FAIRCHILD 1N4154_09

1N4154
High Conductance Fast Diode
Features
General Description
• 500 milliwatt Power Dissipation package.
• Fast Switching Speed.
• Typical capacitance less than 1.0 picofarad.
The high breakdown voltage, fast switching speed and
high forward conductance of this diode packaged in a
DO-35 miniature Glass Axial leaded package makes it
desirable also as a general purpose diode.
DO-35
Color Band Denotes Cathode
Absolute Maximum Ratings * TA = 25°C unless otherwise noted
Symbol
Value
Unit
Working Inverse Voltage
35
V
IO
Average Rectified Current
100
mA
IF
DC Forward Current (IF)
300
mA
if
Recurrent Peak Forward Current (IF)
400
mA
Peak Forward Surge Current (IFSM)
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
4.0
A
A
WIV
iF(surge)
TSTG
TJ
Parameter
Storage Temperature Range
Operating Junction Temperature
-65 to +200
°C
175
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
PD
RθJA
Parameter
Value
Unit
Total Power Dissipation at TA = 25°C
Linear Derating Factor from TA = 25°C
500
3.33
mW
mW/°C
Thermal Resistance, Junction to Ambient
300
°C/W
© 2009 Fairchild Semiconductor Corporation
1N4154 Rev. B0
www.fairchildsemi.com
1
1N4154 — High Conductance Fast Diode
July 2009
Symbol
TA = 25°C unless otherwise noted
Parameter
Conditions
Min.
Max
Units
BV
Breakdown Voltage
IR = 5.0µA
IR
Reverse Leakage
VR = 25V
VR = 25V, TA = 150°C
100
100
nA
µA
VF
Forward Voltage
IF = 30mA
1.0
V
CT
Capacitance
VR = 0, f = 1.0MHz
4.0
pF
TRR
Reverse Recovery Time
IF = 10mA, VR = 6.0V
IRR = 1.0mA, RL = 100Ω
4.0
ns
35
V
Physical Dimensions ( DO-35 )
© 2009 Fairchild Semiconductor Corporation
1N4154 Rev. B0
www.fairchildsemi.com
2
1N4154 — High Conductance Fast Diode
Electrical Characteristics
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I41
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com