FAIRCHILD DB3

DB3-DB3TG
150mW Bi-directional Trigger Diodes
Features
•
•
•
•
•
•
•
•
•
•
VBO : 32V Version
Low break-over current
DO-35 package (JEDEC)
Hermetically sealed glass
Compression bonded construction
All external surfaces are corrosion resistant and
terminals are readily solderable
RoHS compliant
High reliability glass passivation insuring parameter stability and
protection against junction contamination.
Terminal: Pure tin plated, lead free, solderable
per MIL-STD-202, Method 208 guaranteed
High temperature soldering guaranteed : 260°C/10 seconds
DO-35
Color Band Denotes Cathode
Absolute Maximum Ratings and Electrical Characteristics
Symbol
VBO
±VBO
Break-over Voltage
Break-over Voltage Symmetry
IBO
Break-over Current
Δ V
Dynamic Break-over Voltage
DB3TG
@ C=22nF Min.
28
30
V
Typ.
32
32
V
Max.
36
34
V
@ C=22nF Max.
±3
±2
V
@ C=22nF Max.
100
15
μA
5
9
V
@ IBO to IF=10mA Min.
10
μA
*see diagram 1 Min.
5
V
Power Dissipation
150
mW
Repetitive Peak Forward Current, Pulse Width=20μsec
Typical Thermal Resistance, Junction to Ambient (Note1)
2
400
A
°C/W
-40 to +125
°C
Leakage Current
Output Voltage
PD
TJ, TSTG
Units
DB3
@ VB=0.5VBO(Max.) Max.
IB
VO
IFRM
Rθja
Value
Parameter
Junction and Storage Temperature Range
* Rating at 25°C ambient temperature unless otherwise specified.
* Notes: 1. Valid provided that electrodes are kept at ambient temperature
© 2010 Fairchild Semiconductor Corporation
DB3-DB3TG Rev. A1
www.fairchildsemi.com
1
DB3-DB3TG — 150mW Bi-directional Trigger Diodes
September 2010
IF=10m
VBO
: Break-Over Voltage
IBO
IBO
: Break-Over Current
IB
ǻV
: Dynamic Breakover Voltage
IB
: Leakage Current at V B=0.5*VBO
VF
: Voltage at Current I F=10mA
VB=0.5*VBO
VF
ǻV
VBO
Diagram 1 : Test circuit
Figure 1. Admissible Power Dissipation Curve
Power Dissipation (mW)
160
120
80
40
0
0
10 20 30 40 50 60 70 80 90 100 110 120 130
Ambient Tempeatature ( oC)
Figure 2. Relative Variation of VBO versus
Junction Temperature
Figure 3. Repetitive Peak Pulse Current versus
Pulse Duration (maximum values)
Repetitive peak pulse current (A)
VBO [Tj] / VBO [Tj=25°C]
1.08
1.07
1.06
1.05
1.04
1.03
1.02
1.01
1.00
25
50
75
100
10
1
0.1
1
125
10
100
tp (ȝs)
Tj(°C)
© 2010 Fairchild Semiconductor Corporation
DB3-DB3TG Rev. A1
100
www.fairchildsemi.com
2
DB3-DB3TG — 150mW Bi-directional Trigger Diodes
Typical Performance Characteristics
DB3-DB3TG — 150mW Bi-directional Trigger Diodes
Physical Dimensions
DO-35
Dimensions in Millimeters
© 2010 Fairchild Semiconductor Corporation
DB3-DB3TG Rev. A1
www.fairchildsemi.com
3
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Rev. I49
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