1SS400T1 Preferred Device High−Speed Switching Diode Features • • • • • High−Speed Switching Applications Lead Finish: 100% Matte Sn (Tin) Qualified Maximum Reflow Temperature: 260°C Extremely Small SOD−523 Package This is a Pb−Free Device http://onsemi.com 1 CATHODE 2 ANODE MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Reverse Voltage VR 100 V Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit 200 1.57 mW mW/°C RJA 635 °C/W TJ, Tstg 150 °C Peak Forward Surge Current 1 SOD−523 CASE 502 PLASTIC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board (Note 1) @TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature PD MARKING DIAGRAM AMG G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ Minimum Pad. ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Max Unit − 0.1 Adc − 3.0 pF OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 80 Vdc) IR Diode Capacitance (VR = 0 V, f = 1.0 MHz) CD Forward Voltage (IF = 100 mAdc) VF Reverse Recovery Time (IF = IR = 10 mAdc) trr 1 A = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device − 1.2 Vdc − 4.0 ns Package Shipping† 1SS400T1 SOD−523* 3000/Tape & Reel 1SS400T1G SOD−523* 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *This package is inherently Pb−Free. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 December, 2006 − Rev. 4 1 Publication Order Number: 1SS400T1/D 1SS400T1 820 +10 V 2.0 k IF 100 H tp tr 0.1 F IF t trr 10% t 0.1 F 90% DUT 50 INPUT SAMPLING OSCILLOSCOPE 50 OUTPUT PULSE GENERATOR IR VR INPUT SIGNAL iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit TA = 85°C I R , REVERSE CURRENT ( A) 10 TA = −40°C 10 TA = 25°C 1.0 0.1 0.2 0.4 0.6 0.8 1.0 TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 0.001 1.2 TA = 150°C TA = 25°C 10 0 20 30 VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 C D , DIODE CAPACITANCE (pF) I F, FORWARD CURRENT (mA) 100 0.64 0.60 0.56 0.52 0 2.0 4.0 6.0 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 2 8.0 40 50 1SS400T1 PACKAGE DIMENSIONS SOD−523 CASE 502−01 ISSUE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. −X− A −Y− B 1 2 DIM A B C D J K S D 2 PL 0.08 (0.003) M T X Y MILLIMETERS MIN NOM MAX 1.10 1.20 1.30 0.70 0.80 0.90 0.50 0.60 0.70 0.25 0.30 0.35 0.07 0.14 0.20 0.15 0.20 0.25 1.50 1.60 1.70 MIN 0.043 0.028 0.020 0.010 0.0028 0.006 0.059 INCHES NOM MAX 0.047 0.051 0.032 0.035 0.024 0.028 0.012 0.014 0.0055 0.0079 0.008 0.010 0.063 0.067 C −T− K J SEATING PLANE S SOLDERING FOOTPRINT* 1.40 0.0547 0.40 0.0157 0.40 0.0157 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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