DB3-DB3TG 150mW Bi-directional Trigger Diodes Features • • • • • • • • • • VBO : 32V Version Low break-over current DO-35 package (JEDEC) Hermetically sealed glass Compression bonded construction All external surfaces are corrosion resistant and terminals are readily solderable RoHS compliant High reliability glass passivation insuring parameter stability and protection against junction contamination. Terminal: Pure tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed High temperature soldering guaranteed : 260°C/10 seconds DO-35 Color Band Denotes Cathode Absolute Maximum Ratings and Electrical Characteristics Symbol VBO ±VBO Break-over Voltage Break-over Voltage Symmetry IBO Break-over Current Δ V Dynamic Break-over Voltage DB3TG @ C=22nF Min. 28 30 V Typ. 32 32 V Max. 36 34 V @ C=22nF Max. ±3 ±2 V @ C=22nF Max. 100 15 μA 5 9 V @ IBO to IF=10mA Min. 10 μA *see diagram 1 Min. 5 V Power Dissipation 150 mW Repetitive Peak Forward Current, Pulse Width=20μsec Typical Thermal Resistance, Junction to Ambient (Note1) 2 400 A °C/W -40 to +125 °C Leakage Current Output Voltage PD TJ, TSTG Units DB3 @ VB=0.5VBO(Max.) Max. IB VO IFRM Rθja Value Parameter Junction and Storage Temperature Range * Rating at 25°C ambient temperature unless otherwise specified. * Notes: 1. Valid provided that electrodes are kept at ambient temperature © 2010 Fairchild Semiconductor Corporation DB3-DB3TG Rev. A1 www.fairchildsemi.com 1 DB3-DB3TG — 150mW Bi-directional Trigger Diodes September 2010 IF=10m VBO : Break-Over Voltage IBO IBO : Break-Over Current IB ǻV : Dynamic Breakover Voltage IB : Leakage Current at V B=0.5*VBO VF : Voltage at Current I F=10mA VB=0.5*VBO VF ǻV VBO Diagram 1 : Test circuit Figure 1. Admissible Power Dissipation Curve Power Dissipation (mW) 160 120 80 40 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Ambient Tempeatature ( oC) Figure 2. Relative Variation of VBO versus Junction Temperature Figure 3. Repetitive Peak Pulse Current versus Pulse Duration (maximum values) Repetitive peak pulse current (A) VBO [Tj] / VBO [Tj=25°C] 1.08 1.07 1.06 1.05 1.04 1.03 1.02 1.01 1.00 25 50 75 100 10 1 0.1 1 125 10 100 tp (ȝs) Tj(°C) © 2010 Fairchild Semiconductor Corporation DB3-DB3TG Rev. A1 100 www.fairchildsemi.com 2 DB3-DB3TG — 150mW Bi-directional Trigger Diodes Typical Performance Characteristics DB3-DB3TG — 150mW Bi-directional Trigger Diodes Physical Dimensions DO-35 Dimensions in Millimeters © 2010 Fairchild Semiconductor Corporation DB3-DB3TG Rev. A1 www.fairchildsemi.com 3 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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