Document Number: MRF21045 Rev. 12, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF21045LR3 MRF21045LSR3 Designed for W--CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N -- P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2--carrier W--CDMA Performance for VDD = 28 Volts, IDQ = 500 mA, f = 2157.5 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels measured over 3.84 MHz Bandwidth at f1 --5 MHz and f2 +5 MHz, Distortion Products measured over a 3.84 MHz Bandwidth at f1 --10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF. Output Power — 10 Watts Avg. Efficiency — 23.5% Gain — 15 dB IM3 — --37.5 dBc ACPR — --41 dBc • Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 45 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large--Signal Impedance Parameters • Low Gold Plating Thickness on Leads, 40µ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel. NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN N--Channel Enhancement--Mode Lateral MOSFETs 2110--2170 MHz, 45 W, 28 V LATERAL N--CHANNEL RF POWER MOSFETs CASE 465E--04, STYLE 1 NI--400 MRF21045LR3 CASE 465F--04, STYLE 1 NI--400S MRF21045LSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 105 0.60 W W/°C Storage Temperature Range Tstg --65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1) Unit RθJC 1.65 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 1 (Minimum) M2 (Minimum) 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor MRF21045LR3 MRF21045LSR3 1 Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 µAdc) VGS(th) 2 — 4 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 500 mAdc) VGS(Q) 3 3.9 5 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) — 0.19 0.21 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 1 Adc) gfs — 3 — S Crss — 1.8 — pF NOT RECOMMENDED FOR NEW DESIGN Drain--Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 µAdc) On Characteristics (DC) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Functional Tests (In Freescale Test Fixture, 50 ohm system) 2--carrier W--CDMA. Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF. Common--Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2157.5 MHz, f2 = 2167.5 MHz) Gps 13.5 15 — dB Drain Efficiency (VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2157.5 MHz, f2 = 2167.5 MHz) η 21 23.5 — % IM3 — --37.5 --35 dBc ACPR — --41 --38 dBc IRL — --12 --9 dB Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured over 3.84 MHz Bandwidth at f1 --10 MHz and f2 +10 MHz.) Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured over 3.84 MHz Bandwidth at f1 --5 MHz and f2 +5 MHz.) Input Return Loss (VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2157.5 MHz, f2 = 2167.5 MHz) 1. Part is internally matched both on input and output. (continued) MRF21045LR3 MRF21045LSR3 2 RF Device Data Freescale Semiconductor NOT RECOMMENDED FOR NEW DESIGN Off Characteristics Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Two--Tone Common--Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Gps — 14.9 — dB Two--Tone Drain Efficiency (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) η — 36 — % Intermodulation Distortion (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) IMD — --30 — dBc Two--Tone Input Return Loss (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) IRL — --12 — dB P1dB — 50 — W Pout, 1 dB Compression Point (VDD = 28 Vdc, IDQ = 500 mA, f = 2170 MHz) NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Functional Tests (In Freescale Test Fixture, 50 ohm system) — continued MRF21045LR3 MRF21045LSR3 RF Device Data Freescale Semiconductor 3 VBIAS R3 R1 R4 B1 NOT RECOMMENDED FOR NEW DESIGN R2 C5 C4 C3 C7 C2 Z1 Z2 Z3 Z4 C1 Z1, Z9 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z10 + C8 C9 C10 VSUPPLY C11 Z10 Z5 RF INPUT L1 + Z6 Z7 Z8 RF OUTPUT C6 DUT 0.750″ x 0.084″ Transmission Line 0.160″ x 0.084″ Transmission Line 1.195″ x 