MITSUBISHI RA45H7687M1_10

Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA45H7687M1
RoHS Compliance, 763-870MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA45H7687M1 is a 45-watt RF MOSFET Amplifier
Module for 12.8-volt mobile radios that operate in the 763- to
870-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage 1 and the gate voltage 2(VGG1=VGG2=0V), only a small
leakage current flows into the drain and the nominal output
signal (Pout=45W) attenuates up to 60 dB. When fixed i.e. 3.4V, is
supplied to the gate voltage 1, the output power and the drain
current increase as the gate voltage 2 increases. The output
power and the drain current increase substantially with the gate
voltage 2 around 0V (minimum) under the condition when the
gate voltage 1 is kept in 3.4V. The nominal output power
becomes available at the state that VGG2 is 4V (typical) and 5V
(maximum). At this point, VGG1 has to be kept in 3.4V.
At VGG1=3.4V & VGG2=5V, the typical gate currents are 0.4mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltages and controlling the output power
with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD≅0 @ VDD=12.8V, VGG=0V)
BLOCK DIAGRAM
2
3
1
4
5
1
RF Input added Gate Voltage 1(Pin&VGG1)
2
Gate Voltage 2(VGG2), Power Control
3
Drain Voltage (VDD), Battery
4
RF Output (Pout)
5
RF Ground (Case)
• Pout>45W, ηT>33% @VDD=12.8V, VGG1=3.4V, VGG2=5V, Pin=50mW
• Broadband Frequency Range: 763-870MHz
• Metal cap structure that makes the improvements of RF
radiation simple
• Low-Power Control Current IGG1+IGG2=0.4mA (typ) @ VGG1=3.4V, VGG2=5V
• Module Size: 67 x 19.4 x 9.9 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltages and controlling the output power
with the input power.
PACKAGE CODE: H2M
RoHS COMPLIANCE
• RA45H7687M1 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
SUPPLY FORM
RA45H7687M1-101
Antistatic tray,
10 modules/tray
25 Jun 2010
RA45H7687M1
1/10
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE
RA45H7687M1
MAXIMUM RATINGS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
RATING
UNIT
VDD
Drain Voltage
VGG1=3.4V ± 7%, VGG2<5V, Pin=0W
17
V
VGG1
Gate Voltage 1
VGG2<5V, VDD<12.8V, Pin=50mW
4.5
V
VGG2
Gate Voltage 2
VGG1=3.4V ± 7%, VDD<12.8V, Pin=50mW
6
V
100
mW
60
W
-30 to +100
°C
-40 to +110
°C
Pin
Input Power
Pout
Output Power
Tcase(OP)
Tstg
f=763-870MHz,
Operation Case Temperature Range
VGG1=3.4V ± 7%, VGG2<5V
Storage Temperature Range
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
SYMBOL PARAMETER
F
CONDITIONS
MIN
MAX
UNIT
763
-
870
MHz
Pout1
Output Power 1
VDD=12.8V, VGG1=3.4V, VGG2=5V, Pin=50mW
45
-
-
W
ηT
Total Efficiency
VDD=12.8V
33
-
-
%
2fo
Frequency Range
TYP
nd
Harmonic
VGG1=3.4V
-
-
-40
dBc
nd
Harmonic
VGG2=5V
-
-
-35
dBc
Pin=50mW
-
-
3:1
—
2
3fo
3
ρin
Input VSWR
IDD
Leakage Current
VDD=17V, VGG1=VGG2=0V, Pin=0W
-
-
1
mA
Pout2
Output Power 2*
VDD=15.2V, VGG1=3.4V, VGG2=1V, Pin=2dBm
-
-
1.5
W
—
Stability
—
Load VSWR Tolerance
VDD=10.0-15.2V, Pin=1-100mW,
1.5<Pout <50W (VGG2 control, VGG1=3.4V),
Load VSWR=3:1
VDD=15.2V, Pin=50mW,
Pout=45W (VGG2 control, VGG1=3.4V),
Load VSWR=20:1
No parasitic oscillation
—
No degradation or destroy
—
*: This is guaranteed as design value.
All parameters, conditions, ratings, and limits are subject to change without notice.
