Freescale Semiconductor Technical Data Document Number: MRF9060 - 2 Rev. 11, 9/2008 RF Power Field Effect Transistor MRF9060LR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. • Typical Two - Tone Performance at 945 MHz, 26 Volts Output Power — 60 Watts PEP Power Gain — 17 dB Efficiency — 40% IMD — - 31 dBc • Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power Features • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. 945 MHz, 60 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET CASE 360B - 05, STYLE 1 NI - 360 Table 1. Maximum Ratings Symbol Value Unit Drain- Source Voltage Rating VDSS - 0.5, +65 Vdc Gate- Source Voltage VGS - 0.5, + 15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 159 0.91 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1) Unit RθJC 1.1 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 1 (Minimum) M1 (Minimum) 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. © Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN N - Channel Enhancement - Mode Lateral MOSFET MRF9060LR1 1 Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 μAdc) VGS(th) 2 2.9 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 450 mAdc) VGS(Q) — 3.7 — Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 1.3 Adc) VDS(on) — 0.17 0.4 Vdc gfs — 5.3 — S Input Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss — 98 — pF Output Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 50 — pF Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2 — pF On Characteristics Forward Transconductance (VDS = 10 Vdc, ID = 4 Adc) Dynamic Characteristics NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Off Characteristics (continued) MRF9060LR1 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Gps 16 17 — dB Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) η 36 40 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IMD — - 31 - 28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IRL — - 16 -9 dB Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Gps — 17 — dB Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) η — 39 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IMD — - 31 — dBc Input Return Loss (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IRL — - 16 — dB Power Output, 1 dB Compression Point (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 450 mA, f1 = 945.0 MHz) P1dB — 70 — W Common- Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 450 mA, f1 = 945.0 MHz) Gps — 17 — dB Drain Efficiency (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 450 mA, f1 = 945.0 MHz) η — 51 — % NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Functional Tests (In Freescale Test Fixture, 50 ohm system) MRF9060LR1 RF Device Data Freescale Semiconductor 3 B1 B2 + + C6 C7 L1 L2 NOT RECOMMENDED FOR NEW DESIGN C4 RF INPUT Z2 Z3 C1 Z4 Z5 Z6 C2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z7 C3 Z8 VDD + + C15 C16 C17 C9 Z10 Z1 C13 Z11 Z12 Z13 Z14 Z15 Z16 C10 C11 C12 Z17 RF OUTPUT Z9 C5 0.240″ x 0.060″ Microstrip 0.240″ x 0.060″ Microstrip 0.500″ x 0.100″ Microstrip 0.180″ x 0.270″ Microstrip 0.350″ x 0.270″ Microstrip 0.270″ x 0.520 x 0.140″ Taper 0.170″ x 0.520″ Microstrip 0.410″ x 0.520″ Microstrip 0.060″ x 0.520″ Microstrip DUT Z10 Z11 Z12 Z13 Z14 Z15 Z16 Z17 PCB C14 C8 0.360″ x 0.270″ Microstrip 0.060″ x 0.270″ Microstrip 0.110″ x 0.060″ Microstrip 0.330″ x 0.060″ Microstrip 0.230″ x 0.060″ Microstrip 0.740″ x 0.060″ Microstrip 0.130″ x 0.060″ Microstrip 0.340″ x 0.060″ Microstrip Taconic RF - 35- 0300, 30 mil, εr = 3.55 Figure 1. 945 MHz Broadband Test Circuit Schematic Table 5. 945 MHz Broadband Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Short Ferrite Bead 2743019447 Fair- Rite B2 Long Ferrite Bead 2743029446 Fair- Rite C1, C7, C13, C14 47 pF Chip Capacitors ATC100B470JT500XT ATC C2, C3, C11 0.8- 8.0 Gigatrim Variable Capacitors 27291SL Johanson C4, C5, C8, C9 10 pF Chip Capacitors ATC100B100JT500XT ATC C6, C15, C16 10 mF, 35 V Tantalum Chip Capacitor T491D106K035AT Kemet C10 3.0 pF Chip Capacitor ATC100B3R0JT500XT ATC C12 0.5 pF Chip Capacitor (MRF9060) 0.7 pF Chip Capacitor (MRF9060S) ATC100B0R5BT500XT ATC100B0R7BT500XT ATC ATC C17 220 mF Electrolytic Chip Capacitor MCAX63V227M13X22 Multicomp L1, L2 12.5 nH Inductors A04T- 5 Coilcraft NOT RECOMMENDED FOR NEW DESIGN