0.176″ Transmission Line 0.125″ x 0.320″ Transmission Line 1.100″ x 0.045″ Transmission Line 0.442″ x 0.650″ Transmission Line 0.490″ x 0.140″ Transmission Line 0.540″ x 0.084″ Transmission Line 0.825″ x 0.055″ Transmission Line Z9 0.030″ Glass Teflon, Keene GX--0300--55--22, εr = 2.55 Etched Circuit Boards MRF21045 Rev. 3, CMR Board PCB Figure 1. MRF21045LR3(SR3) Test Circuit Schematic Table 5. MRF21045LR3(SR3) Component Designations and Values Designators Description B1 Short Ferrite Bead, Fair Rite, #2743019447 C1, C2, C6 43 pF Chip Capacitors, ATC #100B430JCA500X C7 5.6 pF Chip Capacitor, ATC #100B5R6JCA500X C3, C9 1000 pF Chip Capacitors, ATC #100B102JCA500X C4, C10 0.1 F Chip Capacitors, Kemet #CDR33BX104AKWS C5 1.0 F Tantalum Chip Capacitor, Kemet #T491C105M050 C8 10 F Tantalum Chip Capacitor, Kemet #T495X106K035AS4394 C11 22 F Tantalum Chip Capacitor, Kemet #T491X226K035AS4394 L1 1 Turn, #20 AWG, 0.100″ ID N1, N2 Type N Flange Mounts, Omni Spectra #3052--1648--10 R1 1.0 kΩ, 1/8 W Chip Resistor R2 180 kΩ, 1/8 W Chip Resistor R3, R4 10 Ω, 1/8 W Chip Resistors MRF21045LR3 MRF21045LSR3 4 RF Device Data Freescale Semiconductor NOT RECOMMENDED FOR NEW DESIGN + C8 C7 R1 B1 R3 C2 L1 C10 R4 C9 C5 C4 C3 C11 C1 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN R2 C6 WB1 WB2 MRF21045 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF21045LR3(SR3) Test Circuit Component Layout MRF21045LR3 MRF21045LSR3 RF Device Data Freescale Semiconductor 5 15 --40 η 10 5 --45 --50 IM3 ACPR 0 --55 1 0.5 10 25 --45 3rd Order 20 --50 5th Order 15 --55 VDD = 28 Vdc, IDQ = 500 mA f1 = 2135 MHz, f2 = 2145 MHz η --60 7th Order --65 4 10 5 6 8 10 30 50 60 Figure 3. 2-Carrier W-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power Figure 4. Intermodulation Distortion Products versus Output Power 600 mA 400 mA VDD = 28 Vdc f1 = 2135 MHz f2 = 2145 MHz 500 mA --50 4 6 8 10 30 50 60 28 --10 26 IRL --15 24 η --20 22 --25 VDD = 28 Vdc, Pout = 10 W (Avg.), IDQ = 500 mA 2--Carrier W--CDMA, 10 MHz Carrier Spacing 3.84 MHz Channel Bandwidth Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF) 20 --30 18 IM3 --35 16 ACPR --40 14 Gps --45 2090 2110 2130 2150 2170 Pout, OUTPUT POWER (WATTS) PEP f, FREQUENCY (MHz) Figure 5. Intermodulation Distortion versus Output Power Figure 6. 2--Carrier W--CDMA Broadband Performance 15.5 60 50 14.5 40 14 30 13.5 20 η VDD = 28 Vdc IDQ = 500 mA f = 2170 MHz 13 8 10 Pout, OUTPUT POWER (WATTS) Figure 7. CW Performance 30 --26 IMD 39 --27 38 --28 37 --29 36 --30 IDQ = 500 mA Pout = 45 W (PEP) f1 = 2135 MHz, f2 = 2145 MHz 35 0 6 50 60 --25 40 10 12.5 4 --24 η 41 η, DRAIN EFFICIENCY (%) η, DRAIN EFFICIENCY (%) 15 2190 42 Gps G ps , POWER GAIN (dB) 30 Pout, OUTPUT POWER (WATTS) PEP 700 mA 2 --40 Pout, OUTPUT POWER (WATTS Avg.) W--CDMA IDQ = 300 mA --45 35 3 --30 --40 --35 20 --25 --35 40 --31 34 --32 24 25 26 27 28 29 VDD, DRAIN SUPPLY (V) Figure 8. Two--Tone Intermodulation Distortion and Drain Efficiency versus Drain Supply MRF21045LR3 MRF21045LSR3 6 NOT RECOMMENDED FOR NEW DESIGN Gps --30 η, DRAIN EFFICIENCY (%) --35 45 IM3 (dBc), ACPR (dBc), IRL, INPUT RETURN LOSS (dB) 20 --30 IM3 (dBc), ACPR (dBc) 25 --25 RF Device Data Freescale Semiconductor IMD, INTERMODULATION DISTORTION (dBc) --25 VDD = 28 Vdc, IDQ = 500 mA f1 = 2135 MHz, f2 = 2145 MHz 3.84 MHz Channel Bandwidth Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF) IMD, INTERMODULATION DISTORTION (dBc) 30 η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) NOT RECOMMENDED FOR NEW DESIGN η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) TYPICAL CHARACTERISTICS IDQ = 700 mA 500 mA --15 η 30 600 mA --20 VDD = 28 Vdc Pout = 45 W (PEP) IDQ = 500 mA f1 = f -- 5 MHz, f2 = f + 5 MHz 25 --25 20 400 mA 14.5 VDD = 28 Vdc f1 = 2135 MHz f2 = 2145 MHz 300 mA --30 IMD 15 14 --35 Gps 10 4 6 8 10 30 50 60 2090 2110 2130 2150 --40 2190 2170 Pout, OUTPUT POWER (WATTS) PEP