200 °C Storage Temperature Range TS -65 to + 200 °C Maximum Continuous Forward Current Electrical Characteristics (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit µA IR VR = 75 V VR = 75 V, Tj = 150°C - - 5 100 Forward Voltage VF IF = 300 mA - - 1.0 V Diode Capacitance Cd f = 1MHz ; VR = 0 - - 35 pF Reverse Recovery Time Trr - - 50 ns Reverse Current IF = 30mA , IR = 30mA Page 1 of 2 IRR = 3mA , RL = 100 Ω measured at IR = 3 mA Rev. 02 : March 25, 2005 TH97/2478 www.eicsemi.com IATF 0113686 SGS TH07/1033 TH09/2479 RATING AND CHARACTERISTIC CURVES ( BAX18 ) FIG. 1 MAXIMUM FORWARD CURRENT VERSUS AMBIENT TEMPERATURE. FIG. 2 TYPICAL FORWARD VOLTAGE 10 500 AVERAGE FORWARD CURRENT, IF(AV) (mA) Forward Current , IF (A) Lead Length 10mm. 400 300 200 1 0.1 TJ = 25°C 0.01 100 0 0.001 0 100 200 0 0.4 0.8 1.0 1.2 1.4 Forward Voltage , VF (V) Ambient Temperature , Ta (°C) FIG. 3 TYPICAL DIODE CAPACITANCE AS A FUNCTION OF REVERSE VOLTAGE FIG.4 TYPICAL REVERESE CURRENT VS JUNCTION TEMPERATURE 40 103 Reverse Current , IR (µA) Diode Capacitance , Cd (pF) VR = 75V 30 f = 1MHz; TJ = 25°C 20 10 10 1 10-1 10-2 0 0 10 Reverse Voltage , VR (V) Page 2 of 2 102 20 0 100 200 Junction Temperature , Ta (°C) Rev. 02 : March 25, 2005