FUJITSU MICROELECTRONICS DATA SHEET DS05-13108-4E Memory FRAM CMOS 2 M Bit (128 K × 16) MB85R2002 ■ DESCRIPTIONS The MB85R2002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies. The MB85R2002 is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R2002 can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. The MB85R2002 uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM. ■ FEATURES • • • • • • • Bit configuration Read/write endurance Operating power supply voltage Operating temperature range Data retention LB and UB data byte control Package : 131,072 words × 16 bits : 1010 times/bit : 3.0 V to 3.6 V : −40 °C to +85 °C : 10 years (+55 °C) : 48-pin plastic TSOP (1) Copyright©2007-2009 FUJITSU MICROELECTRONICS LIMITED All rights reserved 2009.8 MB85R2002 ■ PIN ASSIGNMENT (TOP VIEW) A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE CE2 GND UB LB VCC NC A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 NC GND I/O16 I/O8 I/O15 I/O7 I/O14 I/O6 I/O13 I/O5 VCC I/O12 I/O4 I/O11 I/O3 I/O10 I/O2 I/O9 I/O1 OE GND CE1 A0 (FPT-48P-M25) ■ PIN DESCRIPTION Pin name A0 to A16 I/O1 to I/O16 Address Input Data Input/Output CE1 Chip Enable 1 Input CE2 Chip Enable 2 Input WE Write Enable Input OE Output Enable Input LB, UB VCC GND NC 2 Function Data Byte Control Input Power Supply Ground No Connection DS05-13108-4E MB85R2002 ■ BLOCK DIAGRAM to · · · Address Latch. A0 Ferro Capacitor Cell Row Dec. A16 Column Dec. intCE2 S/A intCE2 CE2 intCEB intOE intWE intCE2 I/O1 to I/O8 I/O9 to I/O16 LB I/O16 UB · · WE I/O9 OE CE1 to intCEB I/O8 · · to I/O1 DS05-13108-4E 3 MB85R2002 ■ FUNCTION TRUTH TABLE Mode Standby Pre-charge Read Read (Pseudo-SRAM, OE control*1) Write Write (Pseudo-SRAM, WE control*2) CE1 CE2 WE OE LB UB H X X X X X X L X X X X X X H H X X X X X X H H L H L L H H L L H H L H L X H I/O1 to I/O8 I/O9 to I/O16 High-Z High-Z L Dout Dout L H Dout High-Z H L High-Z Dout L L Dout Dout L H Dout High-Z H L High-Z Dout L L Din Din L H Din High-Z H L High-Z Din L L Din Din L H Din High-Z H L High-Z Din Supply Current Standby (ISB) Operation (ICC) L = VIL, H = VIH, X can be either VIL or VIH, High-Z = High Impedance : Latch address and latch data at falling edge, : Latch address and latch data at rising edge *1 : OE control of the Pseudo-SRAM means the valid address at the falling edge of OE to read. *2 : WE control of the Pseudo-SRAM means the valid address and data at the falling edge of WE to write. 4 DS05-13108-4E MB85R2002 ■ ABSOLUTE MAXIMUM RATINGS Parameter Symbol Rating Min Max Unit Supply Voltage* VCC −0.5 +4.0 V Input Voltage* VIN −0.5 VCC + 0.5 V VOUT −0.5 VCC + 0.5 V Ambient Operating Temperature TA −40 +85 o C Storage Temperature Tstg −40 +125 o C Output Voltage* * : All voltages are referenced to GND = 0 V. WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings. ■ RECOMMENDED OPERATING CONDITIONS Parameter Symbol Value Min Typ Max Unit Supply Voltage* VCC 3.0 3.3 3.6 V Input Voltage (high)* VIH VCC × 0.8 ⎯ VCC + 0.5 V Input Voltage (low)* VIL −0.5 ⎯ +0.6 V Ambient Operating Temperature TA − 40 ⎯ +85 o C * : All voltages are referenced to GND = 0 