Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H1317M1 RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H1317M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. The output power and drain current increase as the gate voltage increases. With a gate voltage around 3.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation. FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V) • Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW • Broadband Frequency Range: 135-175MHz • Low-Power Control Current IGG=1mA (typ) at VGG=5V • Module Size: 67 x 19.4 x 9.9 mm BLOCK DIAGRAM 2 3 1 4 5 1 RF Input (Pin) 2 Gate Voltage (VGG), Power Control 3 Drain Voltage (VDD), Battery 4 RF Output (Pout) 5 RF Ground (Case) PACKAGE CODE: H2M RoHS COMPLIANCE • RA30H1317M1-201 is a RoHS compliant product. • RoHS compliance is indicate by the letter “G” after the Lot Marking. • This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. How ever ,it applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes. 2.Lead in electronic Ceramic parts. ORDERING INFORMATION: ORDER NUMBER SUPPLY FORM RA30H1317M1-201 Antistatic tray, 10 modules/tray RA30H1317M1 24 Jun 2010 1/10 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA30H1317M1 MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified) SYMBOL PARAMETER CONDITIONS RATING UNIT VDD Drain Voltage VGG<5V, ZG=ZL=50Ω 17 V VGG Gate Voltage VDD<12.5V, Pin=50mW, ZG=ZL=50Ω 6 V Pin Input Power 100 mW Pout Output Power 45 W Operation Case Temperature Range -30 to +100 °C Storage Temperature Range -40 to +110 °C MIN TYP MAX UNIT Frequency Range 135 - 175 MHz Pout Output Power 30 - - W ηT Total Efficiency 40 - - % Tcase(OP) Tstg f=135-175MHz, VGG<5V The above parameters are independently guaranteed. ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) SYMBOL PARAMETER f nd Harmonic CONDITIONS VDD=12.5V,VGG=5V,Pin=50mW 2fo 2 - - -35 dBc 3fo 3 Harmonic - - -45 dBc ρin Input VSWR - - 3:1 — IGG Leakage Current VDD=12.5V,VGG=0V,Pin=0W - - 1 mA — Stability VDD=10.0-15.2V, Pin=25-70mW, Pout<30W (VGG control), Load VSWR=3:1 — Load VSWR Tolerance VDD=15.2V, Pin=50mW, Pout=30W (VGG control), Load VSWR=20:1 rd No parasitic oscillation More than –60dBc No degradation or destroy — — All parameters, conditions, ratings, and limits are subject to change without notice. RA30H1317M1 24 Jun 2010 2/10 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA30H1317M1 TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) OUTPUT POWER, TOTAL EFFICIENCY, and INPUT VSWR versus Frequency 100 -20 45 90 -25 80 -30 ηｔ 30 60 25 50 20 40 VDD=12.5V VGG=5V Pin=50mW 15 10 ρin 5 30 20 0 130 140 150 160 170 VDD=12.5V VGG=5V Pin=50mW -35 -40 -45 -50 2nd -55 -60 10 -65 0 -70 180 3rd 130 140 150 Frequency f(MHz) 50 9 45 8 40 Pout Gp 35 7 30 6 25 5 4 IDD 15 3 f=135MHz VDD=12.5V VGG=5V 10 5 2 0 -10 -5 0 5 10 15 Power Gain Gp(dB) 10 45 Output Power Pout(dBm) 50 20 170 180 OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER Drain Current IDD(A) Power Gain Gp(dB) Output Power Pout(dBm) OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER 40 160 Frequency f(MHz) 8 Gp 7 30 6 25 5 20 4 IDD 15 0 0 3 f=155MHz VDD=12.5V VGG=5V 10 5 2 1 0 -10 Input Power Pin(dBm) 9 Pout 35 1 20 10 Drain Current IDD(A) Input VSWR ρin (-) 70 35 Harmonics (dBc) Pout Total Efficiency ηt(%) 50 40 Output Power Pout(W) 2nd, 3rd HARMONICS versus FREQUENCY -5 0 5 10 15 20 Input Power Pin(dBm) OUTPUT POWER, POWER GAIN and DRAIN CURRENT versus INPUT POWER 10 50 9 Pout 8 Gp 35 7 30 6 25 5 20 4 IDD 15 3 f=175MHz VDD=12.5V VGG=5V 10 5 2 Drain Current IDD(A) 40 Power Gain Gp(dB) Output Power Pout(dBm) 45 1 0 0 -10 -5 0 5 10 15 20 Input Power Pin(dBm) RA30H1317M1 24 Jun 2010 3/10 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA30H1317M1 TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) Output Power Pout(W) 40 Pout 10 50 9 45 8 40 35 7 30 6 IDD 25 5 20 4 