ONSEMI 2N6043G

PNP - 2N6040, 2N6042,
NPN - 2N6043, 2N6045
2N6043 and 2N6045 are Preferred Devices
Plastic Medium-Power
Complementary Silicon
Transistors
Plastic medium-power complementary silicon transistors are
designed for general-purpose amplifier and low-speed switching
applications.
Features
•High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc
•Collector-Emitter Sustaining Voltage - @ 100 mAdc VCEO(sus) = 60 Vdc (Min) - 2N6040, 2N6043
= 100 Vdc (Min) - 2N6042, 2N6045
•Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc - 2N6043,44
= 2.0 Vdc (Max) @ IC = 3.0 Adc - 2N6042, 2N6045
•Monolithic Construction with Built-In Base-Emitter Shunt Resistors
•Epoxy Meets UL 94 V-0 @ 0.125 in
•ESD Ratings: Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
•Pb-Free Packages are Available*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
http://onsemi.com
DARLINGTON, 8 AMPERES
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 - 100 VOLTS, 75 WATTS
TO-220AB
CASE 221A-09
STYLE 1
MAXIMUM RATINGS (Note 1)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Symbol
Value
Unit
2N6040
2N6043
2N6042
2N6045
VCEO
60
Vdc
2N6040
2N6043
2N6042
2N6045
VCB
Emitter-Base Voltage
100
60
Vdc
100
VEB
5.0
Vdc
IC
8.0
16
Adc
Base Current
IB
120
mAdc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
75
0.60
W
W/°C
Collector Current
Continuous
Peak
Operating and Storage Junction
Temperature Range
TJ, Tstg
°C
–65 to
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
November, 2007 - Rev. 8
MARKING DIAGRAM
1
2N604xG
AYWW
2N604x = Device Code
x = 0, 2, 3, or 5
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb-Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
2N6040/D
PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction-to-Case
Characteristic
qJC
1.67
°C/W
Thermal Resistance, Junction-to-Ambient
qJA
57
°C/W
*ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
60
100
-
-
20
20
-
20
20
200
200
200
-
20
20
-
2.0
1000
1000
100
20.000
20,000
-
-
2.0
2.0
4.0
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
VCEO(sus)
2N6040, 2N6043
2N6042, 2N6045
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
(VCE = 100 Vdc, IB = 0)
2N6040, 2N6043
2N6042, 2N6045
Collector Cutoff Current
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C)
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C)
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C)
2N6040, 2N6043
2N6042, 2N6045
2N6040, 2N6043
2N6041, 2N6044
2N6042, 2N6045
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0)
2N6040, 2N6043
2N6042, 2N6045
Vdc
-
mA
ICEO
mA
ICEX
mA
ICBO
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 4.0 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
(IC = 8.0 Adc, VCE = 4.0 Vdc)
2N6040, 2N6043,
2N6042, 2N6045
All Types
hFE
Collector-Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 16 mAdc)
(IC = 3.0 Adc, IB = 12 mAdc)
(IC = 8.0 Adc, IB = 80 Adc)
2N6040, 2N6043,
2N6042, 2N6045
All Types
-
VCE(sat)
Vdc
Base-Emitter Saturation Voltage (IC = 8.0 Adc, IB = 80 mAdc)
VBE(sat)
-
4.5
Vdc
Base-Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc)
VBE(on)
-
2.8
Vdc
|hfe|
4.0
-
Cob
-
300
200
pF
hfe
300
-
-
DYNAMIC CHARACTERISTICS
Small Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
2N6040/2N6042
2N6043/2N6045
Small-Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
*Indicates JEDEC Registered Data.
http://onsemi.com
2
PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045
PD, POWER DISSIPATION (WATTS)
TA TC
4.0 80
3.0 60
TC
2.0 40
TA
1.0 20
0
0
0
20
40
60
80
100
T, TEMPERATURE (°C)
120
140
160
Figure 1. Power Derating
5.0
RC
SCOPE
TUT
V2
approx
+8.0 V
RB
51
0
V1
approx
-12 V
D1
≈ 8.0 k ≈120
+4.0 V
25 ms
for td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit reverse all polarities and D1.