V. WARNING: The recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. All of the device's electrical characteristics are warranted when the device is operated within these ranges. Always use semiconductor devices within their recommended operating condition ranges. Operation outside these ranges may adversely affect reliability and could result in device failure. No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their representatives beforehand. DS05-13108-4E 5 MB85R2002 ■ ELECTRICAL CHARACTERISTICS 1. DC CHARACTERISTICS (within recommended operating conditions) Value Parameter Symbol Conditions Unit Min Typ Max Input Leakage Current |ILI| VIN = 0 V to VCC ⎯ ⎯ 10 μA Output Leakage Current |ILO| VOUT = 0 V to VCC, CE1 = VIH or OE = VIH ⎯ ⎯ 10 μA 1 Supply Current ICC CE1 = 0.2 V, CE2 = VCC − 0.2 V, IOUT = 0 mA* ⎯ 10 15 mA CE1 ≥ VCC − 0.2 V CE2 ≤ 0.2 V*2 ⎯ 10 50 μA Standby Current ISB OE ≥ VCC − 0.2 V, WE ≥ VCC − 0.2 V*2 LB ≥ VCC − 0.2 V, UB ≥ VCC − 0.2 V*2 Output Voltage (high) VOH IOH = − 2.0 mA VCC × 0.8 ⎯ ⎯ V Output Voltage (low) VOL IOL = 2.0 mA ⎯ ⎯ 0.4 V *1 : During the measurement of ICC , the Address, Data In were taken to only change once per active cycle. IOUT : output current *2 : All pins other than setting pins should be input at the CMOS level voltages such as H ≥ VCC − 0.2 V, L ≤ 0.2 V. 2. AC CHARACTERISTICS • AC TEST CONDITIONS Supply Voltage : 3.0 V to 3.6 V Operating Temperature : −40 °C to +85 °C Input Voltage Amplitude : 0.3 V to 2.7 V Input Rising Time : 5 ns Input Falling Time : 5 ns Input Evaluation Level : 2.0 V / 0.8 V Output Evaluation Level : 2.0 V / 0.8 V Output Impedance : 50 pF (1) Read Operation (within recommended operating conditions) Parameter Read Cycle time CE1 Active Time CE2 Active Time OE Active Time LB, UB Active Time Pre-charge Time Address Setup Time Address Hold Time OE Setup Time LB, UB Setup Time Output Data Hold time Output Set Time CE1 Access Time CE2 Access Time OE Access Time Output Floating Time 6 Symbol tRC tCA1 tCA2 tRP tBP tPC tAS tAH tES tBS tOH tLZ tCE1 tCE2 tOE tOHZ Value Min 150 120 120 120 120 20 5 50 5 5 0 30 ⎯ ⎯ ⎯ ⎯ Max ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 100 100 100 20 Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns DS05-13108-4E MB85R2002 (2) Write Operation (within recommended operating conditions) Parameter Symbol Value Min Max Unit Write Cycle Time tWC 150 ⎯ ns CE1 Active Time tCA1 120 ⎯ ns CE2 Active Time tCA2 120 ⎯ ns LB, UB Active Time tBP 120 ⎯ ns Pre-Charge Time tPC 20 ⎯ ns Address Setup Time tAS 5 ⎯ ns Address Hold Time tAH 50 ⎯ ns LB, UB Setup Time tBS 5 ⎯ ns Write Pulse Width tWP 120 ⎯ ns Data Setup Time tDS 0 ⎯ ns Data Hold Time tDH 50 ⎯ ns Write Setup Time tWS 5 ⎯ ns 3. Pin Capacitance Parameter Input Capacitance Output Capacitance DS05-13108-4E Symbol CIN COUT Condition VIN = VOUT = GND f = 1 MHz, TA = +25 oC Value Unit Min Typ Max ⎯ ⎯ 10 pF ⎯ ⎯ 10 pF 7 MB85R2002 ■ TIMING DIAGRAMS 1. Read Cycle Timing (CE1, CE2 Control) tRC tCA1 CE1 tPC CE2 tCA2 tBP tBS LB, UB tAS A0 to A16 tAH Valid H or L tES tRP OE tCE1, tCE2 tOHZ tOH High-Z tLZ I/O1 to I/O16 Valid