25 Jun 2010
RA45H7687M1
2/10
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE
RA45H7687M1
nd
rd
OUTPUT POWER, TOTAL EFFICIENCY,
versus FREQUENCY
2 , 3 HARMONICS versus FREQUENCY
80
-30
Pout
70
-40
HARMONICS (dBc)
TOTAL EFFICIENCY(%)
OUTPUT POWER Pout (W)
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
60
50
40
ηT
30
V DD=12.8V
V GG1=3.4V
V GG2=5V
Pin=50m W
20
10
760
780
800
820
840
FREQUENCY f (MHz)
860
3rd
-50
-60
2nd
-70
-80
760
880
V DD=12.8V
V GG1=3.4V
V GG2=5V
Pin=50m W
780
800
820
840
FREQUENCY f (MHz)
860
880
INPUT VSWR versus FREQUENCY
INPUT VSWR ρ in (-)
5
V DD=12.8V
V GG1=3.4V
V GG2=5V
Pin=50m W
4
3
2
1
760
ρ in
780
800
820
840
FREQUENCY f (MHz)
860
880
25 Jun 2010
RA45H7687M1
3/10
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
16
30
12
4
0
-5
0
5
10
15
40
16
30
12
20
10
20
-5
16
30
12
20
8
f=870MHz
V DD=12.8V
V GG1=3.4V
V GG2=5V
-5
0
5
10
15
4
OUTPUT POWER Pout (W)
20
Gp
-10
0
70
60
40
8
I DD
6
Pout
4
10
2
0
0
6
8
10
12
14
OUTPUT POWER Pout (W)
12
DRAIN CURRENT I DD (A)
OUTPUT POWER Pout (W)
14
10
4
12
10
40
8
I DD
30
6
20
4
10
2
0
4
6
8
10
12
14
16
90
16
50
2
14
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
f=806MHz
V GG1=3.4V
V GG2=5V
Pin=50m W
20
16
Pout
50
2
18
30
f=764MHz
V GG1=3.4V
V GG2=5V
Pin=50m W
DRAIN VOLTAGE VDD (V)
90
60
20
0
20
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
70
15
18
80
INPUT POWER Pin (dBm)
80
10
90
DRAIN CURRENT I DD (A)
POWER GAIN Gp (dB)
OUTPUT POWER Pout (dBm)
24
0
5
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
Pout
I DD
0
INPUT POWER Pin (dBm)
60
10
4
0
-10
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
40
8
f=806MHz
V DD=12.8V
V GG1=3.4V
V GG2=5V
I DD
INPUT POWER Pin (dBm)
50
20
Gp
0
0
-10
50
DRAIN CURRENT I DD (A)
I DD
10
8
f=764MHz
V DD=12.8V
V GG1=3.4V
V GG2=5V
24
Pout
18
f=870MHz
V GG1=3.4V
V GG2=5V
Pin=50m W
80
70
60
16
14
12
50
10
40
8
I DD
30
6
Pout
20
4
10
2
0
16
DRAIN CURRENT I DD (A)
20
POWER GAIN Gp (dB)
40
OUTPUT POWER Pout (dBm)
20
Gp
DRAIN CURRENT I DD (A)
24
Pout
50
POWER GAIN Gp (dB)
OUTPUT POWER Pout (dBm)
60
DRAIN CURRENT I DD (A)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
RA45H7687M1
0
2
4
6
8
10
12
14
16
DRAIN VOLTAGE VDD (V)
DRAIN VOLTAGE VDD (V)
25 Jun 2010
RA45H7687M1
4/10
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE
RA45H7687M1
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
12
10
Pout (dBm )
40
8
30
6
10
4
f=764MHz
V DD=12.8V
V GG1=3.4V
Pin=50m W
I DD
Pout (W)
2
0
1
2
3
4
40
8
30
6
I DD
20
8
6
I DD
4
f=870MHz
V DD=12.8V
V GG1=3.4V
Pin=50m W
2
OUTPUT POWER Pout (W) (dBm)
40
DRAIN CURRENT I DD (A)
OUTPUT POWER Pout (W) (dBm)
10
Pout (dBm )
Pout (W)
0
1
2
3
4
40
30
6
I DD
20
4
10
2
0
1
2
3
4
5
10
Pout (dBm )
8
30
6
20
4
I DD
2
OUTPUT POWER Pout (W) (dBm)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE2
DRAIN CURRENT I DD (A)
OUTPUT POWER Pout (W) (dBm)
8
0
12
10
10
Pout (dBm )
GATE VOLTAGE VGG2 (V)
60
40
5
12
f=764MHz
V DD=12.8V
V GG1=3.4V
Pin=2dBm
50
5
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE2
50
4
60
GATE VOLTAGE VGG2 (V)
f=806MHz
V DD=12.8V
V GG1=3.4V
Pin=2dBm
3
Pout (W)
0
0
2
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE2
12
10
1
GATE VOLTAGE VGG2 (V)
60
20
2
0
0
5
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE2
30
4
f=806MHz
V DD=12.8V
V GG1=3.4V
Pin=50m W
Pout (W)
10
GATE VOLTAGE VGG2 (V)
50
10
Pout (dBm )
0
0
0
50
DRAIN CURRENT I DD (A)
20
12
60
12
f=870MHz
V DD=12.8V
V GG1=3.4V
Pin=2dBm
50
40
10
8
Pout (dBm )
30
6
I DD
20
10
4
2
Pout (W)
DRAIN CURRENT I DD (A)
50
60
DRAIN CURRENT I DD (A)
60
OUTPUT POWER Pout (W) (dBm)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE2
DRAIN CURRENT I DD (A)
OUTPUT POWER Pout (W) (dBm)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE2
Pout (W)
0
0
1
2
3
4
0
5
0
1
GATE VOLTAGE VGG2 (V)
2
3
4
5
GATE VOLTAGE VGG2 (V)
25 Jun 2010
RA45H7687M1
5/10
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE
RA45H7687M1
