ONSEMI MJF31CG

MJF31C (NPN),
MJF32C (PNP)
Preferred Device
Complementary Silicon
Plastic Power Transistors
for Isolated Package
Applications
http://onsemi.com
Designed for use in general purpose amplifier and switching
applications.
Features
• Collector−Emitter Saturation Voltage −
•
•
•
•
3.0 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
100 VOLTS, 28 WATTS
VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc
Collector−Emitter Sustaining Voltage −
VCEO(sus) = 100 Vdc (Min)
High Current Gain − Bandwidth Product
fT = 3.0 MHz (Min) @ IC = 500 mAdc
UL Recognized, File #E69369, to 3500 VRMS Isolation
Pb−Free Packages are Available*
4
TO−220 FULLPAK
CASE 221D
STYLE 2
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1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
100
Vdc
Collector−Base Voltage
VCB
100
Vdc
Emitter−Base Voltage
VEB
5.0
Vdc
Collector−Emitter Voltage
Collector CurrentUnclamped Inductive
Load Energy (Note 1)
− Continuous
− Peak
IC
Base Current
IB
1.0
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25_C
PD
28
0.22
W
W/_C
Total Power Dissipation @ TA = 25_C
Derate above 25_C
PD
2.0
0.016
W
W/_C
Unclamped Inductive Load Energy (Note 1)
E
32
mJ
–65 to +150
_C
MARKING DIAGRAM
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJC
62.5
°C/W
Thermal Resistance, Junction−to−Case
RqJC
4.46
°C/W
MJF3xCG
AYWW
x
G
A
Y
WW
THERMAL CHARACTERISTICS
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2008
July, 2008 − Rev. 5
3
Adc
3.0
5.0
TJ, Tstg
Operating and Storage Junction
Temperature Range
2
1
= 1 or 2
= Pb−Free Package
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MJF31C
TO−220 FULLPAK
50 Units/Rail
MJF31CG
TO−220 FULLPAK
(Pb−Free)
50 Units/Rail
MJF32C
TO−220 FULLPAK
50 Units/Rail
MJF32CG
TO−220 FULLPAK
(Pb−Free)
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MJF31C/D
MJF31C (NPN), MJF32C (PNP)
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
100
−
−
0.3
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 30 mAdc, IB = 0)
VCEO(sus)
Vdc
Collector Cutoff Current
(IC = 3.0 Adc, VCE = 4.0 Vdc)
ICEO
mAdc
Collector Cutoff Current
ICES
−
200
mAdc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
−
1.0
mAdc
hFE
25
10
−
50
−
Collector−Emitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc)
VCE(sat)
−
1.2
Vdc
Base−Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc)
VBE(on)
−
1.8
Vdc
Current−Gain − Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT
3.0
−
MHz
Small−Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
20
−
−
ON CHARACTERISTICS (Note 2)
DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
DYNAMIC CHARACTERISTICS
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
P D, POWER DISSIPATION (WATTS)
TC TA
40 4.0
30 3.0
TC
20 2.0
TA
10 1.0
0
0
0
20
40
60
100
120
80
T, TEMPERATURE (°C)
140
160
Figure 1. Power Derating
TURN-ON PULSE
APPROX
+11 V
VCC
2.0
RC
IC/IB = 10
TJ = 25°C
1.0
VEB(off)
SCOPE
Vin
Vin 0
0.7
0.5
RB
t3
APPROX
+11 V
Cjd << Ceb
t1 ≤ 7.0 ns
100 < t2 < 500 ms
t3 < 15 ns
Vin
t2
TURN-OFF PULSE
t, TIME (s)
μ
t1
-4.0 V
0.3
tr @ VCC = 30 V
tr @ VCC = 10 V
0.1
0.07
0.05
0.03
0.02
0.03
DUTY CYCLE ≈ 2.0%
APPROX -9.0 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
Figure 2. Switching Time Equivalent Circuit
td @ VEB(off) = 2.0 V
0.05 0.07 0.1
0.3
0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
Figure 3. Turn−On Time
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2
3.0
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
MJF31C (NPN), MJF32C (PNP)
