MITSUBISHI FK10SM-10

MITSUBISHI Nch POWER MOSFET
FK10SM-10
HIGH-SPEED SWITCHING USE
FK10SM-10
OUTLINE DRAWING
Dimensions in mm
4.5
15.9MAX.
1.5
5.0
r
4
2
20.0
φ 3.2
2
19.5MIN.
4.4
1.0
q
w
5.45
e
5.45
0.6
2.8
4
wr
¡VDSS ................................................................................ 500V
¡rDS (ON) (MAX) .............................................................. 1.13Ω
¡ID ......................................................................................... 10A
¡Integrated Fast Recovery Diode (MAX.) ........150ns
q GATE
w DRAIN
e SOURCE
r DRAIN
q
e
TO-3P
APPLICATION
Servo motor drive, Robot, UPS, Inverter Fluorecent
lamp, etc.
MAXIMUM RATINGS
Symbol
VDSS
VGSS
ID
IDM
IS
ISM
PD
Tch
Tstg
—
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Source current
Conditions
VGS = 0V
VDS = 0V
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Typical value
Ratings
500
±30
10
Unit
V
V
A
30
10
30
125
–55 ~ +150
A
A
A
W
°C
–55 ~ +150
4.8
°C
g
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK10SM-10
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
(Tch = 25°C)
Symbol
Parameter
V (BR) DSS
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 500V, VGS = 0V
Gate-source threshold voltage
Drain-source on-state resistance
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
ID = 5A, VGS = 10V
ID = 5A, VDS = 10V
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Coss
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Crss
td (on)
tr
td (off)
tf
Turn-off delay time
Fall time
Source-drain voltage
VSD
Rth (ch-c)
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω
IS = 5A, VGS = 0V
Channel to case
Thermal resistance
Reverse recovery time
trr
Limits
Test conditions
IS = 10A, dis/dt = –100A/µs
Unit
Min.
Typ.
Max.
500
±30
—
—
—
—
—
—
±10
V
V
µA
—
2
—
—
—
3
0.88
4.40
1
4
1.13
5.65
mA
V
Ω
V
3.3
—
—
—
5.5
1100
130
20
—
—
—
—
S
pF
pF
pF
—
—
—
—
20
30
95
35
—
—
—
—
ns
ns
ns
ns
—
1.5
2.0
V
—
—
—
—
1.00
150
°C/W
ns
PERFORMANCE CURVES
MAXIMUM SAFE OPERATING AREA
5
3
2
DRAIN CURRENT ID (A)
POWER DISSIPATION PD (W)
POWER DISSIPATION DERATING CURVE
200
160
120
80
40
100
7
5
3
2
10–1
0
0
50
100
150
CASE TEMPERATURE TC (°C)
200
tw=10µs
101
7
5
3
2
100µs
1ms
10ms
TC = 25°C
Single Pulse
DC
7
5 0
10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK10SM-10
HIGH-SPEED SWITCHING USE
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 20V
10V
20
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 20V 10V 6V
PD = 125W
10
TC = 25°C
Pulse Test
12
8
5V
PD=
125W
4
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
6V
16
8
6
5V
4
TC = 25°C
Pulse Test
2
4V
0
0
10
20
30
40
0
50
16
20
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
2.0
32
ID = 20A
24
16
10A
8
5A
0
4
8
12
16
DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (Ω)
DRAIN-SOURCE ON-STATE
VOLTAGE VDS (ON) (V)
12
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
1.6
VGS = 10V
20V
1.2
0.8
0.4
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
TRANSFER CHARACTERISTICS
(TYPICAL)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
101
7
5
16
FORWARD TRANSFER
ADMITTANCE yfs (S)
TC = 25°C
VDS = 50V
Pulse Test
12
8
4
0
TC = 25°C
Pulse Test
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
20
20
DRAIN CURRENT ID (A)
8
DRAIN-SOURCE VOLTAGE VDS (V)
TC = 25°C
Pulse Test
0
4
DRAIN-SOURCE VOLTAGE VDS (V)
40
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE VGS (V)
VDS = 10V
Pulse Test
TC=25°C
75°C
3
2
125°C
100
7
5
3
2
10–1 –1
10
2 3
5 7 100
2 3
5 7 101
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK10SM-10
HIGH-SPEED SWITCHING USE
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
103
7
5
2
3
2
3
2
Crss
101 Tch = 25°C
7 f = 1MHz
5 VGS = 0V
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
3
2
102
7
5
td(off)
3
2
tr
td(on)
tf
5 7 100
2 3
DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
40
SOURCE CURRENT IS (A)
16
VDS = 100V
200V
12
400V
8
4
0
101
7
5
5 7 101
2 3
DRAIN-SOURCE VOLTAGE VDS (V)
Tch = 25°C
ID = 10A
20
40
60
80
VGS = 0V
Pulse Test
32
TC=125°C
24
25°C
16
75°C
8
0
100
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
VGS = 10V
ID = 1/2ID
Pulse Test
3
2
100
7
5
3
2
10–1
Tch = 25°C
VDD = 200V
VGS = 10V
RGEN = RGS = 50Ω
101
10–1
20
0
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
Coss
102
7
5
GATE-SOURCE THRESHOLD
VOLTAGE VGS (th) (V)
CAPACITANCE
Ciss, Coss, Crss (pF)
GATE-SOURCE VOLTAGE VGS (V)
7
5
SWITCHING TIME (ns)
Ciss
103
0
50
100
150
200
250
CHANNEL TEMPERATURE Tch (°C)
VDS = 10V
ID = 1mA
4.0
3.0
2.0
1.0
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK10SM-10
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
101
7
5
3
2
3
2
Irr
101
7
5
101
2 3
5 7 102
0
Tch = 25°C 10
Tch = 150°C 7
5
2 3
5 7 103
SOURCE CURRENT dis/dt (–A/µs)
3
2
3
2
102
7
5
101
7
5
trr
Irr
3
2
Tch = 25°C
Tch = 150°C
101 0
10
2 3
5 7 101
2 3
3
2
100
5 7 102
SOURCE CURRENT IS (A)
DIODE REVERSE VS.
SOURCE CURRENT dis/dt CHARACTERISTIC
(TYPICAL)
5
5
IS = 10A
VGS = 0V
3
3
VDD = 250V 2
2
trr
102
7
5
DIODE REVERSE VS.
SOURCE CURRENT CHARACTERISTIC
(TYPICAL)
102
103
dis/dt = –100A/µs
7
7
VGS = 0V
5
5
VDD = 250V
REVERSE RECOVERY CURRENT Irr (A)
REVERSE RECOVERY TIME trr (ns)
1.4
TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
REVERSE RECOVERY CURRENT Irr (A)
REVERSE RECOVERY TIME trr (ns)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
HIGH-SPEED SWITCHING USE
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
101
7
5
3
2
100
7
5
3
2
D=1
0.5
0.2
0.1
PDM
10–1
7
5
3
2
tw
0.05
0.02
0.01
T
D= tw
T
Single Pulse
10–2
10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
PULSE WIDTH tw (s)
Feb.1999