2N3859A 2N3859A NPN General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. • Sourced from Process 10. • See PN100 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter Value 60 Units V VCBO VEBO Collector-Base Voltage 60 V Emitter-Base Voltage 6.0 IC Collector Current V 500 mA TJ, TST Operating and Storage Junction Temperature Range -55 ~ +150 °C - Continuous * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25°C unless otherwise noted Symbol Off Characteristics Parameter Test Condition Min. Typ. Max. Units BV(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0mA, IB = 0 60 V BV(BR)CBO Collector-Base Breakdown Voltage IC = 100µA, IE = 0 60 V BV(BR)EBO Emitter-Base Breakdown Voltage IE = 100µA, IC = 0 6.0 ICBO Collector Cut-off Current VCB = 18V, IE = 0 0.5 µA IEBO Emitter Cut-off Current VEB = 4.0V, IC = 0 0.5 µA V On Characteristics * hFE DC Current Gain VCE= 1.0V, IC = 1.0mA VCE= 1.0V, IC = 1.0mA 75 100 200 4 pF 90 250 MHz 150 pS Small Signal Characteristics Cob Current Gain Bandwidth Product VCB = 10V, f = 1.0MHz fT Output Capacitance IC = 2.0mA, VCE = 10V rb’Cc Collector-Base Time Constant VCE = 10V, IC = 2.0mA f = 31.9MHz * Pulse Test: Pulse ≤ 300µs, Duty Cycle ≤ 2.0% Thermal Characteristics TA=25°C unless otherwise noted Symbol PD Parameter Total Device Dissipation Derate above 25°C Max. 625 5.0 Units mW mW/°C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 °C/W ©2002 Fairchild Semiconductor Corporation Rev. B, July 2002 2N3859A Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B, July 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ActiveArray Bottomless CoolFET CROSSVOLT DOME EcoSPARK E2CMOSTM EnSignaTM FACT FACT Quiet Series FASTâ FASTr FRFET GlobalOptoisolator GTO HiSeC I2C Across the board. Around the world. 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Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I