NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HC5039 █ APPLICATIONS high Voltage power switch switching Application. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 T stg ——Storage Temperature………………………… -65~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation（Tc=25℃）……………………………70W VCBO ——Collector-Base Voltage………………………………800V 1―Base，B 2―Collector，C 3―Emitter，E VCEO ——Collector-Emitter Voltage……………………………400V VE B O —— Emitter - Base Voltage………………………………7 V IC——Collector Current（DC）………………………………………5A ICP ——Collector Current（Pulse）……………………………………10A Ib——Base Current ………………………………………………3A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage ８００ Ｖ IC=1mA, IE=0 BVCEO Collector-Emitter Breakdown Voltage ４００ Ｖ IC=5mA, IB=0 BVEBO Emitter-Base Breakdown Voltage ７ Ｖ ICBO Collector Cut-off Current １０ IEBO Emitter Cut-off Current １０ HFE *DC Current Gain １０ VCE=5V, IC=0.3A VCE(sat) *Collector- Emitter Saturation Voltage １．５ Ｖ IC=2.5A, IB =0.5A VBE(sat) *Base-Emitter Saturation Voltage ２．０ Ｖ IC=2.5A, IB =0.5A Current Gain-Bandwidth Product １０ ＭＨｚ VCE=5V, IC=0.1A Cob Output Capacitance ４０ ｐＦ VCB=10V, f=1ＭＨｚ tON Turn On Time １ μＳ tSTG Storage ３ μＳ fT tF Time Fall Time *Pulse Test：PW≤300μｓ，Ｄｕｔｙ ｃｙｃｌｅ≤2% Pulse IE=1mA，IC=0 μＡ VCB=500V, IE=0 μＡ VEB=7V, IC=0 ０．８ μＳ Vcc=150V，Ic=2.5A， Ib1=-Ib2=0.5A，RL=60Ω NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HC5039 NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HC5039