HUASHAN HEB834

PNP SILICON TRANSISTOR
Shantou Huashan Electronic Devices Co.,Ltd.
HEB834
█　APPLICATIONS　Low Frequency Power Amplifier.
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
TO-220AB
T stg ——Storage Temperature………………………… －55~150℃
T j ——Junction Temperature……………………………… 150℃　PC——Collector Dissipation（T c=25℃）…………………… 30W
PC——Collector Dissipation（Ta=25℃）……………………1.5W
VCBO ——Collector-Base Voltage……………………………-60V
1―Base，B
VCEO——Collector-Emitter Voltage………………………… -60V
2―Collector，C
3―Emitter, E
VEBO ——Emitter-Base Voltage……………………………… -7V
IC——Collector Current……………………………………… -3A
Ib——Base Current………………………………………-0.5A
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol　Characteristics　Min　Typ　－６０　Collector Cut-off Current
Emitter Cut-off Current
HFE（1）　DC Current Gain　６０　HFE（2）　DC Current Gain　２０　VCE(sat)　Collector- Emitter Saturation Voltage　VBE(on)　Base-Emitter On Voltage　Max　Unit Test Conditions Ｖ　VCE=-5V, IC=-3A　－０．５　－１　Ｖ　IC=-3A, IB=-0.3A　－０．７　－１　Ｖ　VCE=-5V, IC=-0.5A　Current Gain-Bandwidth Product
９　Cob
Output Capacitance
１５０　tON
Turn-On Time
０．４　μＳ　tSTG
Storage Time
１．７　μＳ　Fall Time
０．５　μＳ　BVCEO
ICBO
Collector-Emitter Breakdown Voltage
IEBO
ft
tF
IC=-50mA, IB=0　－１００　μＡ　VCB=-60V, IE=0
－１００　μＡ　VEB=-7V, IC=0
２００　VCE=-5V, IC=-0.5A　ＭＨｚ　VCE=-5V, IC=-0.5A,
ｐＦ　VCB=-10V, IE=0，f=1ＭＨｚ
IB1 = -IB2 =-0.2A
VCC=-30V
█ hFE Classification
O
６０—１２０　Y
１００—２００　Shantou Huashan Electronic Devices Co.,Ltd.
HEB834