MMBT4356 MMBT4356 PNP General Purpose Amplifier • This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500mA. • Sourced from process 67. • See TN4033A for characteristics. 3 2 SOT-23 Mark: 82 1. Base 2. Emitter 3. Collector 1 Absolute Maximum Ratings * TA=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter Value -80 VCBO Collector-Base Voltage -80 V VEBO Emitter-Base Voltage -5.0 V IC Collector current -800 mA TJ, Tstg Operating and Storate Junction Temperature Range -55 ~ +150 °C - Continuous Units V * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA=25°C unless otherwise noted Symbol PD RθJA Total Device Dissipation Derate above 25°C Parameter Max. 350 2.8 Units mW mW/°C Thermal Resistance, Junction to Ambient 357 °C/W ©2002 Fairchild Semiconductor Corporation Rev. A1, November 2002 Symbol Parameter Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage * Test Condition Min. Typ. Max. Units IC = -10mA, IB = 0 -80 V V(BR)CBO Collector-Base Breakdown Voltage IC = -10µA, IE = 0 -80 V V(BR)EBS Emitter-Base Breakdown Voltage IC = -10µA, IC = 0 -5.0 ICBO Collector Cutoff Current VCB = -50V, IE = 0 VCB = -50V, IE = 0, TA = 75°C ICES Collector Cutoff Current VCB = -50V, IE = 0 -50 nA IEBO Emitter Cutoff Current VEB = -4.0V, IC = 0 -100 µA V -50 -5.0 nA µA On Characteristics hFE DC Current Gain VCE = -10V, IC = -100µA VCE = -10V, IC = -1.0mA VCE = -10V, IC = -10mA VCE = -10V, IC = -100mA VCE = -10V, IC = -500mA 25 40 50 40 30 250 VCE(sat) Collector-Emitter Saturation Voltage IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA -0.15 -0.5 V V VBE(on) Base-Emitter On Voltage IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA -0.9 -1.1 V V Small Signal Characteristics Cob Output Capacitance VCB = -10V, f = 1MHz 30 pF Cib Input Capacitance VBE = -0.5V, f = 1MHz 110 pF hfe Small-Signal Current Gain VCE = -10V, IC = -50mA, f = 100MHz NF Noise Figure VCE = -10V, IC = -100µA RS = 1kΩ, f = 1kHz BW = 1Hz 3.0 dB VCC = -30V, IC = -500mA IB1 = IB2 = -50mA 100 ns 400 ns 1.0 5.0 Switching Characteristics ton Turn-On Time toff Turn-Off Time * Pulse Test: Pulse Width ≤ 300µs, Duty ≤ 2.0% ©2002 Fairchild Semiconductor Corporation Rev. A1, November 2002 MMBT4356 Electrical Characteristics TA=25°C unless otherwise noted MMBT4356 Package Dimensions ±0.10 ±0.10 2.40 0.40 ±0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 ±0.03 +0.05 0.12 –0.023 0.96~1.14 0.97REF 2.90 ±0.10 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A1, November 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1