NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HC4242S █ APPLICATIONS high Voltage high-Speed Switching. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-220 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation(Tc=25℃)……………………………75W VCBO ——Collector-Base Voltage………………………………700V VCEO ——Collector-Emitter Voltage……………………………400V 1―Base,B 2―Collector,C 3―Emitter,E VE B O —— Emitter - Base Voltage………………………………9 V IC——Collector Current(DC)………………………………………4A IC——Collector Current(Pulse)……………………………………8A Ib——Base Current…………………………………………… 2mA █ ELECTRICAL CHARACTERISTICS(Ta=25℃) Symbol Characteristics Min Typ Max Unit 400 1.0 HFE(1) DC Current Gain 10 40 HFE(2) 8 40 VCE=5V, IC=2A VCE(sat1) Collector- Emitter Saturation Voltage 0.5 V IC=1A, IB =0.2A VCE(sat2) Collector- Emitter Saturation Voltage 0.6 V IC=2A, IB =0.5A VCE(sat3) Collector- Emitter Saturation Voltage 1 V IC=4A, IB =1A VBE(sat1) Base-Emitter Saturation Voltage 1.2 V IC=1A, IB =0.2A VBE(sat2) Base-Emitter Saturation Voltage 1.6 V IC=2A, IB =0.5A Output Capacitance 65 Current Gain-Bandwidth Product 4 tON Turn-On Time 0.8 μS tSTG Storage 4 μS 0.9 μS BVCEO IEBO Cob fT tR Collector-Emitter Breakdown Voltage Emitter Cut-off Current Time Rise Time V Test Conditions IC=10mA, IB=0 mA VEB=9V, IC=0 VCE=5V, IC=1A pF VCB=10V, IE=0,f=0.1MHz MHz VCE=10V, IC=0.5A Vcc=125V,IC=2A, IB1 = IB2 =0.4A █ hFE Classification H1 H2 H3 H4 H5 10—16 14—21 19—26 24—31 29—40 NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HC4242S