MBR20200CT Dual High Voltage Schottky Rectifier Features • • • • • • Low Forward Voltage Drop Low Power Loss and High Efficiency High Surge Capability RoHS Compliant Matte Tin(Sn) Lead Finish Terminal Leads Surface is Corrosion Resistant and can withstand to 260°C • Wave Soldering or per MIL-STD-750 Method 2026. Absolute Maximum Ratings* Symbol VRRM VR 1 2 3 Mark : MBR20200CT 1. Anode 3. Anode 2. and Tab Cathode Ta = 25°C unless otherwise noted Parameter Value Unit 200 V 200 V 10 (Per Leg) 20 (Per Device) A Maximum Repetitive Reverse Voltage Maximum DC Reverse Voltage IF(AV) Average Rectified Forward Current, TC=115°C IFSM Peak Forward Surge Current, 8.3mS Half Sine wave TSTG Storage Temperature Range 150 A -55 to +150 °C Operating Junction Temperature 150 °C TJ * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics* Ta = 25°C unless otherwise noted Symbol RθJC Parameter Thermal Resistance, Junction to Case per Leg Thermal Resistance, Junction to Ambient per Leg RθJA * MIL standard 883-1012 & JESD51-10 Electrical Characteristics* Symbol IR Parameter Reverse Current Unit 1.5 °C/W 62.5 °C/W Ta = 25°C unless otherwise noted Test Condition TC = 25 °C TC = 125 °C VR= 200V VR= 200V TC = 25 °C IF= 10A IF= 10A TC = 125 °C Forward Voltage VF IF= 20A TC = 25 °C IF= 20A TC = 125 °C * DC Item are tested by Pulse Test : Pulse Width≤300μs, Duty Cycle≤2% © 2010 Fairchild Semiconductor Corporation MBR20200CT Rev. A2 Max. Min. Max. Unit 0.2 5 mA 0.9 0.8 1.0 0.9 V www.fairchildsemi.com 1 MBR20200CT — Dual High Voltage Schottky Rectifier November 2010 Figure 1. Forward Current Characteristics Figure 2. Reverse Leakage Current 1000 100 1 Reverse Current, IR[uA] Forward Current, IF[A] 10 o T J=125 C o T J=75 C 0.1 o T J=25 C o TJ=125 C 10 1 o TJ=75 C 0.1 0.01 o 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 TJ=25 C 1E-3 1.0 50 Forward Voltage Drop, V F[V] Figure 3.Junction Capacitance 150 200 Figure 4. Power Derating [A] 30 1 0.9 0.8 0.7 F(AV) f=1mhz 0.6 Average Forward Current, I Juntion Capacitance, CJ[nF] 100 Reverse Voltage, VR[V] 0.5 0.4 0.3 0.2 0.1 0 2 4 6 8 DC 20 15 10 5 0 0 10 25 50 75 100 125 150 o Case Temperature, T C[ C] Reverse Voltage, V R[V] © 2010 Fairchild Semiconductor Corporation MBR20200CT Rev. A2 25 www.fairchildsemi.com 2 MBR20200CT — Dual High Voltage Schottky Rectifier Typical Performance Characteristics MBR20200CT — Dual High Voltage Schottky Rectifier Phisical Dimensions TO-220 [ DUAL GAUGE ] Dimensions in Millimeters © 2010 Fairchild Semiconductor Corporation MBR20200CT Rev. 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