PJSD05TS SERIES 120W, LOW CLAMPING VOLTAGE TVS FOR PROTECTION IN PORTABLE ELECTRONICS PRELIMINARY This tiny but powerful TVS/Zener Seires has been designed to Protect Sensitive Equipment against ESD and to prevent Latch-Up events in very sensitive CMOS circuitry operating at 5V, 12V, 15V and 24Vdc .These devices come in the standard SOD523 package making them suitable for Portable/Computing Electronics, where the board space is a premium. SPECIFICATION FEATURES 120W Power Dissipation (8/20µs Waveform) Very Low Leakage Current, Maximum of 5µA @ VRWM IEC61000-4-2 ESD 15kV air, 8kV Contact Compliance K SOD523 Package A APPLICATIONS MP3 Players SOD123 SOD523 Digital Cameras GPS Mobile Phones and Accessories Notebook PC's MAXIMUM RATINGS Symbol Value Units Peak Pulse Power (8/20µs Waveform) P pp 120 W ESD Voltage (HBM) V ESD 25 kV Operating Temperature Range TJ -50 to +150 °C Storage Temperature Range Tstg -50 to +150 °C Typical Max Units 5 V Rating ELECTRICAL CHARACTERISTICS Tj = 25°C PJSD05TS Parameter Reverse Stand-Off Voltage Conditions Symbol Min V RWM Reverse Breakdown Voltage VBR I BR = 1mA Reverse Leakage Current IR VR = 5V 5 µA Clamping Voltage (8/20µs) Vc I pp = 5A 9.0 V Off State Junction Capacitance Cj 0 Vdc Bias f = 1MHz 190 pF Off State Junction Capacitance Cj 5 Vdc Bias f = 1MHz 105 pF 9/12/2005 Page 1 6 V www.panjit.com PJSD05TS SERIES ELECTRICAL CHARACTERISTICS Tj = 25°C PJSD12TS Parameter Reverse Stand-Off Voltage Conditions Symbol Min Typical V RWM Reverse Breakdown Voltage VBR I BR = 1mA Reverse Leakage Current IR VR = 12V Clamping Voltage (8/20µs) Vc Off State Junction Capacitance Cj Max Units 12 V 13.3 V I pp = 5A 0 Vdc Bias f = 1MHz 5 µA 17 V 90 pF PJSD15TS Parameter Reverse Stand-Off Voltage Conditions Symbol Min Typical V RWM Reverse Breakdown Voltage VBR I BR = 1mA Reverse Leakage Current IR VR = 15V Clamping Voltage (8/20µs) Vc Off State Junction Capacitance Cj Max Units 15 V 16.7 V I pp = 5A 0 Vdc Bias f = 1MHz 5 µA 22 V 70 pF Max Units 24 V PJSD24TS Parameter Reverse Stand-Off Voltage Conditions Symbol V RWM Reverse Breakdown Voltage VBR I BR = 1mA Reverse Leakage Current IR VR = 24V Clamping Voltage (8/20µs) Vc Off State Junction Capacitance Cj 9/12/2005 Min I pp = 3A 0 Vdc Bias f = 1MHz Page Typical 26.7 V µA 32 V 50 pF www.panjit.com PJSD05TS SERIES PACKAGE DIMENSIONS AND BOND PAD LAYOUT PRELIMINARY 9/12/2005 Page 3 www.panjit.com