MMBV3401LT1G Silicon Pin Diode This device is designed primarily for VHF band switching applications but is also suitable for use in general−purpose switching circuits. Supplied in a Surface Mount package. Features http://onsemi.com • Rugged PIN Structure Coupled with Wirebond Construction for Optimum Reliability • Low Capacitance − 0.7 pF (Typ) at VR = 20 Vdc • Very Low Series Resistance at 100 MHz 3 Cathode 1 Anode 0.34 W (Typ) @ IF = 10 mAdc • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 3 SOT−23 (TO−236AB) CASE 318−08 STYLE 8 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 35 Vdc Forward Power Dissipation @ TA = 25°C Derate above 25°C PD Junction Temperature TJ +125 °C Tstg −55 to +150 °C Storage Temperature Range 200 2.0 MARKING DIAGRAM mW mW/°C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 4D M G G 1 4D = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† MMBV3401LT1G SOT−23 (Pb−Free) 3000 Tape & Reel MMBV3401LT3G SOT−23 10,000 Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 6 1 Publication Order Number: MMBV3401LT1/D MMBV3401LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)R 35 − − Vdc Diode Capacitance (VR = 20 Vdc) CT − − 1.0 pF Series Resistance (Figure 1) (IF = 10 mAdc, f = 100 MHz) RS − − 0.7 W Reverse Leakage Current (VR = 25 Vdc) IR − − 0.1 mAdc Characteristic Reverse Breakdown Voltage (IR = 10 mAdc) TYPICAL CHARACTERISTICS 50 1.4 I F , FORWARD CURRENT (mA) R S , SERIES RESISTANCE (OHMS) 1.6 1.2 TA = 25°C 1.0 0.8 0.6 0.4 40 30 TA = 25°C 20 10 0.2 0 0.5 0 0 2.0 4.0 6.0 8.0 10 12 14 16 0.7 0.9 1.0 +100 +140 0.8 IF, FORWARD CURRENT (mA) VF, FORWARD VOLTAGE (VOLTS) Figure 1. Series Resistance Figure 2. Forward Voltage 20 100 40 10 7.0 5.0 I R , REVERSE CURRENT (μ A) C T , DIODE CAPACITANCE (pF) 0.6 TA = 25°C 2.0 1.0 0.7 0.5 10 4.0 VR = 25 Vdc 1.0 0.4 0.1 0.04 0.01 0.004 0.2 +3.0 0 -3.0 -6.0 -9.0 -12 -15 -18 -21 -24 0.001 -60 -27 VR, REVERSE VOLTAGE (VOLTS) -20 0 +20 +60 TA, AMBIENT TEMPERATURE (°C) Figure 3. Diode Capacitance Figure 4. Leakage Current http://onsemi.com 2 MMBV3401LT1G PACKAGE DIMENSIONS SOT−23 (TO−236AB) CASE 318−08 ISSUE AN D SEE VIEW C 3 HE E c 1 2 e b 0.25 q A L A1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A 0.89 1.00 1.11 0.035 0.040 0.044 A1 0.01 0.06 0.10 0.001 0.002 0.004 b 0.37 0.44 0.50 0.015 0.018 0.020 c 0.09 0.13 0.18 0.003 0.005 0.007 D 2.80 2.90 3.04 0.110 0.114 0.120 E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.081 L 0.10 0.20 0.30 0.004 0.008 0.012 0.35 0.54 0.69 0.014 0.021 0.029 L1 HE 2.10 2.40 2.64 0.083 0.094 0.104 STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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