VGG MRF9060LR1 4 RF Device Data Freescale Semiconductor C6 VGG C17 VDD B1 B2 L1 INPUT C1 C2 C4 L2 WB1 C3 C5 C15 C16 WB2 C8 C9 C14 C10 C11 OUTPUT C12 MRF9060 900 MHz Rev−02 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 930 - 960 MHz Broadband Test Circuit Component Layout NOT RECOMMENDED FOR NEW DESIGN C13 CUT OUT AREA NOT RECOMMENDED FOR NEW DESIGN C7 MRF9060LR1 RF Device Data Freescale Semiconductor 5 45 16 h 40 VDD = 26 Vdc Pout = 60 W (PEP) IDQ = 450 mA 15 14 IMD 13 35 −30 −32 Two−Tone Measurement, 100 kHz Tone Spacing 12 −34 IRL −36 11 10 930 935 940 945 950 f, FREQUENCY (MHz) −38 960 955 −10 −12 −14 −16 −18 IDQ = 650 mA G ps , POWER GAIN (dB) 17.5 500 mA 17 16.5 450 mA 16 275 mA VDD = 26 Vdc f1 = 945 MHz f2 = 945.1 MHz 15.5 15 1 −25 −30 IDQ = 275 mA −35 −40 −45 500 mA 450 mA −50 650 mA VDD = 26 Vdc f1 = 945 MHz f2 = 945.1 MHz −55 −60 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 4. Power Gain versus Output Power 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 Figure 5. Intermodulation Distortion versus Output Power 0 60 20 VDD = 26 Vdc IDQ = 450 mA f1 = 945 MHz f2 = 945.1 MHz −10 −20 −30 3rd Order −40 −50 5th Order −60 1 10 Pout, OUTPUT POWER (WATTS) PEP 50 40 16 h 14 100 Figure 6. Intermodulation Distortion Products versus Output Power 30 20 12 VDD = 26 Vdc IDQ = 450 mA f = 945 MHz 10 7th Order −70 0.1 Gps 18 Gps, POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) −20 8 10 10 100 h, DRAIN EFFICIENCY (%) 18 IMD, INTERMODULATION DISTORTION (dBc) Figure 3. Class AB Broadband Circuit Performance NOT RECOMMENDED FOR NEW DESIGN Gps IRL, INPUT RETURN LOSS (dB) G ps , POWER GAIN (dB) NOT RECOMMENDED FOR NEW DESIGN 17 IMD, INTERMODULATION DISTORTION (dBc) 50 18 h , DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS 0 Pout, OUTPUT POWER (WATTS) AVG. Figure 7. Power Gain and Efficiency versus Output Power MRF9060LR1 6 RF Device Data Freescale Semiconductor 60 Gps NOT RECOMMENDED FOR NEW DESIGN Gps, POWER GAIN (dB) 16 40 14 VDD = 26 Vdc IDQ = 450 mA f1 = 945 MHz f2 = 945.1 MHz h 12 6 0 −20 10 8 20 −40 IMD 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 8. Power Gain, Efficiency, and IMD versus Output Power −60 NOT RECOMMENDED FOR NEW DESIGN 18 h, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS MRF9060LR1 RF Device Data Freescale Semiconductor 7 Zsource Zload f = 930 MHz f = 960 MHz f = 960 MHz f = 930 MHz VDD = 26 V, IDQ = 450 mA, Pout = 60 W PEP f MHz Zload Ω Zsource Ω 930 0.80 - j0.10 2.08 - j0.65 945 0.80 - j0.05 2.07 - j0.38 960 0.81 - j0.10 2.04 - j0.37 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Zo = 5 Ω Figure 9. Series Equivalent Source and Load Impedance MRF9060LR1 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B M T A M B M NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. NOT RECOMMENDED FOR NEW DESIGN 1 3 B (FLANGE) 2 D bbb M T A K 2X 2X M B R M (LID) ccc N (LID) ccc M T A M B M T A M B M F H M C E S (INSULATOR) T M (INSULATOR) A A aaa SEATING PLANE bbb M T A M B M T A M B M DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 0.795 0.805 0.225 0.235 0.125 0.175 0.210 0.220 0.055 0.065 0.004 0.006 0.562 BSC 0.077 0.087 0.220 0.250 0.355 0.365 0.357 0.363 0.125 0.135 0.227 0.233 0.225 0.235 0.005 REF 0.010 REF 0.015 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE M CASE 360B - 05 ISSUE G NI - 360 MRF9060LR1 MILLIMETERS MIN MAX 20.19 20.45 5.72 5.97 3.18 4.45 5.33 5.59 1.40 1.65 0.10 0.15 14.28 BSC 1.96 2.21 5.59 6.35 9.02 9.27 9.07 9.22 3.18 3.43 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF NOT RECOMMENDED FOR NEW DESIGN Q aaa 2X G MRF9060LR1 RF Device Data Freescale Semiconductor 9 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 11 Sept. 2008 Description • Data sheet revised to reflect part status change, p. 1, including use of applicable overlay. • Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part numbers, p. 4 • Added Product Documentation and Revision History, p. 10 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers MRF9060LR1 10 RF Device Data Freescale Semiconductor Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008. All rights reserved. NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN How to Reach Us: MRF9060LR1 Document Number: RF Device Data MRF9060 - 2 Rev. 11, 9/2008 Freescale Semiconductor 11