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
ts
2.0
t, TIME (s)
μ
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
3.0
VCC
-30 V
0.7
0.5
0.3
0.2 VCC = 30 V
IC/IB = 250
IB1 = IB2
0.1 TJ = 25°C
PNP
0.07
td @ VBE(off) = 0 V
NPN
0.05
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
r(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
Figure 2. Switching Times Equivalent Circuit
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.02
0.05
0.02
SINGLE PULSE
0.01
0.01
0.02 0.03
0.01
0.05
5.0 7.0
10
P(pk)
qJC(t) = r(t) qJC
qJC = 1.67°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
READ TIME AT t1
t2
TJ(pk) - TC = P(pk) qJC(t)
DUTY CYCLE, D = t1/t2
0.1
0.03
tr
Figure 3. Switching Times
0.2
0.1
0.07
0.05
tf
1.0
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
t, TIME OR PULSE WIDTH (ms)
Figure 4. Thermal Response
http://onsemi.com
3
20
30
50
100
200 300
500
1000
PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045
20
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC - VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
< 150°C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
100 ms
IC, COLLECTOR CURRENT (AMP)
10
5.0
500 ms
1.0ms
5.0ms
2.0
dc
TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
2N6040, 2N6043
2N6045
1.0
0.5
0.2
0.1
0.05
0.02
1.0
20 30
2.0 3.0
50
5.0 7.0 10
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
70 100
Figure 5. Active-Region Safe Operating Area
300
TJ = 25°C
5000
3000
2000
200
C, CAPACITANCE (pF)
hfe, SMALL-SIGNAL CURRENT GAIN
10,000
1000
500
300
200
TC = 25°C
VCE = 4.0 Vdc
IC = 3.0 Adc
100
50
30
20
2.0
5.0
Cib
70
50
PNP
NPN
10
1.0
Cob
100
PNP
NPN
10
20
50 100
f, FREQUENCY (kHz)
200
100
30
0.1
500 1000
0.2
0.5
1.0 2.0
5.0 10
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
Figure 6. Small-Signal Current Gain
PNP
2N6040, 2N6042
NPN
2N6043, 2N6045
20,000
20,000
1000
700
500
300
200
0.1
10,000
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
3000
2000
VCE = 4.0 V
VCE = 4.0 V
10,000
7000
5000
50
TJ = 150°C
25°C
-55°C
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0
7000
5000
TJ = 150°C
3000
2000
25°C
1000
700
500
-55°C
300
200
0.1
10
0.2
0.3
0.5 0.7
1.0
2.0
3.0
IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
http://onsemi.com
4
5.0 7.0 10
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045
3.0
TJ = 25°C
2.6
IC = 2.0 A
6.0 A
4.0 A
2.2
1.8
1.4
1.0
0.3
0.5 0.7 1.0
5.0 7.0 10
2.0 3.0
IB, BASE CURRENT (mA)
20
30
3.0
TJ = 25°C
2.6
IC = 2.0 A
6.0 A
4.0 A
2.2
1.8
1.4
1.0
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
IB, BASE CURRENT (mA)
10
20
30
7.0
10
Figure 9. Collector Saturation Region
3.0
3.0
TJ = 25°C
TJ = 25°C
2.5
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
2.5
2.0
1.5
VBE @ VCE = 4.0 V
VBE(sat) @ IC/IB = 250
1.0
2.0
VBE(sat) @ IC/IB = 250
1.5
VBE @ VCE = 4.0 V
1.0
VCE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
0.5
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0
0.5
7.010
0.1
0.2 0.3
IC, COLLECTOR CURRENT (AMP)
0.5 0.7
1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
ORDERING INFORMATION
Device
Package
2N6040
TO-220AB
2N6040G
TO-220AB
(Pb-Free)
2N6042
TO-220AB
2N6042G
TO-220AB
(Pb-Free)
2N6043
TO-220AB
2N6043G
TO-220AB
(Pb-Free)
2N6045
TO-220AB
2N6045G
TO-220AB
(Pb-Free)
Shipping
50 Units / Rail
http://onsemi.com
5
5.0
PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045
PACKAGE DIMENSIONS
TO-220
CASE 221A-09
ISSUE AE
-TB
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
G
D
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.161
0.095
0.105
0.110
0.155
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
4.09
2.42
2.66
2.80
3.93
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
N
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800-282-9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81-3-5773-3850
http://onsemi.com
6
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
2N6040/D