DYNEX ACR44U14LE

ACR44U
ACR44U
Fast Turn-off Asymmetric Thyristor
Advance Information
Replaces March 1998 version, DS4222-3.4
DS4222-4.0 January 2000
APPLICATIONS
KEY PARAMETERS
1600V
VDRM
IT(AV)
44A
ITSM
550A
dVdt*
600V/µs
dI/dt
2000A/µs
tq
6.0µs
■ High Frequency Applications
■ Regulated Power Supplies
■ Capacitor Discharge
■ Ultrasonic Generators
■ Induction Heating
*dV/dt Available to 1000V/µs
FEATURES
■ The ACR44U is a glass passivated asymmetric
thyristor which has exceptionally fast turn-off capabilities
combined with good turn-on characteristics.
VOLTAGE RATINGS
Type Number
Repetitive Peak
Off-state Voltage
VDRM
V
Repetitive Peak
Reverse Voltage
VRRM
V
1600
1400
1200
1000
800
2
2
2
2
2
ACR44U 16LE
ACR44U 14LE
ACR44U 12LE
ACR44U 10LE
ACR44U 08LE
Lower voltage grades available.
Outline type code: SO28.
See Package Details for further information.
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
Units
IT(AV)
Mean on-state current
Half wave resistive load, Tcase = 80oC
44
A
IT(RMS)
RMS value
Tcase = 70oC
69
A
Continuous (direct) on-state current
Tcase = 85oC
57
A
IT
1/7
ACR44U
SURGE RATINGS
Symbol
ITSM
I2t
Parameter
Conditions
Surge (non-repetitive) forward current
Max.
Units
550
A
1500
A2s
10ms half sine; Tcase = 125oC
I2t for fusing
THERMAL AND MECHANICAL DATA
Symbol
Conditions
Parameter
Min.
Max.
Units
Rth(j-c)
Thermal resistance - junction to case
d.c.
-
0.35
o
Rth(c-h)
Thermal resistance - case to heatsink
Mounting torque 3.5Nm
with mounting compound
-
0.25
o
Tvj
Virtual junction temperature
On-state (conducting)
-
125
o
Tstg
Storage temperature range
-55
125
o
Mounting torque
3.5
4.0
Nm
Typ.
Max.
Units
-
C/W
C/W
C
C
DYNAMIC CHARACTERISTICS
Tcase = 125˚C unless otherwise stated.
Symbol
Parameter
Maximum on-state voltage
At 100A peak, Tcase = 25oC
-
2.7
V
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125oC
-
20/10
mA
dV/dt
Maximum linear rate of rise of off-state voltage
To VDRM Tj = 125oC, gate open circuit
-
600*
V/µs
dI/dt
Rate of rise of on-state current
From VDRM to 125A. Gate source 15V, 15Ω
tr = 50ns
-
2000
A/µs
VT(TO)
Threshold voltage
-
-
1.5
V
rT
On-state slope resistance
-
-
13.3
mΩ
IL
Latching current
-
120
-
mA
IH
Holding current
-
25
-
mA
td
Delay time
VD = 300V, gate source = 15V, 15Ω
-
250
ns
tq
Turn-off time (with antiparallel diode)
IT = 50A, square wave tp = 50µs, Tj = 120˚C,
dIR/dt = 50A/µs, dV/dt = 600V/µs to VDRM,
gate voltage at turn-off 3.5-4.5V. VR = -1V.
-
6.0
µs
VTM
IRRM/IDRM
* Available to 1000V/µs.
2/7
Conditions
ACR44U
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Conditions
Typ.
Max.
Units
VGT
Gate trigger voltage
VDWM = 12V, RL = 30Ω, Tcase = 25oC
0.9
3.0
V
IGT
Gate trigger current
VDWM = 12V, RL = 30Ω, Tcase = 25oC
60
200
mA
VFGM
Peak forward gate voltage
-
-
40
V
VRGM
Peak reverse gate voltage
-
-
10
V
IFGM
Peak forward gate current
-
-
10
A
PGM
Peak gate power
-
-
40
W
Forward
-
10
W
Reverse
-
6
W
PG(AV)
Average gate power
Average time 10ms max
WAVEFORM OF GATE VOLTAGE AT TURN-OFF
+
IT
0
a) Anode current waveform
+
Va
0
b) Anode voltage waveform
+
Vgt
0
c) Gate voltage waveform
3/7
ACR44U
CURVES
250
Measured under pulse
conditions
Instantaneous on-state current IT - (A)
200
Tj = 25˚C
150
Tj = 125˚C
100
50
0
1.0
2.0
3.0
4.0
Instantaneous on-state voltage VT - (V)
Fig.1 Maximum (limit) on-state characteristics
100
µs
10
s
U
%
it 1
im
er l
Low
0.1
Tj = -40˚C
Tj = 125˚C
Tj = 25˚C
1.0
0.1
0.01
1.0
Gate trigger current IG - (A)
Fig.2 Gate characteristics
4/7
=
tp
m
10
Gate trigger voltage VG - (V)
W
40
im
rl
e
pp
=
tp
10
W
10
9%
it 9
10
ACR44U
40
Conditions: Peak on-state current = 8µs (Half sine wave)
Tcase = 25˚C, Gate current = 0.5A
VT
IT
Initial on-state voltage - (V)
30
10% IT
Time
0
t
Zero time is taken at initial
device current = 10% IT
20
10
0
0
500
1000
1500
2000
2500
3000
Time - (ns)
Fig.3 Typical initial on-state voltage vs time
Peak current IPK - (A)
150
100
7mJ
5mJ
4mJ
50
3mJ
2mJ
1mJ
0
0
10
20
30
Pulse width tp - (µs)
40
50
60
Fig.4 Maximum energy loss per pulse when switching a half sinusoidal pulse from 600V
5/7
ACR44U
10.0
Reverse gate bias -3.5 to -4V
No gate bias
Turn-off time tq - (µs)
8.0
6.0
4.0
2.0
0
200
400
600
800
1000
Commutating dV/dt - (V/µs)
Fig.5 Variation of turn-off time with commutating dV/dt
12.0
Reverse gate bias -3.5 to -4V
No gate bias
Turn-off time tq - (µs)
10.0
8.0
6.0
4.0
2.0
20
40
60
80
100
Case temperature - (˚C)
Fig.6 Variation of turn-off time with case temperature
6/7
120
ACR44U
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Collector Hex. 17.35mm AF max
Cathode Ø4.0
11.5
24
Gate Ø1.53
min
Thread 1/4 in 28 UNF 2A
Nominal weight: 16.5g
Package outline type code: SO28
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
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Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
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SALES OFFICES
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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS4222-4 Issue No. 4.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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