PNP S I L I C O N TRANSISTOR Shantou Huashan Electronic Devices Co.,Ltd. HA1011 █ APPLICATIONS High Voltage switching，AF Power Amp. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation（Tc=25℃）…………………… 25W VCBO——Collector-Base Voltage………………………… -180V VCEO——Collector-Emitter Voltage……………………… -160V 1―Base，B 2―Collector，C 3―Emitter, E VEBO——Emitter-Base Voltage……………………………… -6V IC——Collector Current（DC）……………………………… -1.5A ICP——Collector Current（Pulse）……………………………-3A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage -180 V IC=-1mA, IE=0 BVCEO Collector-Emitter Breakdown Voltage -160 V IC=-1mA, IB=0 BVEBO Emitter-Base Breakdown Voltage -6 V IE=-1mA，IC=0 ICBO Collector Cutoff Current -10 μA VCB=-120V, IE=0 IEBO Emitter-Base Cutoff Current -10 μA VEB=-4V, IC=0 HFE DC Current Gain VCE(sat) 60 Collector- Emitter Saturation Voltage VCE=-5V, IC=-300mA 200 -0.5 -1.0 V IC=-500mA, IB=-50mA -1.5 V VCE=-5V,IC=-10A VCB=-10V, f=1MHz VBE Base- Emitter Voltage Cob Output Capacitance 30 pF Current Gain-Bandwidth Product 100 MHz fT ton tf tstg Turn-On Time 0.29 μS Fall Time 0.19 μS Storage Time 0.48 μS █ hFE Classification D 60—120 E 100—200 VCE=-10V,IC=-50mA See specified test circuit Shantou Huashan Electronic Devices Co.,Ltd. PNP S I L I C O N TRANSISTOR HA1011 Shantou Huashan Electronic Devices Co.,Ltd. PNP S I L I C O N TRANSISTOR HA1011