15 3 10 5 0 2 4 6 8 10 12 Output Power Pout(W) f=135MHz VGG=5V Pin=50mW 45 Drain Current IDD(A) 50 OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE 10 f=155MHz VGG=5V Pin=50mW 9 Pout 8 7 35 30 6 IDD 25 5 20 4 15 3 2 10 2 1 5 1 0 0 14 0 2 Drain Voltage VDD(V) Drain Current IDD(A) OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE 4 6 8 10 12 14 Drain Voltage VDD(V) OUTPUT POWER and DRAIN CURRENT versus DRAIN VOLTAGE 40 Output Power Pout(W) 10 f=175MHz VGG=5V Pin=50mW 45 9 Pout 8 7 35 IDD 30 6 25 5 20 4 15 3 10 2 5 1 Drain Current IDD(A) 50 0 0 2 4 6 8 10 12 14 Drain Voltage VDD(V) RA30H1317M1 24 Jun 2010 4/10 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA30H1317M1 TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE 35 Pout 50 9 45 8 40 7 IDD 30 6 25 5 20 4 15 3 10 5 0 2.5 3.0 3.5 4.0 4.5 5.0 10 f=155MHz VDD=12.5V Pin=50mW 35 9 Pout 8 7 6 30 IDD 25 5 20 4 15 3 2 10 2 1 5 1 0 0 5.5 0 2.5 Gate Voltage VGG(V) Drain Current IDD(A) Output Power Pout(W) 40 10 Output Power Pout(W) f=135MHz VDD=12.5V Pin=50mW 45 Drain Current IDD(A) 50 3.0 3.5 4.0 4.5 5.0 5.5 Gate Voltage VGG(V) OUTPUT POWER and DRAIN CURRENT versus GATE VOLTAGE 10 50 Output Power Pout(W) 40 35 9 Pout 8 7 IDD 30 6 25 5 20 4 15 3 10 2 5 1 Drain Current IDD(A) f=175MHz VDD=12.5V Pin=50mW 45 0 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Gate Voltage VGG(V) RA30H1317M1 24 Jun 2010 5/10 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA30H1317M1 OUTLINE DRAWING (mm) 67±1 ④ ⑤ 18±1 10.7±1 ③ 15±1 ① ② 4±0.5 49.8±1 2-R2±0.5 19.4±1 (3.26) 60±1 12.5±1 0.6±0.2 17±1 44±1 （2.6） （9.9） 3.1+0.6/-0.4 7.3±0.5 56±1 1 RF Input (Pin) 2 Gate Voltage (VGG) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case) RA30H1317M1 24 Jun 2010 6/10 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA30H1317M1 TEST BLOCK DIAGRAM Power Meter DUT 1 Signal Generator Attenuator Preamplifier Attenuator Directional Coupler C1, C2: 4700pF, 22uF in parallel 3 2 Spectrum Analyzer 4 ZL=50Ω ZG=50Ω C1 5 Directional Coupler Attenuator Power Meter C2 + DC Power Supply VGG + DC Power Supply VDD 1 RF Input (Pin) 2 Gate Voltage (VGG) 3 Drain Voltage (VDD) 4 RF Output (Pout) 5 RF Ground (Case) EQUIVALENT CIRCUIT 3 2 4 1 5 RA30H1317M1 24 Jun 2010 7/10 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA30H1317M1 RECOMMENDATIONS and APPLICATION INFORMATION: Construction: This module consists of a glass-epoxy substrate soldered onto a copper flange. For mechanical protection, a metal cap is attached (which makes the improvement of RF radiation easy). The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and matching circuits. Wire leads soldered onto the glass-epoxy substrate provide the DC and RF connection. Following conditions must be avoided: a) Bending forces on the glass-epoxy substrate (for example, by driving screws or from fast thermal changes) b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion) c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichloroethylene) d) Frequent on/off switching that causes thermal expansion of the resin e) ESD, surge, overvoltage in combination with load VSWR, and oscillation ESD: This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required. Mounting: A thermal compound between module and heat sink is recommended for low thermal contact resistance. The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board. M3 screws are recommended with a tightening torque of 4.0 to 6.0 kgf-cm. Soldering and Defluxing: This module is designed for manual soldering. The leads must be soldered after the module is screwed onto the heat sink. The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second. Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles in the coating of the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=30W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are: Pout Rth(ch-case) IDD @ ηT=40% VDD Pin Stage (W) (W) (V) (°C/W) (A) st 0.05 5.0 2.9 0.84 1 12.5 nd 2 5.0 30.0 0.7 5.16 The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are: Tch1 = Tcase + (12.5V x 0.84A – 5.0W + 0.05W) x 2.9°C/W = Tcase + 16.1 °C Tch2 = Tcase + (12.5V x 5.16A - 30.0W + 5.0W) x 0.7°C/W = Tcase + 27.7 °C For long-term reliability, it is best to keep the module case temperature (Tcase) below 90°C. For an ambient temperature Tair=60°C and Pout=30W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / ηT ) Pout + Pin ) of the heat sink, including the contact resistance, is: Rth(case-air) = (90°C - 60°C) / (30W/40% – 30W + 0.05W) = 0.67 °C/W When mounting the module with the thermal resistance of 0.67 °C/W, the channel temperature of each stage transistor is: Tch1 = Tair + 46.1 °C Tch2 = Tair + 57.7 °C The 175°C maximum rating for the channel temperature ensures application under derated conditions. RA30H1317M1 24 Jun 2010 8/10 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA30H1317M1 Output Power Control: By the gate voltage (VGG). Around VGG=3.5V, the output power and drain current increases substantially. Around VGG=4V (typical) to VGG=5V (maximum), the nominal output power becomes available. Oscillation: To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor. When an amplifier circuit around this module shows oscillation, the following may be checked: a) Do the bias decoupling capacitors have a low inductance pass to the case of the module? b) Is the load impedance ZL=50Ω? c) Is the source impedance ZG=50Ω? ATTENTION: 1.High Temperature; This product might have a heat generation while operation,Please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. At the near the product,do not place the combustible material that have possibilities to arise the fire. 2. Generation of High Frequency Power; This product generate a high frequency power. Please take notice that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3. Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES: 1.The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices. 2.RA series products (RF power amplifier modules) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements. Examples of critical communications elements would include transmitters for base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, especially for systems that may have a high impact to society. 3.RA series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD precautions are required. 4.In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the case temperature for RA series products lower than 60deg/C under standard conditions, and less than 90deg/C under extreme conditions. 5.RA series products are designed to operate into a nominal load impedance of 50 ohms. Under the condition of operating into a severe high load VSWR approaching an open or short, an over load condition could occur. In the worst case there is risk for burn out of the transistors and burning of other parts including the substrate in the module. 6.The formal specification includes a guarantee against parasitic oscillation under a specified maximum load mismatch condition. The inspection for parasitic oscillation is performed on a sample basis on our manufacturing line. It is recommended that verification of no parasitic oscillation be performed at the completed equipment level also. 7.For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet. 8.Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it’s original form. 9.For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this data sheet. 10. Please refer to the additional precautions in the formal specification sheet. RA30H1317M1 24 Jun 2010 9/10 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS COMPLIANCE RA30H1317M1 Keep safety first in your circuit designs ! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. 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