MOC211M, MOC212M, MOC213M Small Ouline Optocouplers Transistor Output Features Description ■ These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for throughthe-board mounting. ■ ■ ■ ■ ■ UL Recognized (File #E90700, Volume 2) VDE Recognized (File #136616) (add option ‘V’ for VDE approval, e.g., MOC211VM) Convenient Plastic SOIC-8 Surface Mountable Package Style Standard SOIC-8 Footprint, with 0.050" Lead Spacing High Input-Output Isolation of 2500 VAC(rms) Guaranteed Minimum BVCEO of 30V Guaranteed Applications ■ General Purpose Switching Circuits ■ Interfacing and Coupling Systems of Different Potentials and Impedances ■ Regulation Feedback Circuits ■ Monitor and Detection Circuits Schematic Package Outline ANODE 1 CATHODE 2 8 N/C 7 BASE Figure 2. Package Outline N/C 3 6 COLLECTOR N/C 4 5 EMITTER Figure 1. Schematic ©2005 Fairchild Semiconductor Corporation MOC211M, MOC212M, MOC213M Rev. 1.0.2 www.fairchildsemi.com MOC211M, MOC212M, MOC213M — Small Ouline Optocouplers Transistor Output April 2013 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA = 25°C unless otherwise specified. Symbol Rating Value Unit Forward Current – Continuous 60 mA Forward Current – Peak (PW = 100 µs, 120 pps) 1.0 A VR Reverse Voltage 6.0 V PD LED Power Dissipation @ TA = 25°C Derate above 25°C 90 0.8 mW mW/°C VCEO Collector-Emitter Voltage 30 V VECO Emitter-Collector Voltage 7.0 V VCBO Collector-Base Voltage 70 V IC Collector Current-Continuous 150 mA PD Detector Power Dissipation @ TA = 25°C Derate above 25°C 150 1.76 mW mW/°C Input-Output Isolation Voltage (f = 60 Hz, t = 1 minute)(1)(2)(3) 2500 Vac(rms) PD Total Device Power Dissipation @ TA = 25°C Derate above 25°C 250 2.94 mW mW/°C TA Ambient Operating Temperature Range -40 to +100 °C Storage Temperature Range -40 to +150 °C 260 °C Emitter IF IF (pk) Detector Total Device VISO Tstg TL Lead Soldering Temperature (1/16" from case, 10 second duration) Notes: 1. Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating. 2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common. 3. VISO rating of 2500 VAC(rms) for t = 1 minute is equivalent to a rating of 3,000 VAC(rms) for t = 1 second. ©2005 Fairchild Semiconductor Corporation MOC211M, MOC212M, MOC213M Rev. 1.0.2 www.fairchildsemi.com 2 MOC211M, MOC212M, MOC213M — Small Ouline Optocouplers Transistor Output Absolute Maximum Ratings Symbol Parameter Test Conditions Min. Typ.* Max. Unit Emitter VF Input Forward Voltage IF = 10 mA 1.15 1.5 V IR Reverse Leakage Current VR = 6.0 V 0.001 100 µA CIN Input Capacitance 18 pF Detector ICEO1 ICEO2 1.0 1.0 50 nA µA Collector-Emitter Dark Current VCE = 10 V, TA = 25°C VCE = 10 V, TA = 100°C BVCEO Collector-Emitter Breakdown Voltage IC = 100 µA 30 100 V BVECO Emitter-Collector Breakdown Voltage IE = 100 µA 7.0 10 V CCE Collector-Emitter Capacitance f = 1.0 MHz, VCE = 0 7.0 pF Collector-Output Current(4) MOC211M MOC212M MOC213M IF = 10 mA, VCE = 10 V Isolation Surge Voltage(1)(2)(3) f = 60 Hz AC Peak, t = 1 minute Coupled CTR VISO RISO Isolation Resistance (2) V = 500 V 20 50 100 % 2500 Vac(rms) 10 11 Ω VCE (sat) Collector-Emitter Saturation Voltage IC = 2.0 mA, IF = 10 mA 0.4 V Isolation Capacitance(2) V = 0 V, f = 1 MHz 0.2 pF ton Turn-On Time IC = 2.0 mA, VCC = 10 V, RL = 100 Ω (Fig. 12) 7.5 µs toff Turn-Off Time IC = 2.0 mA, VCC = 10 V, RL = 100 Ω (Fig. 12) 5.7 µs tr Rise Time IC = 2.0 mA, VCC = 10 V, RL = 100 Ω (Fig. 12) 3.2 µs tf Fall Time IC = 2.0 mA, VCC = 10 V, RL = 100 Ω (Fig. 12) 4.7 µs CISO *Typical values at TA = 25°C Notes: 1. Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating. 2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common. 3. VISO rating of 2500 VAC(rms) for t = 1 minute is equivalent to a rating of 3,000 VAC(rms) for t = 1 second. 4. Current Transfer Ratio (CTR) = IC / IF x 100 %. ©2005 Fairchild Semiconductor Corporation MOC211M, MOC212M, MOC213M Rev. 1.0.2 www.fairchildsemi.com 3 MOC211M, MOC212M, MOC213M — Small Ouline Optocouplers Transistor Output Electrical Characteristics TA = 25°C unless otherwise specified. 1.8 I C – OUTPUT COLLECTOR CURRENT (NORMALIZED) 10 1.7 VF – FORWARD VOLTAGE (V) 1.6 1.5 1.4 TA = –55°C 1.3 1.2 TA = 25°C 1.1 TA = 100°C 1.0 1 10 100 VCE = 5 V NORMALIZED TO IF = 10 mA 1 0.1 IF – LED FORWARD CURRENT (mA) 0.01 Figure 3. LED Forward Voltage vs. Forward Current 0.1 1 10 100 IF – LED INPUT CURRENT (mA) Figure 4. Output Curent vs. Input Current 1.6 I C – OUTPUT COLLECTOR CURRENT (NORMALIZED) I C – OUTPUT COLLECTOR CURRENT (NORMALIZED) 10 1 NORMALIZED TO TA = 25°C 0.1 -80 -60 -40 -20 0 20 40 60 80 100 1.4 1.2 1.0 0.8 0.6 0.4 0.2 I F = 10 mA NORMALIZED TO VCE = 5 V 0.0 0 120 1 2 3 4 5 6 7 8 9 10 VCE – COLLECTOR-EMITTER VOLTAGE (V) TA – AMBIENT TEMPERATURE (°C) Figure 6. Output Current vs. Collector-Emitter Voltage Figure 5. Output Current vs. Ambient Temperature 10000 0.9 VCE = 10 V 1000 IF = 20 m A 0.8 0.7 100 NORMALIZED CTR I CEO – COLLECTOR -EMITTER DARK CURRENT (nA) 1.0 10 IF = 10 mA 0.6 0.5 IF = 5 mA 0.4 0.3 0.2 1 VCE = 5 V, TA = 25°C Normalized to: CTR at RBE = Open 0.1 0.0 0.1 10 0 20 40 60 80 1000 RBE – BASE RESISTANCE (kΩ) TA – AMBIENT TEMPERATURE (°C) Figure 8. CTR vs. RBE (Unsaturated) Figure 7. Dark Current vs. Ambient Temperature ©2005 Fairchild Semiconductor Corporation MOC211M, MOC212M, MOC213M Rev. 1.0.2 100 100 www.fairchildsemi.com 4 MOC211M, MOC212M, MOC213M — Small Ouline Optocouplers Transistor Output Typical Performance Curves 1.0 4.0 0.9 3.5 0.8 3.0 0.7 NORMALIZED ton NORMALIZED CTR IF = 20 mA IF = 10 mA 0.6 0.5 IF = 5 mA 0.4 0.3 VCC = 10 V IC = 2 mA RL = 100 Ω NORMALIZED TO: ton AT RBE = OPEN 2.5 2.0 1.5 1.0 0.2 VCE = 0.3 V, TA = 25°C Normalized to: CTR at RBE = Open 0.1 0.0 10 0.5 100 0.0 0.01 1000 0.1 RBE – BASE RESISTANCE (kΩ) 1 10 100 RBE – BASE RESISTANCE (MΩ) Figure 10. Normalized ton vs. RBE Figure 9. CTR vs. RBE (Saturated) 1.6 1.4 NORMALIZED tofff 1.2 VCC = 10 V IC = 2 mA RL = 100 Ω NORMALIZED TO : tofff AT RBE = OPEN 1.0 0.8 0.6 0.4 0.2 0.0 0.01 0.1 1 10 100 RBE – BASE RESISTANCE (MΩ) Figure 11. Normalized toff vs. RBE TEST CIRCUIT WAVEFORMS VCC = 10 V INPUT PULSE IC IF INPUT RL 10% OUTPUT OUTPUT PULSE 90% RBE tr ton tf toff Adjust IF to produce IC = 2 mA Figure 12. Switching Time Test Circuit and Waveforms ©2005 Fairchild Semiconductor Corporation MOC211M, MOC212M, MOC213M Rev. 1.0.2 www.fairchildsemi.com 5 MOC211M, MOC212M, MOC213M — Small Ouline Optocouplers Transistor Output Typical Performance Curves (Continued) 8-pin SOIC Surface Mount 8 0.164 (4.16) 0.144 (3.66) SEATING PLANE 1 0.202 (5.13) 0.182 (4.63) 0.010 (0.25) 0.006 (0.16) 0.143 (3.63) 0.123 (3.13) 0.021 (0.53) 0.011 (0.28) 0.008 (0.20) 0.003 (0.08) 0.244 (6.19) 0.224 (5.69) 0.050 (1.27) Typ. Lead Coplanarity: 0.004 (0.10) MAX Recommended Pad Layout 0.024 (0.61) 0.060 (1.52) 0.275 (6.99) 0.155 (3.94) 0.050 (1.27) Dimensions in inches (mm). Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/ ©2005 Fairchild Semiconductor Corporation MOC211M, MOC212M, MOC213M Rev. 1.0.2 www.fairchildsemi.com 6 MOC211M, MOC212M, MOC213M — Small Ouline Optocouplers Transistor Output Package Dimensions MOC211M, MOC212M, MOC213M — Small Ouline Optocouplers Transistor Output Ordering Information Option Order Entry Identifier V V R2 R2 R2V R2V Description VDE 0884 Tape and Reel (2500 units per reel) VDE 0884, Tape and Reel (2500 units per reel) Marking Information 1 211 V X YY S 3 4 2 6 5 Definitions 1 Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option – See order entry table) 4 One digit year code, e.g., ‘8’ 5 Two digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code ©2005 Fairchild Semiconductor Corporation MOC211M, MOC212M, MOC213M Rev. 1.0.2 www.fairchildsemi.com 7 8.0 ± 0.10 2.0 ± 0.05 3.50 ± 0.20 0.30 MAX Ø1.5 MIN 1.75 ± 0.10 4.0 ± 0.10 5.5 ± 0.05 8.3 ± 0.10 5.20 ± 0.20 0.1 MAX 6.40 ± 0.20 12.0 ± 0.3 Ø1.5 ± 0.1 User Direction of Feed Dimensions in mm ©2005 Fairchild Semiconductor Corporation MOC211M, MOC212M, MOC213M Rev. 1.0.2 www.fairchildsemi.com 8 MOC211M, MOC212M, MOC213M — Small Ouline Optocouplers Transistor Output Carrier Tape Specifications MOC211M, MOC212M, MOC213M — Small Ouline Optocouplers Transistor Output Reflow Profile Temperature (°C) TP 260 240 TL 220 200 180 160 140 120 100 80 60 40 20 0 Max. Ramp-up Rate = 3°C/S Max. Ramp-down Rate = 6°C/S tP Tsmax tL Preheat Area Tsmin ts 120 240 360 Time 25°C to Peak Time (seconds) Profile Freature Pb-Free Assembly Profile Temperature Minimum (Tsmin) 150°C Temperature Maximum (Tsmax) 200°C Time (tS) from (Tsmin to Tsmax) 60–120 seconds Ramp-up Rate (tL to tP) 3°C/second maximum Liquidous Temperature (TL) 217°C Time (tL) Maintained Above (TL) 60–150 seconds Peak Body Package Temperature 260°C +0°C / –5°C Time (tP) within 5°C of 260°C 30 seconds Ramp-down Rate (TP to TL) 6°C/second maximum Time 25°C to Peak Temperature ©2005 Fairchild Semiconductor Corporation MOC211M, MOC212M, MOC213M Rev. 1.0.2 8 minutes maximum www.fairchildsemi.com 9 MOC211M, MOC212M, MOC213M — Small Ouline Optocouplers Transistor Output ©2005 Fairchild Semiconductor Corporation MOC211M, MOC212M, MOC213M Rev. 1.0.2 www.fairchildsemi.com 10