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
ZqJC(t) = r(t) RqJC
RqJC(t) = 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
0.05
0.02
0.03
0.02
0.01
0.01
0.01
SINGLE PULSE
0.02
0.05
1.0
0.2
0.5
1.0
2.0
5.0
t, TIME (ms)
10
20
50
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
100
200
500
1.0 k
Figure 4. Thermal Response
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T J(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
v 150_C. T J(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
IC, COLLECTOR CURRENT (AMP)
10
5.0
100ms
5.0ms
2.0
1.0
0.5
0.2
SECONDARY BREAKDOWN
LIMITED @ TJ ≤ 150°C
THERMAL LIMIT @ TC = 25°C
(SINGLE PULSE)
BONDING WIRE LIMIT
MJF31C,
CURVES APPLY
MJF32C
BELOW RATED V
1.0ms
CEO
0.1
5.0
10
20
50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
100
Figure 5. Active Region Safe Operating Area
300
ts′
t, TIME (s)
μ
1.0
tf @ VCC = 30 V
0.7
0.5
0.3
0.2
IB1 = IB2
IC/IB = 10
ts′ = ts - 1/8 tf
TJ = 25°C
TJ = +25°C
200
CAPACITANCE (pF)
3.0
2.0
tf @ VCC = 10 V
0.1
0.07
0.05
0.03
0.03
100
Ceb
70
50
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
2.0
30
0.1
3.0
Figure 6. Turn−Off Time
Ccb
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
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3
20 30 40
MJF31C (NPN), MJF32C (PNP)
hFE, DC CURRENT GAIN
300
100
70
50
TJ = 150°C
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
500
VCE = 2.0 V
25°C
-55°C
30
10
7.0
5.0
0.5 0.7 1.0
0.03 0.05 0.07 0.1
0.3
IC, COLLECTOR CURRENT (AMP)
3.0
2.0
TJ = 25°C
1.6
IC = 0.3 A
1.2
0.4
0
1.0
θV, TEMPERATURE COEFFICIENTS (mV/ °C)
VBE @ VCE = 2.0 V
0.4
VCE(sat) @ IC/IB = 10
0
0.003 0.005 0.01 0.02 0.03 0.05
0.1
0.2 0.3 0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (A)
μ
100
10-1
10-2
200
500 1000
*APPLIES FOR IC/IB ≤ hFE/2
TJ = -65°C TO +150°C
+2.0
+1.5
+1.0
+0.5
*qVC FOR VCE(sat)
0
-0.5
-1.0
qVB FOR VBE
-1.5
-2.0
-2.5
0.003 0.005 0.01 0.02
0.05
0.1
0.2 0.3 0.5
1.0
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
103
101
10
20
50
100
IB, BASE CURRENT (mA)
IC, COLLECTOR CURRENT (AMPS)
R BE , EXTERNAL BASE-EMITTER RESISTANCE (OHM
V, VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 10
0.6
102
5.0
+2.5
TJ = 25°C
1.0
0.2
2.0
Figure 9. Collector Saturation Region
1.4
0.8
3.0 A
0.8
Figure 8. DC Current Gain
1.2
1.0 A
VCE = 30 V
TJ = 150°C
100°C
REVERSE
FORWARD
25°C
10-3
-0.4 -0.3 -0.2 -0.1
ICES
0
+0.1 +0.2 +0.3 +0.4 +0.5 +0.6
2.0 3.0
107
VCE = 30 V
IC = 10 x ICES
106
IC ≈ ICES
105
104
IC = 2 x ICES
103
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
102
20
40
60
80
100
120
140
160
VBE, BASE-EMITTER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Collector Cut−Off Region
Figure 13. Effects of Base−Emitter Resistance
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4
MJF31C (NPN), MJF32C (PNP)
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE J
−T−
−B−
F
SEATING
PLANE
C
S
Q
U
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
A
1 2 3
H
−Y−
K
G
N
L
D
J
R
3 PL
0.25 (0.010)
M
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
INCHES
MIN
MAX
0.617
0.635
0.392
0.419
0.177
0.193
0.024
0.039
0.116
0.129
0.100 BSC
0.118
0.135
0.018
0.025
0.503
0.541
0.048
0.058
0.200 BSC
0.122
0.138
0.099
0.117
0.092
0.113
0.239
0.271
MILLIMETERS
MIN
MAX
15.67
16.12
9.96
10.63
4.50
4.90
0.60
1.00
2.95
3.28
2.54 BSC
3.00
3.43
0.45
0.63
12.78
13.73
1.23
1.47
5.08 BSC
3.10
3.50
2.51
2.96
2.34
2.87
6.06
6.88
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
Y
ON Semiconductor and
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MJF31C/D