f, FREQUENCY (MHz) Figure 9. Two-Tone Power Gain versus Output Power Figure 10. Two-Tone Broadband Performance W--CDMA TEST SIGNAL --25 +20 --30 3.84 MHz Channel BW +30 3rd Order 0 VDD = 28 Vdc Pout = 45 W (PEP) IDQ = 500 mA f1 = 2140 MHz -- ∆f/2, f2 = 2140 MHz + ∆f/2 --35 --40 --10 (dB) IMD, INTERMODULATION DISTORTION (dBc) NOT RECOMMENDED FOR NEW DESIGN IRL 35 15.5 15 --10 NOT RECOMMENDED FOR NEW DESIGN 40 G ps , POWER GAIN (dB),η, DRAIN EFFICIENCY (%) G ps , POWER GAIN (dB) 16 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS 5th Order --20 --30 --40 --45 --50 7th Order --50 --55 0.1 --70 --ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW --IM3 in 3.84 MHz BW --80 --25 --20 --60 1 ∆f, TONE SEPARATION (MHz) 10 30 --15 --10 --5 0 5 10 +IM3 in 3.84 MHz BW 15 20 25 f, FREQUENCY (MHz) Figure 11. Intermodulation Distortion Products versus Two--Tone Spacing Figure 12. 2-Carrier W-CDMA Spectrum MRF21045LR3 MRF21045LSR3 RF Device Data Freescale Semiconductor 7 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN f = 2110 MHz f = 2170 MHz Zload Zsource f = 2110 MHz f = 2170 MHz Zo = 25 Ω VDD = 28 Vdc, IDQ = 500 mA, Pout = 10 W Avg. f MHz Zsource Ω Zload Ω 2110 18.88 -- j8.86 3.11 -- j4.18 2140 19.80 -- j9.93 3.09 -- j3.87 2170 19.68 -- j10.44 3.12 -- j3.72 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 13. Series Equivalent Source and Load Impedance MRF21045LR3 MRF21045LSR3 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS bbb Q M T B M A M NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. INFORMATION ONLY: CORNER BREAK (4X) TO BE .060±.005 (1.52±0.13) RADIUS OR .06±.005 (1.52±0.13) x 45° CHAMFER. B SEE NOTE 4 NOT RECOMMENDED FOR NEW DESIGN 1 3 2X K B 2 2X D bbb M T A M B M N (LID) ccc M T A B M ccc M T A M B M M R (LID) C E aaa M T A M B M T M (INSULATOR) A F S (INSULATOR) SEATING PLANE aaa M T A M H B M DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX .795 .805 .380 .390 .125 .163 .275 .285 .035 .045 .004 .006 .600 BSC .057 .067 .092 .122 .395 .405 .395 .405 .120 .130 .395 .405 .395 .405 .005 BSC .010 BSC .015 BSC NOT RECOMMENDED FOR NEW DESIGN 2X G MILLIMETERS MIN MAX 20.19 20.44 9.65 9.9 3.17 4.14 6.98 7.24 0.89 1.14 0.10 0.15 15.24 BSC 1.45 1.7 2.33 3.1 10 10.3 10 10.3 3.05 3.3 10 10.3 10 10.3 0.127 BSC 0.254 BSC 0.381 BSC STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE A CASE 465E--04 ISSUE F NI--400 MRF21045LR3 2X D bbb M T A M B NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M--1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. M 1 2 2X K ccc M T A M N E B R M (LID) ccc (LID) C M T A M B M M B M F 3 A T A SEATING PLANE H S M aaa M T A M (INSULATOR) B M (INSULATOR) aaa (FLANGE) B M T A B (FLANGE) DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX .395 .405 .395 .405 .125 .163 .275 .285 .035 .045 .004 .006 .057 .067 .092 .122 .395 .405 .395 .405 .395 .405 .395 .405 .005 REF .010 REF .015 REF MILLIMETERS MIN MAX 10.03 10.29 10.03 10.29 3.18 4.14 6.98 7.24 0.89 1.14 0.10 0.15 1.45 1.70 2.34 3.10 10.03 10.29 10.03 10.29 10.03 10.29 10.03 10.29 0.127 REF 0.254 REF 0.38 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465F--04 ISSUE E NI--400S MRF21045LSR3 MRF21045LR3 MRF21045LSR3 RF Device Data Freescale Semiconductor 9 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 12 Oct. 2008 Description • Data sheet revised to reflect part status change, p. 1, including use of applicable overlay. • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN12779, p. 1, 2 • Added Product Documentation and Revision History, p. 10 MRF21045LR3 MRF21045LSR3 10 RF Device Data Freescale Semiconductor NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. Freescale Semiconductor, Inc. 2008. All rights reserved. MRF21045LR3 MRF21045LSR3 Document Number: RF Device Data MRF21045 Rev. 12, 10/2008 Freescale Semiconductor 11 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN How to Reach Us: