MITSUBISHI RA30H4552M1_10

Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance, 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA30H4552M1 is a 30-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 450- to
520-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the nominal output signal (Pout=30W) attenuates up to
60 dB. The output power and the drain current increase as the
gate voltage increases. The output power and the drain current
increase substantially with the gate voltage around 0V(minimum).
The nominal output power becomes available at the state that
VGG is 4V (typical) and 5V (maximum).
At VGG=5V, the typical gate currents are 1mA.This module is
designed for non-linear FM modulation, but may also be used for
linear modulation by setting the drain quiescent current with the
gate voltage and controlling the output power with the input
power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
• Pout>30W, T>42% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 450-520MHz
• Metal shield structure that makes the improvements of spurious
radiation simple
• Low-Power Control Current IGG=1mA (typ) @ VGG=5V
• Module Size: 67 x 19.4 x 9.9 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltages and controlling the output power
with the input power.
BLOCK DIAGRAM
2
3
1
4
5
1
RF Input (Pin)
2
Gate Voltage (VGG), Power Control
3
Drain Voltage (VDD), Battery
4
RF Output (Pout)
5
RF Ground (Case)
PACKAGE CODE: H2M
RoHS COMPLIANCE
• RA30H4552M1 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
SUPPLY FORM
RA30H4552M1-101
Antistatic tray,
10 modules/tray
RA30H4552M1
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Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE
RA30H4552M1
MAXIMUM RATINGS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
RATING
UNIT
VDD
Drain Voltage
VGG<5V, Pin=0W
17
V
VGG
Gate Voltage
VDD<12.5V, Pin=50mW
6
V
Pin
Input Power
100
mW
Pout
Output Power
45
W
-30 to +100
°C
-40 to +110
°C
Tcase(OP)
Tstg
f=450-520MHz,
Operation Case Temperature Range
VGG<5V
Storage Temperature Range
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
SYMBOL PARAMETER
F
CONDITIONS
Frequency Range
MIN
TYP
MAX
UNIT
450
-
520
MHz
-
W
Pout
Output Power
VDD=12.5V
30
-
T
Total Efficiency
VGG=5V
42
-
-
%
2fo
2
-
-
-40
dBc
in
Input VSWR
-
-
3:1
—
IGG
Gate Current
VDD=0V, VGG=5V, Pin=0W
-
1
-
mA
IDD
Leakage Current
VDD=17V, VGG=0V, Pin=0W
-
-
1
mA
nd
Harmonic
—
Stability
—
Load VSWR Tolerance
Pin=50mW
VDD=10.0-15.2V, Pin=25-70mW,
5<Pout <40W (VGG control), Load VSWR=3:1
VDD=15.2V, Pin=50mW,
Pout=30W (VGG control), Load VSWR=20:1
No parasitic oscillation
—
No degradation or destroy
—
All parameters, conditions, ratings, and limits are subject to change without notice.
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Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE
RA30H4552M1
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
2nd, 3rd HARMONICS versus FREQUENCY
OUTPUT POWER, TOTAL EFFICIENCY,
versus FREQUENCY
-30
60
hT
HARMONICS (dBc)
OUTPUT POWER P out (W)
TOTAL EFFICIENCY(%)
70
50
Pout
40
30
VDD=12.5V
VGG=5V
Pin=50mW
20
VDD=12.5V
VGG=5V
Pin=50mW
-40
2nd
-50
-60
-70
3
rd
-80
10
430 440 450 460 470 480 490 500 510 520 530
430 440 450 460 470 480 490 500 510 520 530
FREQUENCY f (MHz)
FREQUENCY f (MHz)
INPUT VSWR versus FREQUENCY
INPUT VSWR rin (-)
5
VDD=12.5V
VGG=5V
Pin=50mW
4
3
2
rin
1
430 440 450 460 470 480 490 500 510 520 530
FREQUENCY f (MHz)
40
16
30
12
Gp
20
8
IDD
10
4
0
-5
0
5
10
15
50
16
Gp
30
20
4
0
-10
Gp
12
8
IDD
10
4
0
OUTPUT POWER Pout (dBm)
POWER GAIN Gp (dB)
20
16
0
5
10
5
10
15
20
15
24
f=520MHz
VDD=12.5V
VGG=5V
50
Pout
20
40
16
30
12
Gp
20
8
IDD
10
4
0
0
-5
0
60
DRAIN CURRENT I DD (A)
OUTPUT POWER Pout (dBm)
POWER GAIN Gp (dB)
Pout
40
-10
-5
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
24
20
8
IDD
INPUT POWER Pin (dBm)
60
30
12
10
20
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
50
20
40
INPUT POWER Pin (dBm)
f=490MHz
VDD=12.5V
VGG=5V
Pout
0
0
-10
24
f=470MHz
VDD=12.5V
VGG=5V
DD (A)
20
60
0
-10
20
DRAIN CURRENT I DD (A)
50
Pout
OUTPUT POWER Pout (dBm)
POWER GAIN Gp (dB)
24
f=450MHz
VDD=12.5V
VGG=5V
DRAIN CURRENT I DD (A)
OUTPUT POWER Pout (dBm)
POWER GAIN Gp (dB)
60
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
DRAIN CURRENT I
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
-5
0
5
10
15
20
INPUT POWER Pin (dBm)
INPUT POWER Pin (dBm)
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Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA30H4552M1
RoHS COMPLIANCE
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
10
40
8
6
IDD
20
4
10
2
0
0
4
6
8
10
12
14
40
8
30
20
4
10
2
0
16
0
2
4
10
Pout
8
30
6
IDD
20
4
10
2
0
0
4
6
8
10
12
14
50
8
30
20
4
10
2
0
4
6
4
10
2
0
OUTPUT POWER P out (W)
8
0
5
8
30
6
IDD
20
4
10
2
0
4
5
6
20
4
10
2
0
OUTPUT POWER P out (W)
6
IDD
60
DRAIN CURRENT I DD (A)
OUTPUT POWER P out (W)
8
0
5
3
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
10
4
10
Pout
40
2
Pout
30
3
16
0
12
2
14
GATE VOLTAGE VGG (V)
60
40
12
12
50
6
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
50
10
f=470MHz
VDD=12.5V
Pin=50mW
GATE VOLTAGE VGG (V)
f=490MHz
VDD=12.5V
Pin=50mW
8
60
DRAIN CURRENT I DD (A)
OUTPUT POWER P out (W)
10
4
6
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
20
3
6
IDD
2
Pout
IDD
2
10
Pout
0
12
30
16
DRAIN VOLTAGE VDD (V)
60
40
14
40
16
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
50
12
12
f=520MHz
VGG=5V
Pin=50mW
DRAIN VOLTAGE VDD (V)
f=450MHz
VDD=12.5V
Pin=50mW
10
60
OUTPUT POWER P out (W)
12
2
8
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
DRAIN CURRENT I DD (A)
OUTPUT POWER P out (W)
60
40
6
DRAIN VOLTAGE VDD (V)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
50
6
IDD
DRAIN VOLTAGE VDD (V)
f=490MHz
VGG=5V
Pin=50mW
10
DRAIN CURRENT I DD (A)
2
50
Pout
DRAIN CURRENT I DD (A)
30
12
f=470MHz
VGG=5V
Pin=50mW
12
f=520MHz
VDD=12.5V
Pin=50mW
50
10
Pout
40
8
30
6
IDD
20
4
10
2
0
6
0
2
GATE VOLTAGE VGG (V)
DRAIN CURRENT I DD (A)
50
60
OUTPUT POWER P out (W)
12
Pout
f=450MHz
VGG=5V
Pin=50mW
DRAIN CURRENT I DD (A)
OUTPUT POWER P out (W)
60
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
DRAIN CURRENT I DD (A)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
3
4
5
6
GATE VOLTAGE VGG (V)
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Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE
RA30H4552M1
OUTLINE DRAWING (mm)
67±1
④
18±1
10.7±1
③
15±1
① ②
4±0.5
49.8±1
2-R2±0.5
19.4±1
(3.26)
60±1
12.5±1
0.6±0.2
17±1
44±1
（2.6）
（9.9）
3.1+0.6/-0.4
7.3±0.5
56±1
1 RF Input (Pin )
2 Gate Voltage(VGG)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
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Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE
RA30H4552M1
TEST BLOCK DIAGRAM
Power
Meter
DUT
1
Signal
Generator
Attenuator
Preamplifier
2
3
4
Z L =50 Ω
Z G =50 Ω
Attenuator
Spectrum
Analyzer
5
Directional
Coupler
Directional
Coupler
C1
Attenuator
Power
Meter
C2
+
DC Power
Supply V DD
+
DC Power
Supply V GG
1 RF Input (Pin)
C1, C2: 4700pF, 22uF in parallel
2 Gate Voltage (VGG)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
EQUIVALENT CIRCUIT
3
1
4
5
2
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Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE
RA30H4552M1
RECOMMENDATIONS and APPLICATION INFORMATION:
Construction:
This module consists of a glass-epoxy substrate soldered onto a copper flange. For mechanical protection, a metal
cap is attached (which makes the improvement of RF radiation easy). The MOSFET transistor chips are die bonded
onto metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually inductors), chip
capacitors, and resistors form the bias and matching circuits. Wire leads soldered onto the glass-epoxy substrate
provide the DC and RF connection.
Following conditions must be avoided:
a) Bending forces on the glass-epoxy substrate (for example, by driving screws or from fast thermal changes)
b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion)
c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichloroethylene)
d) Frequent on/off switching that causes thermal expansion of the resin
e) ESD, surge, overvoltage in combination with load VSWR, and oscillation
ESD:
This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.
Mounting:
A thermal compound between module and heat sink is recommended for low thermal contact resistance.
The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board.
M3 screws are recommended with a tightening torque of 4.0 to 6.0 kgf-cm.
Soldering and Defluxing:
This module is designed for manual soldering.
The leads must be soldered after the module is screwed onto the heat sink.
The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second.
Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause
bubbles in the coating of the transistor chips which can lift off the bond wires).
Thermal Design of the Heat Sink:
At Pout=60W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are:
Pin
Pout
Rth(ch-case)
IDD @ T=42%
VDD
Stage
(W)
(W)
(°C/W)
(A)
(V)
st
1
0.05
2.5
2.24
1.5
12.5
nd
2
2.5
30.0
0.74
4.2
The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are:
Tch1 = Tcase + (12.5V x 1.5A – 2.5W + 0.05W) x 2.24°C/W = Tcase + 36.5 °C
Tch2 = Tcase + (12.5V x 4.2A – 30.0W + 2.5W) x 0.74°C/W = Tcase + 18.5 °C
For long-term reliability, it is best to keep the module case temperature (Tcase) below 90°C. For an ambient
temperature Tair=60°C and Pout=30W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / T ) Pout + Pin ) of the heat sink, including the contact resistance, is:
Rth(case-air) = (90°C - 60°C) / (30W/40% - 30W + 0.05W) = 0.67 °C/W
When mounting the module with the thermal resistance of 0.67 °C/W, the channel temperature of each stage
transistor is:
Tch1 = Tair + 66.5 °C
Tch2 = Tair + 48.5 °C
The 175°C maximum rating for the channel temperature ensures application under derated conditions.
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Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE
RA30H4552M1
Output Power Control:
Depending on linearity, the following three methods are recommended to control the output power:
a) Non-linear FM modulation at high power operating:
By the gate voltage(VGG).
When the gate voltage is close to zero, the nominal output signal (Pout=30W) is attenuated up to 60 dB and only
a small leakage current flows from the battery into the drain.
Around VGG=0V(minimum), the output power and drain current increases substantially.
Around VGG=4V (typical) to VGG=5V (maximum), the nominal output power becomes available.
b) Linear AM modulation:
By RF input power Pin. The gate voltage is used to set the drain’s quiescent current for the required linearity.
Oscillation:
To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain,
a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor.
When an amplifier circuit around this module shows oscillation, the following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module?
b) Is the load impedance ZL=50?
c) Is the source impedance ZG=50?
ATTENTION:
1.High Temperature; This product might have a heat generation while operation,Please take notice that have a
possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off.
At the near the product,do not place the combustible material that have possibilities to arise the fire.
2. Generation of High Frequency Power; This product generate a high frequency power. Please take notice that do
not leakage the unnecessary electric wave and use this products without cause damage for human and property per
normal operation.
3. Before use; Before use the product,Please design the equipment in consideration of the risk for human and
electric wave obstacle for equipment.
PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES:
1.The specifications of mention are not guarantee values in this data sheet. Please confirm additional details
regarding operation of these products from the formal specification sheet. For copies of the formal specification
sheets, please contact one of our sales offices.
2.RA series products (RF power amplifier modules) are designed for consumer mobile communication terminals and
were not specifically designed for use in other applications. In particular, while these products are highly reliable
for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient
to guarantee the level of reliability typically deemed necessary for critical communications elements. Examples of
critical communications elements would include transmitters for base station applications and fixed station
applications that operate with long term continuous transmission and a higher on-off frequency during transmitting,
especially for systems that may have a high impact to society.
3.RA series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore
appropriate ESD precautions are required.
4.In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is
recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.)
to keep the case temperature for RA series products lower than 60deg/C under standard conditions, and less than
90deg/C under extreme conditions.
5.RA series products are designed to operate into a nominal load impedance of 50 ohms. Under the condition of
operating into a severe high load VSWR approaching an open or short, an over load condition could occur. In the
worst case there is risk for burn out of the transistors and burning of other parts including the substrate in the
module.
6.The formal specification includes a guarantee against parasitic oscillation under a specified maximum load
mismatch condition. The inspection for parasitic oscillation is performed on a sample basis on our manufacturing
line. It is recommended that verification of no parasitic oscillation be performed at the completed equipment level
also.
7.For specific precautions regarding assembly of these products into the equipment, please refer to the
supplementary items in the specification sheet.
8.Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any
way from it’s original form.
9.For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of
this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
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Silicon RF Power Semiconductors
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS COMPLIANCE
RA30H4552M1
Keep safety first in your circuit designs !
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and
more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs, with appropriate measures such as (i)
placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against
any malfunction or mishap.
Notes regarding these materials
These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under
any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a
third party.
- Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any
third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms,
or circuit application examples contained in these materials.
- All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are
subject to change by Mitsubishi Electric Corporation without notice due to product improvements or
other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or
an authorized Mitsubishi Semiconductor product distributor for the latest product information before
purchasing a product listed herein. The information described here may contain technical inaccuracies
or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage,
liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information
published by Mitsubishi Electric Corporation by various means, including the Mitsubishi
Semiconductor home page (http://www.mitsubishichips.com).
- When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to evaluate all information as a total system before
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Corporation assumes no responsibility for any damage, liability or other loss resulting from the
information contained herein.
- Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or
system that is used under circumstances in which human life is potentially at stake. Please contact
Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when
considering the use of a product contained herein for any specific purposes, such as apparatus or
systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
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