OUTLINE DRAWING (mm)
67±1
④
18±1
10.7±1
③
15±1
① ②
4±0.5
49.8±1
2-R2±0.5
19.4±1
(3.26)
60±1
12.5±1
0.6±0.2
17±1
44±1
（2.6）
（9.9）
3.1+0.6/-0.4
7.3±0.5
56±1
1 RF Input added Gate Voltage 1(Pin & VGG1)
2 Gate Voltage 2(VGG2)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
25 Jun 2010
RA45H7687M1
6/10
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE
RA45H7687M1
TEST BLOCK DIAGRAM
+
DC Pow er
Supply V GG1
Signal
Generator
Attenuator
Preamplifier
Attenuator
Pow er
Meter
Directional
Coupler
DUT
R1
C1
1
2
3
C3
VA
GG1
Directional
Coupler
Attenuator
Pow er
Meter
C4
+
DC Pow er
Supply V GG2
C1: 4700pF, C2: 1000pF, R1: suitable. Please refer the detail below.
4
ZL=50Ω
ZG=50Ω
C2
Spectrum
Analyzer
5
+
DC Pow er
Supply V DD
1 RF Input added Gate Voltage 1(Pin & VGG1)
C3, C4: 4700pF, 22uF in parallel
2 Gate Voltage 2(VGG2)
VGG1=3.4V
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
EQUIVALENT CIRCUIT
3
4
1
5
2
NOTE: Resistance between Gate Voltage 1, where RF is input, and ground equals to 15k ohm.
External resistance connected to VGG1; impedance between Pin&VGG1 and ground needs to make high impedance
that doesn't prevent RF characteristic on this module.
25 Jun 2010
RA45H7687M1
7/10
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE
RA45H7687M1
RECOMMENDATIONS and APPLICATION INFORMATION:
Construction:
This module consists of a glass-epoxy substrate soldered onto a copper flange. For mechanical protection, a metal
cap is attached (which makes the improvement of RF radiation easy). The MOSFET transistor chips are die
bonded onto metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually
inductors), chip capacitors, and resistors form the bias and matching circuits. Wire leads soldered onto the
glass-epoxy substrate provide the DC and RF connection.
Following conditions must be avoided:
a) Bending forces on the glass-epoxy substrate (for example, by driving screws or from fast thermal changes)
b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion)
c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichloroethylene)
d) Frequent on/off switching that causes thermal expansion of the resin
e) ESD, surge, overvoltage in combination with load VSWR, and oscillation
ESD:
This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.
Mounting:
A thermal compound between module and heat sink is recommended for low thermal contact resistance.
The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board.
M3 screws are recommended with a tightening torque of 4.0 to 6.0 kgf-cm.
Soldering and Defluxing:
This module is designed for manual soldering.
The leads must be soldered after the module is screwed onto the heat sink.
The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second.
Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause
bubbles in the coating of the transistor chips which can lift off the bond wires).
Thermal Design of the Heat Sink:
At Pout=45W, VDD=12.8V and Pin=50mW each stage transistor operating conditions are:
Pin
Pout
Rth(ch-case)
IDD @ ηT=33%
VDD
Stage
(W)
(W)
(V)
(°C/W)
(A)
1st
0.05
3.0
3.5
0.62
12.8
2nd
3.0
45.0
0.6
9.96
The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are:
Tch1 = Tcase + (12.8V x 0.62A – 3.0W + 0.05W) x 3.5°C/W = Tcase + 17.5 °C
Tch2 = Tcase + (12.8V x 9.96A – 45.0W + 3.0W) x 0.6°C/W = Tcase + 51.3 °C
For long-term reliability, it is best to keep the module case temperature (Tcase) below 90°C. For an ambient
temperature Tair=60°C and Pout=45W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / ηT ) Pout + Pin ) of the heat sink, including the contact resistance, is:
Rth(case-air) = (90°C - 60°C) / (45W/33% - 45W + 0.05W) = 0.33 °C/W
When mounting the module with the thermal resistance of 0.33 °C/W, the channel temperature of each stage
transistor is:
Tch1 = Tair + 47.5 °C
Tch2 = Tair + 81.3 °C
The 175°C maximum rating for the channel temperature ensures application under derated conditions.
