MMBTA05LT1G, MMBTA06LT1G Driver Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant 1 BASE MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage MMBTA05LT1 MMBTA06LT1 VCEO Collector −Base Voltage VCBO MMBTA05LT1 MMBTA06LT1 Emitter −Base Voltage Value Unit 60 80 3 Vdc 60 80 1 VEBO 4.0 Vdc IC 500 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C Collector Current − Continuous 2 EMITTER Vdc 2 SOT−23 CASE 318 STYLE 6 THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. © Semiconductor Components Industries, LLC, 2010 October, 2010 − Rev. 5 1 MARKING DIAGRAMS 1H M G G 1GM M G G MMBTA05LT1 MMBTA06LT1 1H, 1GM = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Publication Order Number: MMBTA05LT1/D MMBTA05LT1G, MMBTA06LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max Unit 60 80 − − V(BR)EBO 4.0 − Vdc ICES − 0.1 mAdc − − 0.1 0.1 100 100 − − OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) MMBTA05 MMBTA06 Emitter −Base Breakdown Voltage (IE = 100 mAdc, IC = 0) V(BR)CEO Collector Cutoff Current (VCE = 60 Vdc, IB = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Vdc ICBO MMBTA05 MMBTA06 mAdc ON CHARACTERISTICS hFE DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) − Collector −Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) VCE(sat) − 0.25 Vdc Base −Emitter On Voltage (IC = 100 mAdc, VCE = 1.0 Vdc) VBE(on) − 1.2 Vdc fT 100 − MHz SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (Note 4) (IC = 10 mA, VCE = 2.0 V, f = 100 MHz) 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity. TURN-ON TIME TURN-OFF TIME VCC -1.0 V VCC +VBB +40 V 5.0 ms 100 +40 V RL 100 OUTPUT +10 V 0 tr = 3.0 ns OUTPUT RB Vin RB Vin * CS t 6.0 pF 5.0 mF RL * CS t 6.0 pF 5.0 mF 100 100 5.0 ms tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits http://onsemi.com 2 300 80 40 C, CAPACITANCE (pF) 200 100 70 Cibo 20 10 8.0 50 Cobo 6.0 30 2.0 3.0 5.0 7.0 10 20 30 50 70 100 4.0 0.1 200 1.0 2.0 5.0 10 50 20 Figure 2. Current−Gain — Bandwidth Product Figure 3. Capacitance 100 400 TJ = 125°C VCE = 1.0 V ts 200 100 70 50 tf VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25°C 30 20 tr 200 25°C -55°C 100 5.0 7.0 10 20 30 50 70 100 200 300 60 40 0.5 500 1.0 2.0 3.0 5.0 10 20 30 50 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 4. Switching Time Figure 5. DC Current Gain 200 300 500 1.1 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) IC/IB = 10 150°C 25°C 0.1 0.01 80 td @ VBE(off) = 0.5 V 1 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.5 VR, REVERSE VOLTAGE (VOLTS) 300 10 0.2 IC, COLLECTOR CURRENT (mA) 1.0 k 700 500 t, TIME (ns) TJ = 25°C 60 VCE = 2.0 V TJ = 25°C h FE , DC CURRENT GAIN f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) MMBTA05LT1G, MMBTA06LT1G 0.001 0.01 −55°C 0.1 0.9 0.8 −55°C 0.7 25°C 0.6 0.5 0.4 150°C 0.3 0.2 1 IC/IB = 10 1.0 0.0001 IC, COLLECTOR CURRENT (A) 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 6. Collector Emitter Saturation Voltage vs. Collector Current Figure 7. Base Emitter Saturation Voltage vs. Collector Current http://onsemi.com 3 1 MMBTA05LT1G, MMBTA06LT1G VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VBE(on), BASE−EMITTER VOLTAGE (V) 1.2 VCE = 1 V 1.1 1.0 0.9 −55°C 0.8 25°C 0.7 0.6 0.5 150°C 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 1 TJ = 25°C 0.8 IC = 250 mA IC = 100 mA IC = 50 mA IC = 500 mA 0.6 0.4 IC = 10 mA 0.2 0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (mA) Figure 8. Base Emitter Voltage vs. Collector Current Figure 9. Collector Saturation Region 50 1 IC, COLLECTOR CURRENT (A) R qVB , TEMPERATURE COEFFICIENT (mV/ °C) -0.8 -1.2 -1.6 RqVB for VBE -2.0 -2.4 -2.8 0.5 1.0 1S 100 mS 2.0 5.0 10 20 50 100 200 500 10 mS 0.1 Thermal Limit 0.01 0.001 1.0 1 mS 0.1 1 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (mA) Figure 11. Safe Operating Area Figure 10. Base−Emitter Temperature Coefficient ORDERING INFORMATION Package Shipping† MMBTA05LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel MMBTA05LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel MMBTA06LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel MMBTA06LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 MMBTA05LT1G, MMBTA06LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 DIM A A1 b c D E e L L1 HE 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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