HUASHAN HC4242S

NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HC4242S
█ APPLICATIONS
high Voltage high-Speed Switching.
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
TO-220
T stg ——Storage Temperature………………………… -55~150℃
T j ——Junction Temperature…………………………………150℃
PC——Collector Dissipation(Tc=25℃)……………………………75W
VCBO ——Collector-Base Voltage………………………………700V
VCEO ——Collector-Emitter Voltage……………………………400V
1―Base,B
2―Collector,C
3―Emitter,E
VE B O —— Emitter - Base Voltage………………………………9 V
IC——Collector Current(DC)………………………………………4A
IC——Collector Current(Pulse)……………………………………8A
Ib——Base Current…………………………………………… 2mA
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol Characteristics Min Typ Max Unit 400 1.0 HFE(1) DC Current Gain 10 40 HFE(2)
8 40 VCE=5V, IC=2A
VCE(sat1) Collector- Emitter Saturation Voltage 0.5 V IC=1A, IB =0.2A VCE(sat2) Collector- Emitter Saturation Voltage 0.6 V IC=2A, IB =0.5A VCE(sat3) Collector- Emitter Saturation Voltage 1 V IC=4A, IB =1A VBE(sat1) Base-Emitter Saturation Voltage 1.2 V IC=1A, IB =0.2A VBE(sat2) Base-Emitter Saturation Voltage 1.6 V IC=2A, IB =0.5A Output Capacitance
65 Current Gain-Bandwidth Product
4 tON
Turn-On Time
0.8 μS tSTG
Storage
4 μS 0.9 μS BVCEO
IEBO
Cob
fT
tR
Collector-Emitter Breakdown Voltage
Emitter Cut-off Current
Time
Rise Time
V Test Conditions IC=10mA, IB=0 mA VEB=9V, IC=0
VCE=5V, IC=1A pF VCB=10V, IE=0,f=0.1MHz
MHz VCE=10V, IC=0.5A
Vcc=125V,IC=2A,
IB1 = IB2 =0.4A
█ hFE Classification
H1
H2
H3
H4
H5
10—16 14—21 19—26 24—31 29—40
NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HC4242S