NTE NTE5440

NTE5440
Silicon Controlled Rectifier (SCR)
800V, 10A, Isolated Tab
Applications:
D Temperature Control
D Motor Control
D Transformerless Power Supply Regulators
D Relay and Coil Pulsing
D Power Supply Crowbar Protection
Absolute Maximum Ratings:
Anode to Cathode
Non–Repetitive Peak Voltages (t ≤ 10ms, Note 1), VDSM, VRSM . . . . . . . . . . . . . . . . . . . . . . 800V
Repetitive Peak Voltages (δ ≤ 0.01), VDRM, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Peak Working Voltages, VDWM, VRWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Continuous Voltages, VD, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Average On–State Current, IT(AV)
(Averaged over any 20ms period) up to Th = +74°C . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.7A
RMS On–State Current, IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9A
Repetitive Peak On–State Current, ITRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65A
Non–Repetitive Peak On–State Current, ITSM
(t = 10ms, Half–Sinewave, TJ = +110°C prior to surge, with Reapplied VRWMmax) . 100A
2
I t for Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A2s
Rate of Rise of On–State Current after Triggering, dIT/dt
(IG = 50mA to IT = 20A, dIG/dt = 50mA/µs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/µs
Gate to Cathode
Reverse Peak Voltage, VRGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Average Power Dissipation (Averaged over any 20ms period), PG(AV) . . . . . . . . . . . . . . . 500mW
Peak Power Dissipation, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Temperatures
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +110°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C
Maximum Lead Temperature (During Soldering, less than 5sec) . . . . . . . . . . . . . . . . . . . . +275°C
Note 1. Although not recommended, higher Off–State voltages may be applied without damage, but
the thyristor may switch into the On–State. The Rate–of–Rise of On–State current should
not exceed 15A/µs.
Absolute Maximum Ratings (Cont’d):
Isolation:
Minimum From all Three Pins to External Heatsink (Peak), Visol . . . . . . . . . . . . . . . . . . . . . 1000V
Typical Capacitance from Anode to External Heatsink, Cisol . . . . . . . . . . . . . . . . . . . . . . . . . . . 12pf
Thermal Characteristics:
Thermal Resistance from Junction to External Heatsink, Rthj–h
With Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5K/W
Without Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5K/W
Thermal Resistance from Junction–to–Ambient in Free Air, RthJA
(Mounted on a printed circuit board at a = any lead length
and with copper laminate, Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55K/W
Note 2. The quoted values of RthJA should be used only when no leads of other dissipating components run to the same tie–point.
Electrical Characteristics: (TJ = +110°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
IT = 23A, TJ = 25°C, Note 3
–
–
1.75
V
RGK = Open Circuit
–
–
50
V/µs
RGK = 100Ω
–
–
200
V/µs
Anode to Cathode
On–State Voltage
Rate of Rise of Off–State
Voltage that will not
Trigger any Device
VT
dVD/dt
Reverse Current
IR
VR = 400V
–
–
0.5
mA
Off–State Current
ID
VD = 400V
–
–
0.5
mA
Latching Current
IL
TJ = 25°C
–
–
40
mA
Holding Current
IH
TJ = 25°C
–
–
20
mA
VD = 6V, TJ = 25°C
1.5
–
–
V
VD = 6V, TJ = –40°C
2.3
–
–
V
Gate to Cathode
Gate–Trigger Voltage
VGT
Voltage that will not
Trigger any Device
VGD
VD = 800V
–
–
250
mV
Gate–Trigger Current
IGT
VD = 6V, TJ = 25°C
15
–
–
mA
VD = 6V, TJ = –40°C
20
–
–
mA
IGT = 100mA, dIg/dt = 5A/µs,
TJ = 25°C
–
2
–
µs
Switching Characteristice
Gate–Controlled Turn–On Time
(tgt = td + tr) when Switched
from VD = 800V to IT = 40A
tgt
Note 3. Measured under pulse conditions to avoid excessive dissipation.
.402 (10.2) Max
.173 (4.4) Max
.224 (5.7) Max
.114 (2.9) Max
.122 (3.1)
Dia
.295
(7.5)
.165
(4.2)
.669
(17.0)
Max
K
A
G
.531
(13.5)
Min
.100 (2.54)
.059 (1.5) Max
NOTE: Tab is isolated