MMBT2369 / PN2369 NPN Switching Transistor • This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. • Sourced from process 21. MMBT2369 PN2369 C E SOT-23 B TO-92 1 Mark: 1J Absolute Maximum Ratings * T a Symbol 1. Emitter 2. Base 3. Collector = 25×C unless otherwise noted Parameter Ratings Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage IC Collector Current ICP **Collector Current (Pulse) TJ, TSTG Operating and Storage Junction Temperature Range - Continuous 4.5 V 200 mA 400 mA -55 ~ 150 °C * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ** Pulse Test: Pulse Width £ 300ms, Duty Cycle £ 2.0% NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Ta = 25°C unless otherwise noted Max. Units PD Symbol Total Device Dissipation Derate above 25°C Parameter 350 2.8 mW mW/°C RθJC Thermal Resistance, Junction to Case 125 °C/W RθJA Thermal Resistance, Junction to Ambient 357 °C/W * Device mounted on FR-4PCB 1.6” ¥ 1.6” ¥ 0.06”. © 2007 Fairchild Semiconductor Corporation MMBT2369 / PN2369 Rev. 1.0.0 www.fairchildsemi.com 1 MMBT2369 / PN2369 — NPN Switching Transistor February 2008 Symbol Ta = 25°C unless otherwise noted Parameter Test Condition Min. Max. Units Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0 15 V V(BR)CES Collector-Emitter Breakdown Voltage IC = 10μA, VBE = 0 40 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10μA, IE = 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10μA, IC = 0 4.5 ICBO Collector Cutoff Current VCB = 20V, IE = 0 VCB = 20V, IE = 0, Ta = 125°C V 0.4 30 μA μA On Characteristics hFE DC Current Gain * IC = 10mA, VCE = 1.0V IC = 100mA, VCE = 2.0V VCE(sat) Collector-Emitter Saturation Voltage * IC = 10mA, IB = 1.0mA VBE(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA 40 20 0.7 120 0.25 V 0.85 V 4.0 pF 5.0 pF Small Signal Characteristics Cobo Output Capacitance VCB = 5.0V, IE = 0, f = 1.0MHz Cibo Input Capacitance VEB = 0.5V, IC = 0, f = 1.0MHz hfe Small -Signal Current Gain IC = 10mA, VCE = 10V, RG = 2.0kΩ, f = 100MHz 5.0 Switching Characteristics ts Storage Time IB1 = IB2 = IC = 10mA 13 ns ton Turn-On Time VCC = 3.0V, IC = 10mA, IB1 = 3.0mA 12 ns toff Turn-Off Time VCC = 3.0V, IC = 10mA, IB1 = 3.0mA, IB2 = 1.5mA 18 ns * Pulse Test: Pulse Width £ 300ms, Duty Cycle £ 2.0% © 2007 Fairchild Semiconductor Corporation MMBT2369 / PN2369 Rev. 1.0.0 www.fairchildsemi.com 2 MMBT2369 / PN2369 — NPN Switching Transistor Electrical Characteristics MMBT2369 / PN2369 — NPN Switching Transistor Package Dimensions ±0.10 ±0.10 2.40 0.40 ±0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 ±0.03 +0.05 0.12 –0.023 0.96~1.14 0.97REF 2.90 ±0.10 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF Dimensions in Millimeters © 2007 Fairchild Semiconductor Corporation MMBT2369 / PN2369 Rev. 1.0.0 www.fairchildsemi.com 3 MMBT2369 / PN2369 — NPN Switching Transistor Package Dimensions (Continued) TO-92 +0.25 4.58 ±0.20 4.58 –0.15 14.47 ±0.40 0.46 ±0.10 1.27TYP [1.27 ±0.20] +0.10 1.27TYP [1.27 ±0.20] 0.38 –0.05 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 ±0.20 (R2.29) Dimensions in Millimeters © 2007 Fairchild Semiconductor Corporation MMBT2369 / PN2369 Rev. 1.0.0 www.fairchildsemi.com 4 The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 2. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I31 © 2007 Fairchild Semiconductor Corporation MMBT2369 / PN2369 Rev. 1.0.0 www.fairchildsemi.com 5 MMBT2369 / PN2369 NPN Switching Transistor TRADEMARKS