25 Jun 2010
RA45H7687M1
8/10
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE
RA45H7687M1
Output Power Control:
Depending on linearity, the following three methods are recommended to control the output power:
a) Non-linear FM modulation at high power operating:
By the gate voltages (VGG1 and VGG2).
When the gate voltages are close to zero, the nominal output signal (Pout=45W) is attenuated up to 60 dB and
only a small leakage current flows from the battery into the drain. (On the following, V GG1 has to be kept in 3.4V.)
Around VGG2=0V(minimum), the output power and drain current increases substantially.
Around VGG2=4V (typical) to VGG2=5V (maximum), the nominal output power becomes available.
b) Linear AM modulation:
By RF input power Pin. (On the following, V GG1 has to be kept in 3.4V.)
VGG2 is used to set the drain’s quiescent current for the required linearity.
Oscillation:
To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and
drain, a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor.
When an amplifier circuit around this module shows oscillation, the following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module?
b) Is the load impedance ZL=50Ω?
c) Is the source impedance ZG=50Ω?
ATTENTION:
1.High Temperature; This product might have a heat generation while operation,Please take notice that have a
possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off.
At the near the product,do not place the combustible material that have possibilities to arise the fire.
2. Generation of High Frequency Power; This product generate a high frequency power. Please take notice that do
not leakage the unnecessary electric wave and use this products without cause damage for human and property per
normal operation.
3. Before use; Before use the product,Please design the equipment in consideration of the risk for human and
electric wave obstacle for equipment.
PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES:
1.The specifications of mention are not guarantee values in this data sheet. Please confirm additional details
regarding operation of these products from the formal specification sheet. For copies of the formal specification
sheets, please contact one of our sales offices.
2.RA series products (RF power amplifier modules) are designed for consumer mobile communication terminals
and were not specifically designed for use in other applications. In particular, while these products are highly
reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is
sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements.
Examples of critical communications elements would include transmitters for base station applications and fixed
station applications that operate with long term continuous transmission and a higher on-off frequency during
transmitting, especially for systems that may have a high impact to society.
3.RA series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore
appropriate ESD precautions are required.
4.In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is
recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan,
etc.) to keep the case temperature for RA series products lower than 60deg/C under standard conditions, and
less than 90deg/C under extreme conditions.
5.RA series products are designed to operate into a nominal load impedance of 50 ohms. Under the condition of
operating into a severe high load VSWR approaching an open or short, an over load condition could occur. In the
worst case there is risk for burn out of the transistors and burning of other parts including the substrate in the
module.
6.The formal specification includes a guarantee against parasitic oscillation under a specified maximum load
mismatch condition. The inspection for parasitic oscillation is performed on a sample basis on our manufacturing
line. It is recommended that verification of no parasitic oscillation be performed at the completed equipment level
also.
7.For specific precautions regarding assembly of these products into the equipment, please refer to the
supplementary items in the specification sheet.
8.Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any
way from it’s original form.
9.For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of
this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
25 Jun 2010
RA45H7687M1
9/10
Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE
RA45H7687M1
Keep safety first in your circuit designs !
Mitsubishi
Electric Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs, with appropriate measures such as (i)
placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against
any malfunction or mishap.
Notes regarding these materials
These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under
any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a
third party.
- Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any
third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms,
or circuit application examples contained in these materials.
- All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are
subject to change by Mitsubishi Electric Corporation without notice due to product improvements or
other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or
an authorized Mitsubishi Semiconductor product distributor for the latest product information before
purchasing a product listed herein. The information described here may contain technical inaccuracies
or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage,
liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information
published by Mitsubishi Electric Corporation by various means, including the Mitsubishi
Semiconductor home page (http://www.mitsubishichips.com).
- When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to evaluate all information as a total system before
making a final decision on the applicability of the information and products. Mitsubishi Electric
Corporation assumes no responsibility for any damage, liability or other loss resulting from the
information contained herein.
- Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or
system that is used under circumstances in which human life is potentially at stake. Please contact
Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when
considering the use of a product contained herein for any specific purposes, such as apparatus or
systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
- The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in
whole or in part these materials.
- If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other
than the approved destination.
-
25 Jun 2010
RA45H7687M1
10/10