Invalid Invalid 2. Read Cycle Timing (OE Control) tCA1 CE1 tCA2 CE2 tBP tBS LB, UB tAS A0 to A16 tAH Valid H or L tRC OE tPC tRP tOHZ tOE tOH tLZ I/O1 to I/O16 Invalid 8 High-Z Valid Invalid DS05-13108-4E MB85R2002 3. Write Cycle Timing (CE1, CE2 Control) tWC tCA1 CE1 CE2 tPC tCA2 tBP tBS LB, UB tAH tAS A0 to A16 Valid H or L tWS tWP WE tDS tDH High-Z Valid Data In H or L 4. Write Cycle Timing (WE Control) tCA1 CE1 tCA2 CE2 tBP tBS LB, UB tAS A0 to A16 tAH Valid H or L tWC tWP tPC WE tDS tDH High-Z Data In DS05-13108-4E Valid H or L 9 MB85R2002 ■ POWER ON/OFF SEQUENCE tpd tr tpu VCC VCC CE2 CE2 3.0 V 3.0 V VIH (Min) VIH (Min) 1.0 V 1.0 V VIL (Max) VIL (Max) CE2 ≤ 0.2 V GND GND CE1 > VCC × 0.8* CE1 > VCC × 0.8* CE1 : Don't Care CE1 CE1 * : CE1 (Max) < VCC + 0.5 V Notes: • Use either of CE1 or CE2, or both for disenable control of the device. • Because turning the power on from an intermediate level may cause malfunctions, when the power is turned on, VCC is required to be started from 0 V. • If the device does not operate within the specified conditions of read cycle, write cycle, power on/off sequence, memory data can not be guaranteed. (within recommended operating conditions) Parameter Symbol Value Min Typ Max Unit CE1 LEVEL hold time for Power OFF tpd 85 ⎯ ⎯ ns CE1 LEVEL hold time for Power ON tpu 85 ⎯ ⎯ ns Power supply rising time tr 0.05 ⎯ 200 ms ■ NOTES ON USE After the IR reflow completed, it is not guaranteed to save the data written prior to the IR reflow. ■ ORDERING INFOMATION Part number MB85R2002PFTN-GE1 10 Package 48-pin plastic TSOP(1) (FPT-48P-M25) DS05-13108-4E MB85R2002 ■ PACKAGE DIMENSIONS 48-pin plastic TSOP(1) Lead pitch 0.50 mm Package width × package length 12.00 × 12.40 mm Lead shape Gullwing Sealing method Plastic mold Mounting height 1.20 mm MAX Weight 0.37 g Code (Reference) P-TSOP(1)48-12×12.4-0.50 (FPT-48P-M25) 48-pin plastic TSOP(1) (FPT-48P-M25) Note 1) *1 : Resin protrusion. (Each side : +0.15 (.006) Max). Note 2) *2 : These dimensions do not include resin protrusion. Note 3) Pins width and pins thickness include plating thickness. Note 4) Pins width do not include tie bar cutting remainder. 0.10±0.05 (Stand off) (.004±.002) LEAD No. 1 48 0.50(.020) INDEX +0.05 0.22 –0.04 +.002 .009 –.002 *1 12.00±0.10 0.10(.004) M (.472±.004) 24 25 1.13±0.07 (Mounting height) (.044±.003) 14.00±0.20(.551±.008) Details of "A" part *2 12.40±0.10(.488±.004) "A" 0°~8° +0.05 0.08(.003) C 0.145 –0.03 +.002 .006 –.001 2003-2009 FUJITSU MICROELECTRONICS LIMITED F48043S-c-2-3 0.25(.010) 0.60±0.15 (.024±.006) Dimensions in mm (inches). Note: The values in parentheses are reference values Please confirm the latest Package dimension by following URL. http://edevice.fujitsu.com/package/en-search/ DS05-13108-4E 11 MB85R2002 FUJITSU MICROELECTRONICS LIMITED Shinjuku Dai-Ichi Seimei Bldg., 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0722, Japan Tel: +81-3-5322-3329 http://jp.fujitsu.com/fml/en/ For further information please contact: North and South America FUJITSU MICROELECTRONICS AMERICA, INC. 1250 E. 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