NTE5440

NTE5440
Silicon Controlled Rectifier (SCR)
800V, 12A, TO220 Isolated Tab
Applications:
D Motor Control
D Overvoltage Crowbar Protection
D Capacitive Discharge Ignition
D Voltage Regulation
D Welding Equipment
D Capacitive Filter Soft−Start (Inrush Current Control)
Absolute Maximum Ratings:
Repetitive Peak Voltages, VDRM, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
RMS On−State Current (Full Sine Wave, TC = +95°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Average On−State Current (TC = +95°C), IT(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Non−Repetitive Surge Peak On−State Current (Full Cycle, TJ Initial = +25°C), ITSM
F = 50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A
F = 60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120A
2
I t Value for Fusing (t p= 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A2s
Critical Rate of Rise of On−State Current (IG = 2 x IGT, tr < 100ns, TJ = +125°C), di/dt . . . 100A/μs
Peak Gate Current (tp = 20μs, TJ = +125°C), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Average Gate Power Dissipation (TJ = +125°C), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Maximum Peak Reverse Gate Voltage, VRGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Isolation Voltage, VISO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2500Vrms
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +150°C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.1°C/W
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Gate−Trigger Current
IGT
VD = 12V, RL = 30Ω
−
−
25
mA
Gate−Trigger Voltage
VGT
VD = 12V, RL = 30Ω
−
−
1.5
V
Voltage that will not
Trigger any Device
VGD
VD = 800V, RL = 3.3kΩ, TJ = +125°C
200
−
−
mV
−
−
40
mA
Holding Current
IH
IT = 500mA, Gate Open
Rev. 9−09
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Latching Current
Symbol
IL
Test Conditions
Min
Typ
Max
Unit
−
−
60
mA
500
−
−
V/μs
IG = 1.2 IGT
Rate of Rise of Off−State
Voltage that will not
Trigger any Device
dv/dt
VD = 67% VDRM, TJ = +125°C, Gate Open
On−State Voltage
VTM
ITM = 32A, tp = 380μs, TJ = +25°C
−
−
1.6
V
Off−State Current
IDRM
VDRM = 800V, TJ = +25°C
−
−
5
μA
Reverse Current
IRRM
VDRM = 800V, TJ = +125°C
−
−
2
mA
.052 (1.32) Max
.190 (4.83)
Max
.408 (10.36)
Max
.108
(2.74)
.153 (3.89)
Dia Max
Isol
.512
(13.0)
Max
.127
(3.23)
Max
.503
(12.78)
Min
.037 (0.94) Max
Cathode
.100 (2.54)
Gate
Anode